NTE889M
Integrated Circuit
Dual, Low Power, JFET OP Amplifier
Description:
The NTE889M is a JFETinput operational amplifier in an 8Lead DIP type package designed for low
power applications and features high input impedance, low input bias current, and low input offset
current. Advanced design techniques allow for higher slew rates, gain bandwidth products, and out-
put swing.
Features:
D
Low Supply Current: 200
A/Amplifier
D
Low Input Bias Current: 5pA
D
High Gain Bandwidth: 2MHz
D
High Slew rate: 6V/
s
D
High Input Impedance: 10
12
D
Large Output Voltage Swing:
14V
D
Output Short Circuit Protection
Absolute Maximum Ratings:
Supply Voltage (From V
CC
to V
EE
), V
S
+36V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Differential Input Voltage (Note 1), V
IDR
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage Range (Note 1, Note 2), V
IR
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output ShortCircuit Duration (Note 3), t
s
Indefinite Seconds
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature (Note 3), T
J
0
to +70
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature range, T
stg
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature Range, T
stg
60
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Differential voltages are at the noninverting input terminal with respect to the inverting input
terminal.
Note 2. The magnitude of the input voltage must never exceed the magnitude of the supply voltage
or 15V, whchever is less.
Note 3. Power dissipation must be considered to ensure maximun junction temperature (T
J
) is not
exceeded.
DC Electrical Characteristics: (V
CC
= +15V, V
EE
= 15V unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Offset Voltage
V
IO
V
O
= 0,
T
A
= +25
C
3
15
mV
R
S
= 50
T
A
= 0
to +70
C
20
mV
Temperature Coefficient of
Input Offset Voltage
a
VIO
V
O
= 0, R
S
= 50
, T
A
= 0
to +70
C
10
V/
C
Input Offset Current
I
IO
V
CM
= 0, V
O
= 0
T
A
= +25
C
5
200
pA
T
A
= 0
to +70
C
5
nA
Input Bias Current
I
IB
V
CM
= 0, V
O
= 0
T
A
= +25
C
30
200
pA
T
A
= 0
to +70
C
10
nA
CommonMode Input Voltage Range
V
ICR
T
A
= +25
C
+14.5
+11
V
T
A
= 0
to +70
C
11
12
V
Maximim Peak Output Voltage Swing
V
OM
R
L
= 10k
, T
A
= +25
C
10.0
14
V
R
L
= 10k
, T
A
= 0
to +70
C
10.0
V
LargeSignal Differential Voltage
A
VD
V
O
=
10V,
T
A
= +25
C
3
58
V/mV
Amplification
R
L
10k
T
A
= 0
to +70
C
3
V/mV
Gain Bandwidth Product
GBW
f = 200kHz
2
MHz
Input Resistance
r
i
T
A
= +25
C
10
12
CommonMode Rejection Ratio
CMRR
V
CM
= V
ICR
min, V
O
= 0, R
S
= 50
,
T
A
= +25
C
70
84
dB
Supply Volatge Rejection Ratio
PSRR
V
CM
= 0, V
O
= 0, R
S
= 50
,
T
A
= +25
C
70
86
dB
Total Power Dissipation (Each Amp)
P
D
No Load, V
O
= 0, T
A
= +25
C
6.0
7.5
mW
Power Supply Current (Each Amp)
I
D
No Load, V
O
= 0, T
A
= +25
C
200
250
A
Channel Separation
CS
f = 10kHz
120
dB
Slew Rate
SR
V
in
= 10V to +10V, R
L
= 10k
,
C
L
= 100pF, A
V
= +1.0
2
6
V/
s
Rise Time
t
r
V
in
= 20mV, R
L
= 10k
,
0.1
s
Overshoot
OS
C
L
= 100pF, A
V
= +1.0
10
%
Setting Time
t
S
V
CC
= +15V,
V
EE
= 15V,
A
V
= 1.0,
to within 10mV
1.6
s
A
V
= 1.0,
R
L
= 10k
,
V
O
= 0 to 10V
step
to within 1.0mV
2.2
s
Equivalent Input Noise
e
n
R
S
= 100
, f = 1kHz
47
nV/ Hz
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