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Semiconductor
MSM5116800C
DESCRIPTION
The MSM5116800C is a 2,097,152-word 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM5116800C achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MSM5116800C is available in a 28-pin plastic SOJ or 28-pin plastic TSOP.
FEATURES
2,097,152-word 8-bit configuration
Single 5 V power supply,
10% tolerance
Input
: TTL compatible, low input capacitance
Output : TTL compatible, 3-state
Refresh : 4096 cycles/64 ms
Fast page mode, read modify write capability
CAS before RAS refresh, hidden refresh, RAS-only refresh capability
Multi-bit test mode capability
Package options:
28-pin 400 mil plastic SOJ
(SOJ28-P-400-1.27)
(Product : MSM5116800C-xxJS)
28-pin 400 mil plastic TSOP
(TSOPII28-P-400-1.27-K) (Product : MSM5116800C-xxTS-K)
(TSOPII28-P-400-1.27-L) (Product : MSM5116800C-xxTS-L)
xx indicates speed rank.
PRODUCT FAMILY
Semiconductor
MSM5116800C
2,097,152-Word
8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5116800C-70
70 ns
130 ns
90 ns
440 mW
550 mW
Family
Access Time (Max.)
Cycle Time
(Min.)
Standby (Max.)
Power Dissipation
MSM5116800C-50
t
RAC
50 ns
35 ns
t
AA
25 ns
20 ns
t
CAC
13 ns
20 ns
t
OEA
13 ns
MSM5116800C-60
60 ns
110 ns
495 mW
30 ns
15 ns
15 ns
Operating (Max.)
5.5 mW
E2G0110-18-42
Preliminary
This version: Apr. 1998
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Semiconductor
MSM5116800C
PIN CONFIGURATION (TOP VIEW)
3
4
5
9
10
11
12
13
DQ2
DQ3
DQ4
A10R
A0
A1
A2
A3
26
25
24
20
19
18
17
16
DQ7
DQ6
DQ5
A8
A7
A6
A5
A4
2
DQ1
27 DQ8
1
V
CC
28 V
SS
28-Pin Plastic SOJ
3
4
5
9
10
11
12
13
26
25
24
20
19
18
17
16
2
27
1
28
26
25
24
20
19
18
17
16
3
4
5
9
10
11
12
13
27
2
28
1
28-Pin Plastic TSOP
(K Type)
28-Pin Plastic TSOP
(L Type)
6
WE
23
CAS
23
23
6
8
A11R
21 A9R
21
21
8
6
8
7
RAS
22
OE
22
22
7
7
14
V
CC
15 V
SS
14
15
15
14
DQ2
DQ3
DQ4
A10R
A0
A1
A2
A3
DQ1
V
CC
WE
A11R
RAS
V
CC
DQ7
DQ6
DQ5
A8
A7
A6
A5
A4
DQ8
V
SS
CAS
A9R
OE
V
SS
DQ2
DQ3
DQ4
A10R
A0
A1
A2
A3
DQ1
V
CC
WE
A11R
RAS
V
CC
DQ7
DQ6
DQ5
A8
A7
A6
A5
A4
DQ8
V
SS
CAS
A9R
OE
V
SS
Pin Name
Function
A0 - A8,
Address Input
RAS
Row Address Strobe
CAS
Column Address Strobe
DQ1 - DQ8
Data Input/Data Output
OE
Output Enable
WE
Write Enable
V
CC
Power Supply (5 V)
V
SS
Ground (0 V)
A9R - A11R
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
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Semiconductor
MSM5116800C
BLOCK DIAGRAM
Timing
Generator
Refresh
Control Clock
Column
Address
Buffers
Internal
Address
Counter
Row
Address
Buffers
Row
Deco-
ders
Word
Drivers
Memory
Cells
Sense Amplifiers
Column Decoders
I/O
Controller
I/O
Selector
Output
Buffers
Input
Buffers
On Chip
V
BB
Generator
V
CC
DQ1 - DQ8
CAS
WE
A0 - A8
9
9
8
8
8
8
8
8
12
9
OE
RAS
On Chip
IV
CC
Generator
V
SS
3
A9R - A11R
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Semiconductor
MSM5116800C
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
V
IN
, V
OUT
Symbol
I
OS
P
D
*
T
opr
T
stg
0.5 to V
CC
+ 0.5
50
1
0 to 70
55 to 150
Rating
mA
W
C
C
Parameter
V
Unit
Voltage on V
CC
Supply Relative to V
SS
V
CC
0.5 to 7
V
Recommended Operating Conditions
*: Ta = 25
C
Power Supply Voltage
Input High Voltage
Input Low Voltage
V
CC
Symbol
V
SS
V
IH
V
IL
5.0
0
--
--
Typ.
Parameter
4.5
0
2.4
0.5
*2
Min.
5.5
0
V
CC
+ 0.5
*1
0.8
Max.
(Ta = 0C to 70C)
V
Unit
V
V
V
Notes : *1. The input voltage is V
CC
+ 2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which V
CC
is applied).
*2. The input voltage is V
SS
2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which V
SS
is applied).
Capacitance
Input Capacitance
(A0 - A8, A9R - A11R)
Input Capacitance (
RAS, CAS, WE, OE)
Output Capacitance (DQ1 - DQ8)
C
IN1
Symbol
C
IN2
C
I/O
5
7
7
Max.
pF
Unit
pF
pF
Parameter
(V
CC
= 5 V 10%, Ta = 25C, f = 1 MHz)
--
--
--
Typ.
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Semiconductor
MSM5116800C
DC Characteristics
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while RAS = V
IL
.
3. The address can be changed once or less while CAS = V
IH
.
I
OH
= 5.0 mA
Output High Voltage
I
OL
= 4.2 mA
Output Low Voltage
0 V V
I
6.5 V;
All other pins not
Input Leakage Current
under test = 0 V
DQ disable
Output Leakage Current
0 V V
O
V
CC
RAS, CAS cycling,
Average Power
t
RC
= Min.
Supply Current
(Operating)
RAS, CAS = V
IH
Power Supply
RAS, CAS
Current (Standby)
RAS cycling,
Average Power
CAS = V
IH
,
Supply Current
t
RC
= Min.
(
RAS-only Refresh)
RAS = V
IH
,
Power Supply
CAS = V
IL
,
Current (Standby)
DQ = enable
Average Power
CAS before RAS
Supply Current
(
CAS before RAS Refresh)
RAS = V
IL
,
Average Power
CAS cycling,
Supply Current
t
PC
= Min.
(Fast Page Mode)
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
CC5
I
CC6
I
CC7
V
CC
0.2 V
RAS cycling,
Parameter
Condition
MSM5116800
C-50
MSM5116800
C-60
MSM5116800
C-70
(V
CC
= 5 V 10%, Ta = 0C to 70C)
Symbol
Min.
2.4
0
10
10
--
--
--
--
--
--
--
Max.
V
CC
0.4
10
10
100
2
1
100
100
100
5
Min.
2.4
0
10
10
--
--
--
--
--
--
--
Max.
V
CC
0.4
10
10
90
2
1
90
90
90
5
Min.
2.4
0
10
10
--
--
--
--
--
--
--
Max.
V
CC
0.4
10
10
80
2
1
80
80
80
5
Unit
V
V
mA
mA
mA
mA
mA
mA
mA
mA
Note
1, 2
1, 2
1, 2
1, 3
1
1
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