1/6
KGF1305T
electronic components
This version: Jul. 1998
Previous version: Jan. 1998
GENERAL DESCRIPTION
The KGF1305T, housed in a ceramic package with integrated heat sink, is a discrete UHF-band
power FET that features high efficiency, high output power, and low current operation. The
KGF1305T specifications are guaranteed to a fixed matching circuit for 5.4 V and 850 MHz;
external impedance-matching circuits are also required. Because of its high efficiency, high
output power (more than 31.5 dBm), and low thermal resistance, the KGF1305T is ideal as a
transmitter-final-stage amplifier for personal handy phones, such as analog cellular phones.
FEATURES
High output power: 31.5 dBm (min.)
High efficiency: 66% (min.)
Low thermal resistance: 12
C/W (typ.)
Package: 3PHTP
PACKAGE DIMENSIONS
electronic components
KGF1305T
Power FET (Ceramic Package Type)
E2Q0037-38-71
3.30.15
7.30.15
2.30.05
3.10.15
0.1250.05
0.630.15
3.50.05
1.7
0.2
0.50.05
(Unit: mm)
4.70.15
1.10.15
4.50.15
Package material
Pin treatment
plate thickness
Lead frame material
Al
2
0
3
Ni/Au plating
Au:1.0 mm or more
Fe-Ni-Co alloy
5.9 MAX
2/6
KGF1305T
electronic components
CIRCUIT
MARKING
X X X X
MONTHLY LOT NUMBER
PRODUCTION MONTH
(1-9,X,Y,Z)
PRODUCTION YEAR
(LOWEST DIGIT)
K 1 3 0 5
(1)
PRODUCT NAME
LOT NUMBER
(2)
(3)
(1) Gate
(2) Source
(3) Drain
Gate(1)
Drain(3)
Source(2)
3/6
KGF1305T
electronic components
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
*1 Condition: f = 850 MHz, V
DS
= 5.4 V, I
DSQ
= 150 mA
Item
V
DS
Symbol
Condition
Max.
Unit
Drain-source voltage
Gate-source voltage
Total power dissipation
Channel temperature
V
GS
P
tot
T
ch
Ta = 25C
--
10
0.4
3
150
V
V
W
C
Storage temperature
T
stg
--
125
C
Min.
--
6.0
--
--
45
Ta = Tc = 25C
Ta = 25C
Drain current
I
DS
Ta = 25C
2
A
--
Item
P
O
Symbol
Condition
Max.
Unit
Output power
--
dBm
--
Min.
31.5
66
(*1), P
IN
= 20 dBm
Typ.
31.8
70
Drain efficiency
h
D
(*1), P
IN
= 20 dBm
%
(Ta = 25C)
Thermal resistance
R
th
C/W
--
--
12
Channel to case
V
GS(off)
Gate-source cut-off voltage
2.5
V
4.0
V
DS
= 3 V, I
DS
= 3 mA
--
I
DSS
Drain current
--
A
1.3
V
DS
= 1.5 V, V
GS
= 0 V
--
I
DS(off)
Drain-source leakage current
3
mA
--
V
DS
= 10 V, V
GS
= 6 V
--
I
GDO
Gate-drain leakage current
1
mA
--
V
GD
= 16 V
--
I
GSS
Gate-source leakage current
0.3
mA
--
V
GS
= 6 V
--
g
m
Transconductance
--
mS
400
V
DS
= 3 V, I
DS
= 400 mA
--
PDF 
ZIP
