Semiconductor
MD51V65165
1/16
DESCRIPTION
The MD51V65165 is a 4,194,304-word
16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MD51V65165 achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MD51V65165 is available in a 50-pin plastic SOJ or 50-pin plastic TSOP.
FEATURES
4,194,304-word
16-bit configuration
Single 3.3 V power supply,
0.3 V tolerance
Input
: LVTTL compatible, low input capacitance
Output
: LVTTL compatible, 3-state
Refresh
:
RAS-only refresh
: 4096 cycles/64 ms
CAS before RAS refresh, hidden refresh
: 4096 cycles/64 ms
Fast page mode with EDO, read modify write capability
CAS before RAS refresh, hidden refresh, RAS-only refresh capability
Package options:
50-pin 400 mil plastic SOJ
(SOJ50-P-400-0.80)
(Product : MD51V65165-xxJA)
50-pin 400 mil plastic TSOP
(TSOPII50-P-400-0.80-1K) (Product : MD51V65165-xxTA)
xx indicates speed rank.
PRODUCT FAMILY
Semiconductor
MD51V65165
4,194,304-Word
16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
84 ns
504 mW
Family
Access Time (Max.)
Cycle Time
(Min.)
Standby (Max.)
Power Dissipation
MD51V65165-50
t
RAC
50 ns
t
AA
25 ns
t
CAC
13 ns
t
OEA
13 ns
MD51V65165-60
60 ns
104 ns
432 mW
30 ns
15 ns
15 ns
Operating (Max.)
1.8 mW
E2G0146-18-11
This version: Mar. 1998
Semiconductor
MD51V65165
2/16
PIN CONFIGURATION (TOP VIEW)
A11R
A10R
A9
A8
A7
A6
A0
A1
A2
A3
A4
A5
1
2
3
4
5
6
7
8
9
10
11
12
13
21
30
38
39
40
41
42
43
44
45
46
47
48
49
50
V
CC
DQ1
DQ2
DQ3
DQ4
V
CC
DQ5
DQ6
DQ7
DQ8
NC
V
CC
WE
A2
A9
LCAS
V
SS
NC
DQ9
DQ10
DQ11
DQ12
V
SS
DQ13
DQ14
DQ15
DQ16
V
SS
14
37
RAS
UCAS
15
36
NC
OE
16
35
NC
NC
17
34
NC
NC
18
33
NC
NC
19
32
A0
A11R
20
31
A1
A10R
1
2
3
4
5
6
7
8
9
10
11
25
26
40
41
42
43
44
45
46
47
48
49
50
V
CC
DQ1
DQ2
DQ3
DQ4
V
CC
DQ5
DQ6
DQ7
DQ8
NC
V
CC
V
SS
NC
DQ9
DQ10
DQ11
DQ12
V
SS
DQ13
DQ14
DQ15
DQ16
V
SS
15
36
NC
OE
16
35
NC
NC
17
34
NC
NC
18
33
NC
NC
19
32
20
31
21
30
22
29
23
28
24
27
50-Pin Plastic TSOP
(K Type)
22
29
A3
A8
23
28
A4
A7
24
27
A5
A6
25
26
V
CC
V
SS
12
13
38
39
V
CC
WE
LCAS
V
SS
14
37
RAS
UCAS
50-Pin Plastic SOJ
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
Pin Name
Function
A0 - A9,
Address Input
RAS
Row Address Strobe
LCAS
Lower Byte Column Address Strobe
DQ1 - DQ16
Data Input/Data Output
OE
Output Enable
WE
Write Enable
V
CC
Power Supply (3.3 V)
NC
No Connection
A10R, A11R
UCAS
Upper Byte Column Address Strobe
V
SS
Ground (0 V)
Semiconductor
MD51V65165
4/16
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Recommended Operating Conditions
Capacitance
*: Ta = 25
C
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
V
T
Symbol
I
OS
P
D
*
T
opr
T
stg
0.5 to 4.6
50
1
0 to 70
55 to 150
Rating
mA
W
C
C
Parameter
V
Unit
Power Supply Voltage
Input High Voltage
Input Low Voltage
V
CC
Symbol
V
SS
V
IH
V
IL
3.3
0
--
--
Typ.
Parameter
3.0
0
2.0
0.3
Min.
3.6
0
V
CC
+ 0.3
0.8
Max.
(Ta = 0C to 70C)
V
Unit
V
V
V
Input Capacitance
(A0 - A9, A10R, A11R)
Input Capacitance
(
RAS, LCAS, UCAS, WE, OE)
Output Capacitance (DQ1 - DQ16)
C
IN1
Symbol
C
IN2
C
I/O
5
7
7
Max.
pF
Unit
pF
pF
Parameter
(V
CC
= 3.3 V 0.3 V, Ta = 25C, f = 1 MHz)
--
--
--
Typ.
Semiconductor
MD51V65165
5/16
DC Characteristics
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS = V
IL
.
3. The address can be changed once or less while
CAS = V
IH
.
Parameter
Symbol
Condition
MD51V65165
-60
MD51V65165
-50
(V
CC
= 3.3 V 0.3 V, Ta = 0C to 70C)
I
OH
= 2.0 mA
Output High Voltage
I
OL
= 2.0 mA
Output Low Voltage
0 V
V
I
V
CC
+ 0.3 V;
All other pins not
Input Leakage Current
under test = 0 V
DQ disable
Output Leakage Current
0 V
V
O
V
CC
RAS, CAS cycling,
Average Power
t
RC
= Min.
Supply Current
(Operating)
RAS, CAS = V
IH
Power Supply
RAS, CAS
Current (Standby)
RAS cycling,
Average Power
CAS = V
IH
,
Supply Current
t
RC
= Min.
(
RAS-only Refresh)
RAS = V
IH
,
Power Supply
CAS = V
IL
,
Current (Standby)
DQ = enable
Average Power
CAS before RAS
Supply Current
(
CAS before RAS Refresh)
RAS = V
IL
,
Average Power
CAS cycling,
Supply Current
t
HPC
= Min.
(Fast Page Mode)
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
CC5
I
CC6
I
CC7
V
CC
0.2 V
Min.
2.4
0
10
10
--
--
--
--
--
--
--
Max.
V
CC
0.4
10
10
120
1
0.5
120
5
120
120
Min.
2.4
0
10
10
--
--
--
--
--
--
--
Max.
V
CC
0.4
10
10
140
1
0.5
140
5
140
140
Unit
V
V
mA
mA
mA
mA
mA
mA
mA
mA
Note
1, 2
1
1, 2
1
1, 2
1, 3
RAS cycling,
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