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Электронный компонент: MD51V64405-60TA

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1/15
Semiconductor
MD51V64405
DESCRIPTION
The MD51V64405 is a 16,777,216-word
4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MD51V64405 achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MD51V64405 is available in a 32-pin plastic SOJ or 32-pin plastic TSOP.
FEATURES
16,777,216-word
4-bit configuration
Single 3.3 V power supply,
0.3 V tolerance
Input
: LVTTL compatible, low input capacitance
Output : LVTTL compatible, 3-state
Refresh :
RAS-only refresh
: 8192 cycles/64 ms
CAS before RAS refresh, hidden refresh
: 4096 cycles/64 ms
Fast page mode with EDO, read modify write capability
CAS before RAS refresh, hidden refresh, RAS-only refresh capability
Package options:
32-pin 400 mil plastic SOJ
(SOJ32-P-400-1.27)
(Product : MD51V64405-xxJA)
32-pin 400 mil plastic TSOP
(TSOPII32-P-400-1.27-K) (Product : MD51V64405-xxTA)
xx indicates speed rank.
PRODUCT FAMILY
Semiconductor
MD51V64405
16,777,216-Word
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
E2G0137-18-11
84 ns
504 mW
Family
Access Time (Max.)
Cycle Time
(Min.)
Standby (Max.)
Power Dissipation
MD51V64405-50
t
RAC
50 ns
t
AA
25 ns
t
CAC
13 ns
t
OEA
13 ns
MD51V64405-60
60 ns
104 ns
432 mW
30 ns
15 ns
15 ns
Operating (Max.)
1.8 mW
This version: Mar. 1998
2/15
Semiconductor
MD51V64405
PIN CONFIGURATION (TOP VIEW)
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
3
4
5
9
10
11
12
13
DQ2
NC
NC
RAS
A0
A1
A2
A3
30
29
28
24
23
22
21
20
DQ3
NC
NC
A12R
A11R
A10
A9
A8
2
DQ1
31 DQ4
1
V
CC
32 V
SS
32-Pin Plastic SOJ
3
4
5
9
10
11
12
13
30
29
28
24
23
22
21
20
2
31
1
32
32-Pin Plastic TSOP
(K Type)
6
NC
27 NC
27
8
WE
25
OE
25
6
8
7
NC
26
CAS
26
7
14
A4
19 A7
14
19
DQ2
NC
NC
RAS
A0
A1
A2
A3
DQ1
V
CC
NC
WE
NC
A4
DQ3
NC
NC
A12R
A11R
A10
A9
A8
DQ4
V
SS
NC
OE
CAS
A7
Pin Name
Function
A0 - A10,
Address Input
RAS
Row Address Strobe
CAS
Column Address Strobe
DQ1 - DQ4
Data Input/Data Output
OE
Output Enable
WE
Write Enable
V
CC
Power Supply (3.3 V)
NC
No Connection
A11R, A12R
15
A5
18 A6
15
18
16
V
CC
17 V
SS
16
17
A5
V
CC
A6
V
SS
V
SS
Ground (0 V)
3/15
Semiconductor
MD51V64405
BLOCK DIAGRAM
Timing
Generator
Refresh
Control Clock
Column
Address
Buffers
Internal
Address
Counter
Row
Address
Buffers
Row
Deco-
ders
Word
Drivers
Memory
Cells
Sense Amplifiers
Column Decoders
I/O
Controller
I/O
Selector
Output
Buffers
Input
Buffers
On Chip
V
BB
Generator
On Chip
IV
CC
Generator
V
CC
DQ1 - DQ4
CAS
WE
A0 - A10
11
11
4
4
4
4
4
4
13
11
OE
RAS
V
SS
2
A11R, A12R
4/15
Semiconductor
MD51V64405
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Recommended Operating Conditions
Capacitance
*: Ta = 25
C
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
V
T
Symbol
I
OS
P
D
*
T
opr
T
stg
0.5 to 4.6
50
1
0 to 70
55 to 150
Rating
mA
W
C
C
Parameter
V
Unit
Power Supply Voltage
Input High Voltage
Input Low Voltage
V
CC
Symbol
V
SS
V
IH
V
IL
3.3
0
--
--
Typ.
Parameter
3.0
0
2.0
0.3
Min.
3.6
0
V
CC
+ 0.3
0.8
Max.
(Ta = 0C to 70C)
V
Unit
V
V
V
Input Capacitance
(A0 - A10, A11R, A12R)
Input Capacitance (
RAS, CAS, WE, OE)
Output Capacitance (DQ1 - DQ4)
C
IN1
Symbol
C
IN2
C
I/O
5
7
7
Max.
pF
Unit
pF
pF
Parameter
(V
CC
= 3.3 V 0.3 V, Ta = 25C, f = 1 MHz)
--
--
--
Typ.
5/15
Semiconductor
MD51V64405
DC Characteristics
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS = V
IL
.
3. The address can be changed once or less while
CAS = V
IH
.
Parameter
Symbol
Condition
MD51V64405
-60
MD51V64405
-50
(V
CC
= 3.3 V 0.3 V, Ta = 0C to 70C)
I
OH
= 2.0 mA
Output High Voltage
I
OL
= 2.0 mA
Output Low Voltage
0 V
V
I
V
CC
+ 0.3 V;
All other pins not
Input Leakage Current
under test = 0 V
DQ disable
Output Leakage Current
0 V
V
O
V
CC
RAS, CAS cycling,
Average Power
t
RC
= Min.
Supply Current
(Operating)
RAS, CAS = V
IH
Power Supply
RAS, CAS
Current (Standby)
RAS cycling,
Average Power
CAS = V
IH
,
Supply Current
t
RC
= Min.
(
RAS-only Refresh)
RAS = V
IH
,
Power Supply
CAS = V
IL
,
Current (Standby)
DQ = enable
Average Power
CAS before RAS
Supply Current
(
CAS before RAS Refresh)
RAS = V
IL
,
Average Power
CAS cycling,
Supply Current
t
HPC
= Min.
(Fast Page Mode)
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
CC5
I
CC6
I
CC7
V
CC
0.2 V
Min.
2.4
0
10
10
--
--
--
--
--
--
--
Max.
V
CC
0.4
10
10
90
1
0.5
90
5
120
90
Min.
2.4
0
10
10
--
--
--
--
--
--
--
Max.
V
CC
0.4
10
10
100
1
0.5
100
5
140
100
Unit
V
V
mA
mA
mA
mA
mA
mA
mA
mA
Note
1, 2
1
1, 2
1
1, 2
1, 3
RAS cycling,