1/7
KGF1313
electronic components
This version: Jul. 1998
Previous version: Jan. 1998
electronic components
KGF1313
Power FET (Plastic Package Type)
GENERAL DESCRIPTION
The KGF1313, housed in a SOT-89 type plastic-mold package, is a discrete power FET with
frequencies ranging from the UHF-band to the L-band. This device features high efficiency and
high output power. The KGF1313 specifications are guaranteed to a fixed matching circuit for
3.4 V and 1.9 GHz; external impedance-matching circuits are also required. Because of its high
efficiency, high output power (more than 27 dBm), and plastic package, the KGF1313 is ideal as
a transmitter-final-stage amplifier for personal handy phones, such as digital keying cordless
phones.
FEATURES
Specifications guaranteed to a fixed matching circuits for 3.4 V, 1.9 GHz
High output power: 27 dBm (min.) at 1.9 GHz
High efficiency: 50% (typ.) at 1.9 GHz
Low thermal resistance: 23
C/W (typ.)
Package: 3PMMP (SOT-89 type)
PACKAGE DIMENSIONS
E2Q0029-38-72
1.5
0.1
0.39
0.05
(Unit: mm)
4.5
0.1
4
0.2
2.5
0.1
1
0.2
+0.08
0.05
0.4
+0.08
0.05
0.4
+0.08
0.05
0.48
1.5
0.1 1.5
0.1
3
0.1
Package material
Pin treatment
Solder plate thickness
Lead frame material
Epoxy resin
Solder plating
5 mm or more
Cu
1.6
+0.15
0.10
3/7
KGF1313
electronic components
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
*1 Condition: f
= 1.9 GHz, V
DS
= 3.4 V, I
DSQ
= 200 mA
Item
V
DS
Symbol
Condition
Max.
Unit
Drain-source voltage
Gate-source voltage
Total power dissipation
Channel temperature
V
GS
P
tot
T
ch
Ta = 25C
--
7.0
0.4
4.5
150
V
V
W
C
Storage temperature
T
stg
--
125
C
Min.
--
5.0
--
--
45
Ta = Tc = 25C
Ta = 25C
Drain current
I
DS
Ta = 25C
2.0
A
--
Item
P
O
Symbol
Condition
Max.
Unit
Output power
--
dBm
--
Min.
27.0
45
(*1), P
IN
= 20 dBm
Typ.
27.5
50
Drain efficiency
h
D
(*1), P
IN
= 20 dBm
%
Linear gain
G
LIN
dB
(Ta = 25C)
--
--
9.5
(*1), P
IN
= 0 dBm
Thermal resistance
R
th
C/W
--
--
15
Channel to case
V
GS(off)
Gate-source cut-off voltage
2.0
V
3.0
V
DS
= 3 V, I
DS
= 4.0 mA
--
I
DSS
Drain current
--
A
1.3
V
DS
= 1.5 V, V
GS
= 0 V
--
I
DS(off)
Drain-source leakage current
1500
mA
--
V
DS
= 7 V, V
GS
= 5 V
--
I
GDO
Gate-drain leakage current
500
mA
--
V
GD
= 12 V
--
I
GSS
Gate-source leakage current
100
mA
--
V
GS
= 5 V
--
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