NTE909 & NTE909D
Integrated Circuits
Operational Amplifier
Description:
These devices are monolithic operational amplifiers intended for generalpurpose applications. Op-
eration is completely specified over the range of voltages commonly used for these devices. The de-
sign, in addition to providing high gain, minimizes both offset voltages and bias currents. Further, the
classB output stage gives a large output capability with minimum power drain.
External components are used to frequency compensate the amplifier. Although the unitygain com-
pensation network specified will make the amplifiers unconditionally stable in all feedback configura-
tions, compensation can be tailored to optimize highfrequency performance for any gain setting.
The fact that the amplifiers are built on a single silicon chip provides low offset and temperature drift
at minimum cost. It also ensures negligble drift due to temperature gradients in the vicinity of the am-
plifier.
Absolute Maximum Ratings:
Supply Voltage
18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Note 1)
250mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential Input Voltage
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output ShortCircuit Duration (T
A
= +25
C)
5 seconds
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range
0
to +70
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (Soldering, 10 seconds)
+300
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1 For operating at elevated temperatures, the device must be derated based on a 100
C maxi-
mum junction temperature and a thermal resistance 150
C/W junction to ambient or 45
C/W,
junction to case for the metal can package.
Electrical Characteristics: (0
C
T
A
=
+70
C,
9V
V
S
15V, C1 = 5000pF, R1 = 1.5k,
C2 = 200pF and R2 = 51
unless otherwise specified)
Parameter
Test Conditions
Min
Typ
Max
Unit
Input Offset Voltage
T
A
= +25
C, R
S
10k
2.0
7.5
mV
Input Bias Current
T
A
= +25
C
300
1500
nA
T
A
= T
MIN
0.36
2.0
A
Input Offset Current
T
A
= +25
C
100
500
nA
T
A
= T
MIN
75
400
nA
T
A
= T
MAX
125
750
nA
Electrical Characteristics (Cont'd): (0
C
T
A
=
+70
C,
9V
V
S
15V, C1 = 5000pF,
R1 = 1.5k, C2 = 200pF and R2 = 51
unless otherwise
specified)
Parameter
Test Conditions
Min
Typ
Max
Unit
Input Resistance
T
A
= +25
C
50
250
k
T
A
= T
MIN
50
250
k
Output Resistance
T
A
= +25
C
150
Supply Current
T
A
= +25
C, V
S
=
15V
2.6
6.6
mA
Transient Response Risetime
V
IN
= 20mV, C
L
100pF, T
A
= +25
C
0.3
1.0
s
Transient Response Overshoot
10
30
%
Slew Rate
T
A
= +25
C
0.25
V/
s
Average Temperature Coefficient
R
S
= 50
, T
A
= +25
C to T
MAX
6.0
V/
C
of Input Offset Voltage
R
S
= 50
, T
A
= +25
C to T
MIN
12
V/
C
Large Signal Voltage
V
S
=
15V, R
L
2k
, V
OUT
=
10V
15
45
V/mV
Output Voltage Swing
V
S
=
15V, R
L
= 10k
12
14
V
V
S
=
15V, R
L
= 2k
10
13
V
Input Voltage Range
V
S
=
15V
8
10
V
Common Mode Rejection Ratio
R
S
10k
65
90
dB
Supply Voltage Rejection Ratio
R
S
10k
25
200
V/V
Pin Connection Diagram
NTE909
(Top View)
NTE909D
8
7
6
5
4
3
2
1
Input Freq Comp A
Invert Input
NonInvert Input
V ()
Output Freq Comp
Output
V (+)
Input Freq Comp B
Output Freq Comp
N.C.
1
2
3
4
N.C.
N.C.
Input Freq Comp A
Invert Input
5
NonInvert Input
6
V ()
7
N.C.
14
13
12
11
N.C.
Input Freq Comp B
V (+)
10
Output
9
8
N.C.
PDF 
ZIP