FEDD5117405F-01
1Semiconductor
This version: June. 2000
Previous version :
MSM5117405F
4,194,304-Word
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
1/17
DESCRIPTION
The MSM5117405F is a 4,194,304-word
4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM5117405F achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal
CMOS process. The MSM5117405F is available in a 26/24-pin plastic SOJ or 26/24-pin plastic TSOP.
FEATURES
4,194,304-word
4-bit configuration
Single 5V power supply,
10% tolerance
Input
: TTL compatible, low input capacitance
Output : TTL compatible, 3-state
Refresh : 2048 cycles/32ms
Fast page mode with EDO, read modify write capability
CAS before RAS refresh, hidden refresh, RAS-only refresh capability
Packages
26/24-pin 300mil plastic SOJ
(
SOJ26/24-P-300-1.27
)
(Product : MSM5117405F-xxSJ)
26/24-pin 300mil plastic TSOP
(
TSOPII26/24-P-300-0.80-K
)
(Product : MSM5117405F-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Power Dissipation
Family
t
RAC
t
AA
t
CAC
t
OEA
Cycle Time
(Min.)
Operating
(Max.)
Standby
(Max.)
50ns
25ns
13ns
13ns
84ns
550mW
60ns
30ns
15ns
15ns
104ns
495mW
MSM5117405F
70ns
35ns
20ns
20ns
124ns
440mW
5.5mW
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MSM5117405F
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PIN CONFIGURATION (TOP VIEW)
Pin Name
Function
A0A10
Address Input
RAS
Row Address Strobe
CAS
Column Address Strobe
DQ1DQ4
Data Input/Data Output
OE
Output Enable
WE
Write Enable
V
CC
Power Supply (5V)
V
SS
Ground (0V)
NC
No Connection
Note : The same power supply voltage must be provided to every V
CC
pin, and the same GND voltage level must
be provided to every V
SS
pin.
26/24-Pin Plastic
SOJ
26/24-Pin Plastic TSOP
(K Type)
1
2
3
4
5
6
8
9
10
11
12
13
26
25
24
23
22
21
19
18
17
16
15
14
DQ1
DQ2
V
CC
V
CC
V
SS
V
SS
A9
A8
A7
A6
A0
A1
A2
A3
WE
RAS
NC
A10
A5
A4
OE
DQ4
DQ3
CAS
1
2
3
4
5
6
8
9
10
11
12
13
26
25
24
23
22
21
19
18
17
16
15
14
DQ1
DQ2
V
CC
V
CC
V
SS
V
SS
DQ4
DQ3
A9
A8
A7
A6
A0
A1
A2
A3
WE
RAS
NC
A10
A5
A4
CAS
OE
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ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage V
CC
Supply relative to V
SS
V
T
0.5 to V
CC
+0.5
V
Short Circuit Output Current
I
OS
50
mA
Power Dissipation
P
D*
1
W
Operating Temperature
T
opr
0 to 70
C
Storage Temperature
T
stg
55 to 150
C
*: Ta = 25
C
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
V
CC
4.5
5.0
5.5
V
Power Supply Voltage
V
SS
0
0
0
V
Input High Voltage
V
IH
2.4
V
CC
+ 0.5
V
Input Low Voltage
V
IL
-
0.5
0.8
V
PIN CAPACITANCE
(Vcc = 5V
10%, Ta = 25C, f = 1 MHz)
Parameter
Symbol
Min.
Typ.
Min.
Unit
Input Capacitance (A0 A10)
C
IN1
--
--
5
pF
Input Capacitance
(
RAS
,
CAS
,
WE
,
OE
)
C
IN2
--
--
7
pF
Output Capacitance (DQ1 DQ4)
C
I/O
--
--
7
pF
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MSM5117405F
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DC CHARACTERISTICS
(V
CC
= 5V
10%, Ta = 0 to 70C)
MSM5117405
F-50
MSM5117405
F-60
MSM5117405
F-70
Parameter
Symbol
Condition
Min.
Max.
Min.
Max.
Min.
Max.
Unit Note
Output High Voltage V
OH
I
OH
=
-
5.0mA
2.4
V
CC
2.4
V
CC
2.4
V
CC
V
Output Low Voltage
V
OL
I
OL
= 4.2mA
0
0.4
0
0.4
0
0.4
V
Input Leakage
Current
I
LI
0V
V
I
6.5V;
All other pins not
under test = 0V
-
10
10
-
10
10
-
10
10
A
Output Leakage
Current
I
LO
DQ disable
0V
V
O
V
CC
-
10
10
-
10
10
-
10
10
A
Average Power
Supply Current
(Operating)
I
CC1
RAS
,
CAS
cycling,
t
RC
= Min.
100
90
80
mA
1,2
RAS
,
CAS
= V
IH
2
2
2
Power Supply
Current
(Standby)
I
CC2
RAS
,
CAS
V
CC
-
0.2V
1
1
1
mA
1
Average Power
Supply Current
(
RAS
-only Refresh)
I
CC3
RAS
cycling,
CAS
= V
IH
,
t
RC
= Min.
100
90
80
mA
1,2
Power Supply
Current
(Standby)
I
CC5
RAS
= V
IH
,
CAS
= V
IL
,
DQ = enable
5
5
5
mA
1
Average Power
Supply Current
(
CAS
before
RAS
Refresh)
I
CC6
RAS
= cycling,
CAS
before
RAS
100
90
80
mA
1,2
Average Power
Supply Current
(Fast Page Mode)
I
CC7
RAS
= V
IL
,
CAS
cycling,
t
HPC
= Min.
100
90
80
mA
1,3
Notes: 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS = V
IL
.
3. The address can be changed once or less while
CAS = V
IH
.
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