Semiconductor
MSC2323258D-xxBS4/DS4
2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
This version: Mar. 3. 1999
DESCRIPTION
The MSC2323258D-xxBS4/DS4 is a fully decoded, 2,097,152-word x 32-bit CMOS dynamic random access
memory module composed of four 16Mb DRAMs in SOJ packages mounted with eight decoupling capacitors on a
72-pin glass epoxy single-inline package. This module supports any application where high density and large
capacity of storage memory are required.
FEATURES
2,097,152-word x 32-bit organization
72-pin Single Inline Memory Module
MSC2323258D-xxBS4 : Gold tab
MSC2323258D-xxDS4 : Solder tab
Single +5V supply 10% tolerance
Input
: TTL compatible
Output
: TTL compatible, 3-state
Refresh
: 1024cycles/16ms
/CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
Fast page mode with EDO capability
PRODUCT FAMILY
Access Time (Max.)
Power Dissipation
Family
t
RAC
t
AA
t
CAC
Cycle
Time
(Min.)
Operating (Max.)
Standby (Max.)
MSC2323258D-60BS4/DS4
60ns
30ns
15ns
104ns
1430mW
MSC2323258D-70BS4/DS4
70ns
35ns
20ns
124ns
1320mW
22mW
Semiconductor
MSC2323258D
MODULE OUTLINE
1
72
R1.57
6.35
1.04Typ.
1.270.1
95.25
2.03Typ.
6.35Typ.
Typ.
6.35
Typ.
10.16
3.18
19.00.2
101.19Typ.
107.950.2
*1
3.38Typ.
5.7Min.
9.3Max.
+0.1
-0.08
1.27
(Unit : mm)
MSC2323258D-xxBS4/DS4
*1
The common size difference of the board width 12.5mm of its height is specified as 0.2.
The value above 12.5mm is specified as 0.5.
Semiconductor
MSC2323258D
PIN CONFIGURATION
Pin No.
Pin Name
Pin No.
Pin Name
Pin No.
Pin Name
Pin No.
Pin Name
1
V
SS
19
NC
37
NC
55
DQ11
2
DQ0
20
DQ4
38
NC
56
DQ27
3
DQ16
21
DQ20
39
V
SS
57
DQ12
4
DQ1
22
DQ5
40
/CAS0
58
DQ28
5
DQ17
23
DQ21
41
/CAS2
59
V
CC
6
DQ2
24
DQ6
42
/CAS3
60
DQ29
7
DQ18
25
DQ22
43
/CAS1
61
DQ13
8
DQ3
26
DQ7
44
/RAS0
62
DQ30
9
DQ19
27
DQ23
45
/RAS1
63
DQ14
10
V
CC
28
A7
46
NC
64
DQ31
11
NC
29
NC
47
/WE
65
DQ15
12
A0
30
V
CC
48
NC
66
NC
13
A1
31
A8
49
DQ8
67
PD1
14
A2
32
A9
50
DQ24
68
PD2
15
A3
33
/RAS3
51
DQ9
69
PD3
16
A4
34
/RAS2
52
DQ25
70
PD4
17
A5
35
NC
53
DQ10
71
NC
18
A6
36
NC
54
DQ26
72
V
SS
Presence Detect Pins
Pin No.
Pin Name
MSC2323258D
-60BS4/DS4
MSC2323258D
-70BS4/DS4
67
PD1
NC
NC
68
PD2
NC
NC
69
PD3
NC
V
SS
70
PD4
NC
NC
Semiconductor
MSC2323258D
BLOCK DIAGRAM
/WE
/CAS1
/CAS0
A0-A9
/CAS3
/CAS2
DQ0
A0-A9
DQ1
DQ3
DQ2
DQ4
DQ5
/RAS
/LCAS
/UCAS
DQ6
DQ1
DQ2
DQ3
/RAS1
V
CC
V
SS
C1-C8
DQ8
V
SS
/WE
/OE
V
CC
DQ4
DQ5
DQ6
DQ7
DQ7
DQ8
DQ9
DQ11
DQ10
DQ12
DQ13
DQ14
DQ9
DQ10
DQ11
DQ16
DQ12
DQ13
DQ14
DQ15
DQ15
A0-A9
DQ1
DQ3
DQ2
DQ4
DQ5
/RAS
/LCAS
/UCAS
DQ6
DQ8
V
CC
/WE
/OE
V
SS
DQ7
DQ9
DQ11
DQ10
DQ12
DQ13
DQ14
DQ16
DQ15
/RAS0
/RAS2
/RAS3
DQ16
A0-A9
DQ1
DQ3
DQ2
DQ4
DQ5
/RAS
/LCAS
/UCAS
DQ6
DQ17
DQ18
DQ19
DQ8
V
SS
/WE
/OE
V
CC
DQ20
DQ21
DQ22
DQ23
DQ7
DQ24
DQ9
DQ11
DQ10
DQ12
DQ13
DQ14
DQ25
DQ26
DQ27
DQ16
DQ28
DQ29
DQ30
DQ31
DQ15
A0-A9
DQ1
DQ3
DQ2
DQ4
DQ5
/RAS
/LCAS
/UCAS
DQ6
DQ8
V
CC
/WE
/OE
V
SS
DQ7
DQ9
DQ11
DQ10
DQ12
DQ13
DQ14
DQ16
DQ15
Semiconductor
MSC2323258D
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to V
SS
V
IN
, V
OUT
-1.0 to +7.0
V
Voltage on V
CC
Supply Relative to V
SS
V
CC
-1.0 to +7.0
V
Short Circuit Output Current
I
OS
50
mA
Power Dissipation
P
D
*
4
W
Operating Temperature
T
OPR
0 to +70
C
Storage Temperature
T
STG
-40 to +125
C
* Ta = 25C
Recommended Operating Conditions
( Ta = 0C to +70C )
Parameter
Symbol
Min.
Typ.
Max.
Unit
V
CC
4.5
5.0
5.5
V
Power Supply Voltage
V
SS
0
0
0
V
Input High Voltage
V
IH
2.4
-
6.5
V
Input Low Voltage
V
IL
-1.0
-
0.8
V
Capacitance
( V
CC
= 5V 10%, Ta = 25C, f = 1 MHz )
Parameter
Symbol
Typ.
Max.
Unit
Input Capacitance (A0 - A9)
C
IN1
-
32
pF
Input Capacitance (/WE)
C
IN2
-
35
pF
Input Capacitance (/RAS0- /RAS3)
C
IN3
-
13
pF
Input Capacitance (/CAS0- /CAS3)
C
IN4
-
20
pF
I/O Capacitance (DQ0 - DQ31)
C
DQ
-
25
pF
Note:
Capacitance measured with Boonton Meter.
Semiconductor
MSC2323258D
DC Characteristics
(V
CC
= 5V 10%, Ta = 0C to +70C )
MSC2323258D
-60BS4/DS4
MSC2323258D
-70BS4/DS4
Parameter
Symbo
l
Condition
Min.
Max.
Min.
Max.
Unit
Note
Input Leakage Current
I
LI
0V
V
IN
6.5V;
All other pins not
under test = 0V
-40
40
-40
40
A
Output Leakage Current
I
LO
DQ disable
0V
V
OUT
5.5V
-20
20
-20
20
A
Output High Voltage
V
OH
I
OH
= -5.0mA
2.4
V
CC
2.4
V
CC
V
Output Low Voltage
V
OL
I
OL
= 4.2mA
0
0.4
0
0.4
V
Average Power Supply Current
(Operating)
I
CC1
/RAS, /CAS cycling,
t
RC
= Min.
-
260
-
240
mA
1, 2
/RAS, /CAS = V
IH
-
8
-
8
mA
1
Power supply current
(Standby)
I
CC2
/RAS, /CAS
V
CC
-0.2V
-
4
-
4
mA
1
Average Power Supply Current
(/RAS only refresh)
I
CC3
/RAS cycling,
/CAS = V
IH
,
t
RC
= Min.
-
260
-
240
mA
1, 2
Average Power Supply Current
(/CAS before /RAS refresh)
I
CC6
/RAS cycling,
/CAS before /RAS
-
260
-
240
mA
1, 2
Average Power Supply Current
(Fast Page Mode)
I
CC7
/RAS = V
IL
,
/CAS cycling,
t
HPC
= Min.
-
260
-
240
mA
1, 3
Notes: 1. I
CC
Max. is specified as I
CC
for output open condition.
2. Address can be changed once or less while /RAS = V
IL
.
3. Address can be changed once or less while /CAS = V
IH
.
Semiconductor
MSC2323258D
AC Characteristics (1/2)
(V
CC
= 5V 10%, Ta = 0C to +70C ) Note: 1, 2, 3
MSC2323258D
-60BS4/DS4
MSC2323258D
-70BS4/DS4
Parameter
Symbol
Min.
Max.
Min.
Max.
Unit
Note
Random Read or Write Cycle Time
t
RC
104
-
124
-
ns
Fast Page Mode Cycle Time
t
HPC
25
-
30
-
ns
Access Time from /RAS
t
RAC
-
60
-
70
ns
4, 5, 6
Access Time from /CAS
t
CAC
-
15
-
20
ns
4, 5
Access Time from Column Address
t
AA
-
30
-
35
ns
4, 6
Access Time from /CAS Precharge
t
CPA
-
35
-
40
ns
4
Output Low Impedance Time from /CAS
t
CLZ
0
-
0
-
ns
4
Data Output Hold After /CAS Low
t
DOH
5
-
5
-
ns
/CAS to Data Output Buffer Turn-off Delay Time
t
CEZ
0
15
0
20
ns
7, 8
/RAS to Data Output Buffer Turn-off Delay Time
t
REZ
0
15
0
20
ns
7, 8
/WE to Data Output Buffer Turn-off Delay Time
t
W EZ
0
15
0
20
ns
7
Transition Time
t
T
1
50
1
50
ns
3
Refresh Period
t
REF
-
16
-
16
ms
/RAS Precharge Time
t
RP
40
-
50
-
ns
/RAS Pulse Width
t
RAS
60
10K
70
10K
ns
/RAS Pulse Width (Fast Page Mode with EDO)
t
RASP
60
100K
70
100K
ns
/RAS Hold Time
t
RSH
10
-
13
-
ns
/CAS Precharge Time (Fast Page Mode with EDO)
t
CP
10
-
10
-
ns
/CAS Pulse Width
t
CAS
10
10K
13
10K
ns
/CAS Hold Time
t
CSH
40
-
45
-
ns
/CAS to /RAS Precharge Time
t
CRP
5
-
5
-
ns
/RAS Hold Time from /CAS Precharge
t
RHCP
35
-
40
-
ns
/RAS to /CAS Delay Time
t
RCD
14
45
14
50
ns
5
/RAS to Column Address Delay Time
t
RAD
12
30
12
35
ns
6
Row Address Set-up Time
t
ASR
0
-
0
-
ns
Row Address Hold Time
t
RAH
10
-
10
-
ns
Column Address Set-up Time
t
ASC
0
-
0
-
ns
Column Address Hold Time
t
CAH
10
-
13
-
ns
Column Address to /RAS Lead Time
t
RAL
30
-
35
-
ns
Read Command Set-up Time
t
RCS
0
-
0
-
ns
Read Command Hold Time
t
RCH
0
-
0
-
ns
9
Read Command Hold Time referenced to /RAS
t
RRH
0
-
0
-
ns
9
Semiconductor
MSC2323258D
AC Characteristics (2/2)
(V
CC
= 5V 10%, Ta = 0C to +70C ) Note: 1, 2, 3
MSC2323258D
-60BS4/DS4
MSC2323258D
-70BS4/DS4
Parameter
Symbol
Min.
Max.
Min.
Max.
Unit
Note
Write Command Set-up Time
t
W CS
0
-
0
-
ns
Write Command Hold Time
t
W CH
10
-
13
-
ns
Write Command Pulse Width
t
W P
10
-
10
-
ns
/WE Pulse Width (DQ Disable)
t
W PE
10
-
10
-
ns
Write Command to /RAS Lead Time
t
RW L
10
-
13
-
ns
Write Command to /CAS Lead Time
t
CW L
10
-
13
-
ns
Data-in Set-up Time
t
DS
0
-
0
-
ns
Data-in Hold Time
t
DH
10
-
13
-
ns
/CAS Active Delay Time from /RAS Precharge
t
RPC
5
-
5
-
ns
/RAS to /CAS Set-up Time
(/CAS before /RAS)
t
CSR
5
-
5
-
ns
/RAS to /CAS Hold Time
(/CAS before /RAS)
t
CHR
10
-
10
-
ns
Semiconductor
MSC2323258D
Notes: 1. A start-up delay of 200s is required after power-up, followed by a minimum of eight initialization cycles
(/RAS only refresh or /CAS before /RAS refresh) before proper device operation is achieved.
2. The AC characteristics assumes t
T
= 2ns.
3. V
IH
(Min.) and V
IL
(Max.) are reference levels for measuring input timing signals. Transition time (t
T
) are
measured between V
IH
and V
IL
.
4. This parameter is measured with a load circuit equivalent to 2TTL loads and 100pF.
5. Operation within the t
RCD
(Max.) limit ensures that t
RAC
(Max.) can be met.
t
RCD
(Max.) is specified as a reference point only. If t
RCD
is greater than the specified t
RCD
(Max.) limit, then
the access time is controlled by t
CAC
.
6. Operation within the t
RAD
(Max.) limit ensures that t
RAC
(Max.) can be met.
t
RAD
(Max.) is specified as a reference point only. If t
RAD
is greater than the specified t
RAD
(Max.) limit, then
the access time is controlled by t
AA
.
7. t
CEZ
(Max.), t
REZ
(Max.) and t
W EZ
(Max.) define the time at which the output achieves the open circuit
condition and are not referenced to output voltage levels.
8. t
CEZ
and t
REZ
must be satisfied for open circuit condition.
9. t
RCH
or t
RRH
must be satisfied for a read cycle.
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