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KGF1175B/1175
electronic components
This version: Jul. 1998
Previous version: Jan. 1998
GENERAL DESCRIPTION
The KGF1175B is a small-signal amplifier, for frequencies ranging from the UHF-band to the L-
band, that features low noise and low current operation. The KGF1175B specifications are
guaranteed to a fixed matching circuit for 5 V and 850 MHz; external impedance-matching
circuits are also required. Because of the one-input dual gate configuration, low noise, and low
operating current, the KGF1175B is ideal as a receiving-stage head amplifier for personal handy
phones.
The KGF1175 is an amplifier similar to the KGF1175B in specifications and typical properties.
Although possessing S Parameters that are slightly different from those of the KGF1175B, the
KGF1175 meets the specifications for the KGF1175B, even with the same matching circuits as
those of the KGF1175B.
FEATURES
Low current operation: 2.5 mA (max.)
High output power: 3 dBm (min.)
Low noise: 2 dB (max.)
Self-bias circuit configuration with built-in source capacitor
Package: 4PSOP
PACKAGE DIMENSIONS
electronic components
KGF1175B/1175
Small-Signal Amplifier
E2Q0015-38-71
Note: Ask our sales department for detailed requirements of the KGF1175.
1.50.15
3.00.2
0.3 MIN
0.6
+0.1
0.05
0.4
+0.1
0.05
1.80.1
0.850.05
1.90.1
2.80.15
0 to 0.15
0.125
+0.03
0
1.10.15
0.36 0.74
(Unit: mm)
Package material
Pin treatment
Solder plate thickness
Lead frame material
Epoxy resin
Solder plating
5 mm or more
42 alloy
3/8
KGF1175B/1175
electronic components
Item
P
O
Symbol
Condition
Max.
Unit
Output power
--
dBm
2.0
Min.
3.0
--
(*1), P
IN
= 3 dBm
Typ.
--
--
Noise figure
F
(*1)
dB
Linear gain
G
LIN
dB
(Ta = 25C)
--
12.0
--
(*1), P
IN
= 20 dBm
Third-order intercept point
IP
3
dBm
--
--
11
(*1), f
2
= 851 MHz
V
GS(off)
Gate-source cut-off voltage
1.0
V
2.0
V
DS
= 3 V, I
DS
= 120
mA
--
I
DS(off)
Drain-source leakage current
120
mA
--
V
DS
= 3 V, V
GS
= 2.5 V
--
I
GDO
Gate-drain leakage current
60
mA
--
V
GD
= 8 V
--
I
GSS
Gate-source leakage current
12
mA
--
V
GS
= 3 V
--
I
D
Operating current
2.5
mA
--
(*1), P
IN
= 20 dBm
--
I
DSS
Drain current
--
mA
15
V
DS
= 3 V, V
GS
= 0 V
--
--
8
--
Transconductance
gm
V
DS
= 3 V, I
DS
= 1.5 mA
mS
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Item
V
DS
Symbol
Condition
Max.
Unit
Drain-source voltage
Gate-source voltage
Total power dissipation
Channel temperature
V
GS
P
tot
T
ch
Ta = 25C
--
7.0
0.4
200
150
V
V
mW
C
Storage temperature
T
stg
--
125
C
Min.
--
3.0
--
--
45
Ta = 25C
Ta = 25C
Drain current
I
DS
Ta = 25C
60
mA
--
*1 Self-bias condition: V
DD
= 5.0 V
0.25 V, V
G
= 0 V, f
= 850 MHz
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