ChipFind - документация

Электронный компонент: KGF1254B/1254

Скачать:  PDF   ZIP
1/14
KGF1254B/1254
electronic components
This version: Jul. 1998
Previous version: Jan. 1998
GENERAL DESCRIPTION
The KGF1254B is a medium-power amplifier, with frequencies ranging from the UHF-band to
the L-band, that features high output power, low noise, and low current operation. The
KGF1254B specifications are guaranteed to a fixed matching circuit for 5.2 V and 850 MHz;
external impedance-matching circuits are also required. Because of the low noise and high
output power at the low operating current, the KGF1254B is ideal as a transmitter-driver
amplifier for personal handy phones.
The KGF1254 is an amplifier similar to the KGF1254B in specifications and typical properties.
Although having S Parameters that are slightly different from those of the KGF1254B, the
KGF1254 meets the specifications for the KGF1254B, even with the same matching circuits as
those of the KGF1254B.
FEATURES
High output power: 20 dBm (min.)
Low noise: 2.5 dB (max.)
Low current operation: 80 mA (max.)
Self-bias circuit configuration with built-in source capacitor
Package: 4PSOP
PACKAGE DIMENSIONS
electronic components
KGF1254B/1254
Medium-Power Amplifier
E2Q0023-38-71
Note: Ask our sales department for detailed requirements of the KGF1254.
1.50.15
3.00.2
0.3 MIN
0.6
+0.1
0.05
0.4
+0.1
0.05
1.80.1
0.850.05
1.90.1
2.80.15
0 to 0.15
0.125
+0.03
0
1.10.15
0.36 0.74
(Unit: mm)
Package material
Pin treatment
Solder plate thickness
Lead frame material
Epoxy resin
Solder plating
5 mm or more
42 alloy
2/14
KGF1254B/1254
electronic components
MARKING
CIRCUIT
X
NUMERICAL
ALPHABETICAL
PRODUCT TYPE
LOT
NUMBER
(1)
X
D
(2)
(4)
(3)
(1) Gate
(2) Source
(3) Drain
(4) GND
Gate(1)
GND(4)
Drain(3)
Source(2)
3/14
KGF1254B/1254
electronic components
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
*1 Self-bias condition: V
DD
= 5.2 V, V
G
= 0 V
*2 Self-bias condition: V
DD
= 3 V, V
G
= 0 V
Item
V
DS
Symbol
Condition
Max.
Unit
Drain-Source voltage
Gate-Source voltage
Total power dissipation
Channel temperature
V
GS
P
tot
T
ch
Ta = 25C
--
10
0.4
300
150
V
V
mW
C
Storage temperature
T
stg
--
125
C
Min.
--
5.0
--
--
45
Ta = 25C
Ta = 25C
Drain current
I
DS
Ta = 25C
360
mA
--
Item
I
GSS
Symbol
Condition
Max.
Unit
Gate-Source leakage current
72
--
--
--
mA
dB
--
Min.
--
14.0
--
--
--
(*1), P
IN
=
10 dBm
V
GS
= 3 V
Typ.
--
17.0
13.5
11.0
17.0
Linear gain
G
LIN
(*2), P
IN
=
10 dBm
--
--
13.0
--
--
10.0
--
20.0
22.0
Output power
P
O
(*1), P
IN
=
10 dBm
--
dBm
--
20.0
--
--
18.0
--
--
20.0
(*2), P
IN
=
10 dBm
--
--
16.0
--
--
15.0
f = 850 MHz
f = 1.9 GHz
f = 850 MHz
f = 1.5 GHz
f = 1.5 GHz
f = 1.9 GHz
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
(Ta = 25C)
I
GDO
Gate-Drain leakage current
360
mA
--
V
GD
= 15 V
--
I
DS(off)
Drain-Source leakage current
720
mA
--
V
DS
= 3 V, V
GS
= 2.5 V
--
I
DSS
Drain current
--
mA
130
V
DS
= 3 V, V
GS
= 0 V
--
I
D
Operating current
80.0
mA
--
(*1), P
IN
= 10 dBm,
f = 850 MHz
--
V
GS(off)
Gate-Source cut-off voltage
1.0
V
2.0
V
DS
= 3 V, I
DS
= 720
mA
--
gm
Transconductance
--
mS
125
V
DS
= 3 V, I
DS
= 60 mA
--
F
Noise figure
2.5
dB
--
(*1), f = 850 MHz
--
4/14
KGF1254B/1254
electronic components
RF CHARACTERISTICS
5/14
KGF1254B/1254
electronic components
6/14
KGF1254B/1254
electronic components
7/14
KGF1254B/1254
electronic components
8/14
KGF1254B/1254
electronic components
9/14
KGF1254B/1254
electronic components
Typical S Parameters of KGF1254B
Freq(MHz)
500.0
MAG(S
11
) ANG(S
11
) MAG(S
21
) ANG(S
21
) MAG(S
12
) ANG(S
12
) MAG(S
22
) ANG(S
22
)
V
DD
= 3 V, V
G
= 0 V, I
D
= 43.8 mA
600.0
700.0
800.0
900.0
1000.0
1100.0
1200.0
1300.0
1400.0
1500.0
1600.0
1700.0
1800.0
1900.0
2000.0
2100.0
2200.0
2300.0
2400.0
2500.0
2600.0
2700.0
2800.0
2900.0
3000.0
0.882
0.858
0.828
0.797
0.770
0.741
0.720
0.700
0.681
0.666
0.656
0.648
0.636
0.629
0.629
0.623
0.620
0.616
0.621
0.623
0.623
0.625
0.632
0.635
0.638
0.647
54.29
61.91
70.32
77.65
84.78
91.04
97.10
102.38
107.86
113.07
117.36
122.06
126.25
130.79
135.10
139.85
144.21
147.51
152.56
156.23
160.44
164.40
168.81
172.79
177.44
178.65
6.342
5.839
5.529
5.244
4.984
4.689
4.430
4.176
3.958
3.747
3.590
3.402
3.263
3.095
2.973
2.851
2.717
2.619
2.498
2.408
2.304
2.217
2.128
2.047
1.965
1.895
129.65
124.19
117.60
104.10
97.72
91.83
86.10
80.86
75.51
70.87
65.72
61.49
57.06
48.02
43.82
39.65
35.18
31.36
27.83
23.62
19.87
16.31
12.51
8.54
0.044
0.050
0.050
0.055
0.058
0.062
0.068
0.076
0.084
0.093
0.099
0.108
0.119
0.128
0.138
0.152
0.166
0.178
0.192
0.205
0.218
0.230
0.243
0.256
0.270
0.283
59.98
57.96
59.06
63.86
63.60
65.29
66.39
67.73
69.74
69.37
68.47
70.21
70.91
68.98
69.75
66.93
67.20
64.35
64.22
61.50
58.91
56.57
54.01
52.28
49.71
47.52
0.291
0.299
0.296
0.289
0.287
0.279
0.276
0.280
0.290
0.292
0.307
0.309
0.318
0.330
0.348
0.358
0.363
0.386
0.395
0.406
0.429
0.441
0.457
0.471
0.486
0.508
91.01
102.52
112.71
119.30
125.16
128.77
132.96
135.93
137.58
140.07
143.39
146.87
148.45
151.18
154.04
155.23
159.28
163.29
165.34
169.53
171.79
175.67
179.59
177.80
173.52
169.33
52.30
110.96
10/14
KGF1254B/1254
electronic components
Typical S Parameters of KGF1254B
V
DD
= 3 V, V
G
= 0 V, I
D
= 43.8 mA
Frequency : 0.5 to 3.0 GHz
Z
0
= 50 W
11/14
KGF1254B/1254
electronic components
Freq(MHz)
500.0
MAG(S
11
) ANG(S
11
) MAG(S
21
) ANG(S
21
) MAG(S
12
) ANG(S
12
) MAG(S
22
) ANG(S
22
)
V
DD
= 5 V, V
G
= 0 V, I
D
= 45.1 mA
600.0
700.0
800.0
900.0
1000.0
1100.0
1200.0
1300.0
1400.0
1500.0
1600.0
1700.0
1800.0
1900.0
2000.0
2100.0
2200.0
2300.0
2400.0
2500.0
2600.0
2700.0
2800.0
2900.0
3000.0
0.885
0.864
0.836
0.812
0.786
0.765
0.743
0.725
0.707
0.697
0.689
0.679
0.673
0.667
0.669
0.661
0.660
0.660
0.667
0.663
0.665
0.671
0.677
0.682
0.680
0.688
52.63
59.83
67.93
75.08
82.06
88.22
94.20
99.50
105.20
110.17
114.84
119.36
123.74
128.52
133.13
137.70
142.35
145.82
151.02
155.34
159.71
163.88
168.72
173.12
177.75
178.08
6.302
5.861
5.553
5.277
5.005
4.724
4.471
4.221
3.978
3.783
3.624
3.432
3.289
3.123
2.995
2.872
2.730
2.630
2.497
2.411
2.294
2.208
2.118
2.025
1.936
1.854
130.04
124.38
110.70
103.96
97.24
91.06
85.19
79.95
74.02
69.53
64.21
59.89
50.31
45.87
41.41
37.21
32.36
28.42
24.90
16.64
12.64
8.81
4.75
0.040
0.043
0.045
0.047
0.051
0.056
0.062
0.068
0.079
0.084
0.094
0.105
0.115
0.127
0.139
0.154
0.166
0.180
0.199
0.215
0.225
0.241
0.259
0.272
0.284
0.301
61.92
59.74
60.36
62.83
62.81
68.01
71.47
73.68
76.17
76.17
75.92
79.05
77.97
76.07
76.30
73.45
74.08
69.70
68.97
67.08
63.38
60.62
57.47
55.78
52.98
50.65
0.322
0.321
0.315
0.307
0.300
0.299
0.298
0.303
0.311
0.326
0.334
0.341
0.353
0.367
0.388
0.403
0.408
0.427
0.444
0.459
0.479
0.493
0.510
0.523
0.542
0.557
76.26
86.96
96.63
102.22
107.66
111.14
114.83
119.37
122.26
125.15
128.57
132.48
135.45
138.21
142.51
144.74
149.35
153.97
157.05
161.21
164.88
168.63
173.48
177.27
178.12
173.21
55.16
117.38
20.26
Typical S Parameters of KGF1254B
12/14
KGF1254B/1254
electronic components
Typical S Parameters of KGF1254B
V
DD
= 5 V, V
G
= 0 V, I
D
= 45.1 mA
Frequency : 0.5 to 3.0 GHz
Z
0
= 50 W
13/14
KGF1254B/1254
electronic components
Test Circuit and Bias Configuration for KGF1254B at 1.5 GHz
Test Circuit and Bias Configuration for KGF1254B at 850 MHz
IN
T
1
: Z
0
= 75
W, E = 30 deg
T
2
: Z
0
= 75
W, E = 28 deg
T
3
= T
6
: Z
0
= 100
W, E = 5 deg
C
1
= 7.0 pF, C
2
= 0.8 pF, C
3
= 5.0 pF, C
4
= 5.5 pF, C
S
= 100 pF
C
C(DC Block)
= 1000 pF, C
F(Feed through)
= 1000 pF
RFC = 200 nH, R
G
= 1000
W
OUT
(1)
(3)
(2)
(4)
KGF
1254B
R
G
C
C
T
2
T
1
C
1
C
S
T
5
T
4
C
4
C
C
C
F
V
DD
RFC
T
4
: Z
0
= 75
W, E = 30 deg
T
5
: Z
0
= 75
W, E = 30 deg
T
7
: Z
0
= 100
W, E = 1 deg
T
3
C
2
T
7
T
6
C
3
IN
T
1
: Z
0
= 75
W, E = 65 deg
T
2
: Z
0
= 75
W, E = 40 deg
T
3
= T
6
= T
7
: Z
0
= 100
W, E = 8 deg
C
1
= 2.4 pF, C
2
= 1.2 pF, C
3
= 0.6 pF, C
S
= 100 pF
C
C(DC Block)
= 1000 pF, C
B(By-pass)
= 1000 pF, C
F(Feed through)
= 1000 pF
RFC = 60 nH, R
G
= 1000
W
OUT
(1)
(3)
(2)
(4)
KGF
1254B
R
G
C
C
T
2
T
1
C
S
T
5
T
4
C
3
C
C
V
DD
RFC
T
4
: Z
0
= 75
W, E = 50 deg
T
5
: Z
0
= 75
W, E = 50 deg
T
8
: Z
0
= 100
W, E = 1 deg
T
3
C
1
T
8
T
6
C
2
T
7
C
B
C
F
14/14
KGF1254B/1254
electronic components
Test Circuit and Bias Configuration for KGF1254B at 1.9 GHz
IN
T
1
: Z
0
= 75
W, E = 65 deg
T
2
: Z
0
= 75
W, E = 40 deg
T
3
= T
6
= T
7
: Z
0
= 100
W, E = 1 deg
C
1
= 1.7 pF, C
2
= 1.3 pF, C
3
= 0.2 pF, C
S
= 100 pF
C
C(DC Block)
= 1000 pF, C
B(By-pass)
= 1000 pF, C
F(Feed through)
= 1000 pF
RFC = 60 nH, R
G
= 1000
W
OUT
(1)
(3)
(2)
(4)
KGF
1254B
R
G
C
C
T
2
T
1
C
S
T
5
T
4
C
3
C
C
V
DD
RFC
T
4
: Z
0
= 75
W, E = 50 deg
T
5
: Z
0
= 75
W, E = 50 deg
T
8
: Z
0
= 100
W, E = 1 deg
T
3
C
1
T
8
T
6
C
2
T
7
C
B
C
F