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KGF1522
electronic components
This version: Jul. 1998
Previous version: Jan. 1998
E2Q0019-38-71
electronic components
KGF1522
Small-Signal Amplifier
GENERAL DESCRIPTION
The KGF1522 is a high performance GaAs FET small-signal amplifier for L-band frequencies that
features low voltage operation, low current operation, low noise, and low distortion. The
KGF1522 specifications are guaranteed to a fixed matching circuit for 3 V and 1.9 GHz; external
impedance-matching circuits are also required. Because of its high 3rd-order intercept point,
even at its low operating current, the KGF1522 is ideal as a signal amplifier for L-band personal
handy phones, such as digital keying cordless phones that require low intermodulation proper-
ties.
FEATURES
Low voltage and low current operation: 3 V, 5 mA (max.)
Specifications guaranteed to a fixed matching circuits for 3 V, 1.9 GHz
Low noise figure: 1.3 dB (typ.) at 1.9 GHz
High linear gain: 12.5 dB (typ.) at 1.9 GHz
High output power: 1 dB compression point = 4.5 dBm (typ.) at 1.9 GHz
Low distortion: 3rd-order intercept point = 17 dBm (typ.) at 1.9 GHz
Self-bias circuit configuration with built-in source capacitor
Package: 4PSOP
PACKAGE DIMENSIONS
1.50.15
3.00.2
0.3 MIN
0.6
+0.1
0.05
0.4
+0.1
0.05
1.80.1
0.850.05
1.90.1
2.80.15
0 to 0.15
0.125
+0.03
0
1.10.15
0.36 0.74
(Unit: mm)
Package material
Pin treatment
Solder plate thickness
Lead frame material
Epoxy resin
Solder plating
5 mm or more
42 alloy
3/8
KGF1522
electronic components
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
*1 Self-bias condition: V
DD
= 3 V
0.3 V, V
G
= 0 V, f
= 1.9 GHz
Item
V
DS
Symbol
Condition
Max.
Unit
Drain-source voltage
Gate-source voltage
Total power dissipation
Channel temperature
V
GS
P
tot
T
ch
Ta = 25C
--
4.0
0.4
200
150
V
V
mW
C
Storage temperature
T
stg
--
125
C
Min.
--
3.0
--
--
45
Ta = 25C
Ta = 25C
Drain current
I
DS
Ta = 25C
50
mA
--
Item
P
O1
Symbol
Condition
Max.
Unit
Output power
--
dBm
2.0
Min.
2.0
--
(*1)
Typ.
4.5
1.3
Noise figure
F
(*1)
dB
Linear gain
G
LIN
dB
(Ta = 25C)
--
11.0
12.5
(*1), P
IN
= 20 dBm
Third-order intercept point
IP
3
dBm
--
--
17
(*2), f
2
= 1.901 GHz
V
GS(off)
Gate-source cut-off voltage
0.6
V
1.4
V
DS
= 3 V, I
DS
= 100
mA
--
I
DSS
Drain current
--
mA
15
V
DS
= 3 V, V
GS
= 0 V
25
I
DS(off)
Drain-source leakage current
30
mA
--
V
DS
= 3 V, V
GS
= 2 V
--
I
GDO
Gate-drain leakage current
30
mA
--
V
GD
= 6 V
--
I
GSS
Gate-source leakage current
30
mA
--
V
GS
= 3 V
--
I
D
Operating current
5.0
mA
--
(*1), P
IN
= 20 dBm
3.5
gm
Transconductance
--
mS
20
V
DS
= 3 V, I
DS
= 4 mA
25
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