Internal Circuit
Terminal No.
Name
A
Anode
K
Cathode
C
Collector
E
Emitter
K
A
C
E
Four, 0.45
Four, 0.45
6 min.
Cross section AA
Cross section BB
Dimensions
Tolerance
3 mm max.
0.3
3 < mm 6
0.375
6 < mm 10
0.45
10 < mm 18
0.55
18 < mm 30
0.65
Unless otherwise specified, the
tolerances are as shown below.
7.20.2
2.540.2
6.50.2
Photomicrosensor
(Transmissive)
EE-SJ3W-B
Dimensions
Note: All units are in millimeters unless otherwise indicated.
Features
General-purpose model with a 3-mm-wide slot.
PCB mounting type.
With a red LED as an emitter element and a
Photo-Darlington transistor as a detector element.
Absolute Maximum Ratings
(Ta = 25C)
Item
Symbol
Rated
value
Emitter
Forward current
I
F
15 mA
(see note 1)
Pulse forward
current
I
FP
---
Reverse voltage
V
R
4 V
Detector
Collector--Emitter
voltage
V
CEO
24 V
Emitter--Collector
voltage
V
ECO
---
Collector current
I
C
20 mA
Collector
dissipation
P
C
75 mW
(see note 1)
Ambient
temperature
Operating
Topr
--20C to
60C
Storage
Tstg
--20C to
80C
Soldering temperature
Tsol
260C
(see note 3)
Note: 1. Refer to the temperature rating chart if the ambient
temperature exceeds 25C.
2. The pulse width is 10 s maximum with a frequency
of 100 Hz.
3. Complete soldering within 10 seconds.
Ordering Information
Description
Part number
Photomicrosensor (Transmissive)
EE-SJ3W-B
Electrical and Optical Characteristics (Ta = 25C)
Item
Symbol
Value
Condition
Emitter
Forward voltage
V
F
2.0 V typ., 2.6 V max.
I
F
= 15 mA
Reverse current
I
R
0.01 A typ., 5 A max.
V
R
= 4 V
Peak emission wavelength
P
700 nm typ.
I
F
= 3 mA
Detector
Light current
I
L
1.5 mA min., 120 mA max.
I
F
= 3 mA, V
CE
= 10 V
Dark current
I
D
20 nA typ., 250 nA max.
V
CE
= 10 V, 0 x
Leakage current
I
LEAK
---
---
Collector--Emitter saturated
voltage
V
CE
(sat)
0.9 V typ.
I
F
= 3 mA, I
L
= 0.5 mA
Peak spectral sensitivity
wavelength
P
800 nm typ.
V
CE
= 10 V
Rising time
tr
180 s typ.
V
CC
= 5 V, R
L
= 100 ,
I
L
= 10 mA
Falling time
tf
60 s typ.
V
CC
= 5 V, R
L
= 100 ,
I
L
= 10 mA
EE-SJ3W-B
EE-SJ3W-B
Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Forward Current vs. Forward
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Ambient temperature Ta (C)
Collector
dissipation
Pc
(mW)
Forward voltage V
F
(V)
F
Forward
current
I
(mA)
F
Forward
current
I
(mA)
Forward current I
F
(mA)
Light
current
I
(mA)
L
Light Current vs. Collector--Emitter
Voltage Characteristics (Typical)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Collector--Emitter voltage V
CE
(V)
Light
current
I
(mA)
L
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Response Time vs. Load
Resistance Characteristics
(Typical)
Load resistance R
L
(k)
Distance d (mm)
V
CE
= 10 V
0 x
V
CC
= 5 V
Ta = 25C
Ta = 25C
V
CE
= 10 V
I
F
=10 mA
I
F
= 7 mA
I
F
= 5 mA
I
F
= 3 mA
I
F
= 2 mA
Ta = 25C
Ta = 25C
I
F
= 1 mA
I
F
= 3 mA
V
CE
= 10 V
I
F
=3 mA
V
CE
= 10 V
Ta = 25C
90 %
10 %
Center of optical axis
Input
Output
Output
Input
Response
t
ime
t
r
,
tf
(
s)
Relative
light
current
I
(
%)
L
Dark
current
I
(
nA)
D
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Relative
light
current
I
(
%)
L
I
F
Pc
Cat. No.
GC NAPMS1
02/03 Specifications subject to change without notice. Printed in U.S.A.
OMRON ELECTRONICS LLC
One East Commerce Drive
Schaumburg, IL 60173
NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4.
8478822288
OMRON CANADA, INC.
885 Milner Avenue
416-286-6465
R
OMRON ONLINE
Global http://www.omron.com
USA http://www.omron.com/oei
Canada http://www.omron.com/oci
Toronto, Ontario M1B 5V8
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