NTE92 (NPN) & NTE93 (PNP)
Silicon Complementary Transistors
HiFi Power Amp, Audio Ourtput
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
C), P
C
150W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Matched complementary pairs are available upon request (NTE93MCP). Matched comple-
mentary pairs have their gain specification (h
FE
) matched to within 10% of each other.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 200V
0.1
mA
Emitter Cutoff Current
I
EBO
V
BE
= 6V
0.1
mA
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 50mA
200
V
DC Current Gain
h
FE
V
CE
= 4V, I
C
= 5A
30
120
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 10A, I
B
= 1A
3
V
Transistion Frequency
f
T
V
CE
= 12V, I
E
= 0.5A
20
MHz
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