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Электронный компонент: EE-SK3W-B

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Internal Circuit
Terminal No.
Name
A
Anode
K
Cathode
C
Collector
E
Emitter
K
A
C
E
Dimensions
Tolerance
3 mm max.
0.3
3 < mm 6
0.375
6 < mm 10
0.45
10 < mm 18
0.55
18 < mm 30
0.65
Unless otherwise specified, the
tolerances are as shown below.
Four,
0.45
6 min.
Four, 0.45
3.2 dia. hole
Cross section AA
Cross section BB
7.20.2
2.540.2
18.8
15.8
0.8
0.8
0.8
0.8
Photomicrosensor
(Transmissive)
EE-SK3W-B
Dimensions
Note: All units are in millimeters unless otherwise indicated.
Features
General-purpose model with a 3-mm-wide slot.
PCB mounting type.
With a red LED as an emitter element and a
Photo-Darlington transistor as a detector element.
Absolute Maximum Ratings
(Ta = 25C)
Item
Symbol
Rated
value
Emitter
Forward current
I
F
15 mA
(see note 1)
Pulse forward
current
I
FP
---
Reverse voltage
V
R
4 V
Detector
Collector--Emitter
voltage
V
CEO
24 V
Emitter--Collector
voltage
V
ECO
---
Collector current
I
C
20 mA
Collector
dissipation
P
C
75 mW
(see note 1)
Ambient
temperature
Operating
Topr
--20C to
60C
Storage
Tstg
--20C to
80C
Soldering temperature
Tsol
260C
(see note 2)
Note: 1. Refer to the temperature rating chart if the ambient
temperature exceeds 25C.
2. Complete soldering within 10 seconds.
Ordering Information
Description
Part number
Photomicrosensor (Transmissive)
EE-SK3W-B
Electrical and Optical Characteristics (Ta = 25C)
Item
Symbol
Value
Condition
Emitter
Forward voltage
V
F
2.0 V typ., 2.6 V max.
I
F
= 15 mA
Reverse current
I
R
0.01 A typ., 5 A max.
V
R
= 4 V
Peak emission wavelength
P
700 nm typ.
I
F
= 3 mA
Detector
Light current
I
L
1.5 mA min., 120 mA max.
I
F
= 3 mA, V
CE
= 10 V
Dark current
I
D
2 nA typ., 250 nA max.
V
CE
= 10 V, 0 x
Leakage current
I
LEAK
---
---
Collector--Emitter saturated
voltage
V
CE
(sat)
0.9 V typ.
I
F
= 3 mA, I
L
= 0.5 mA
Peak spectral sensitivity
wavelength
P
800 nm typ.
V
CE
= 10 V
Rising time
tr
180 s typ.
V
CC
= 5 V, R
L
= 100 ,
I
L
= 10 mA
Falling time
tf
60 s typ.
V
CC
= 5 V, R
L
= 100 ,
I
L
= 10 mA
EE-SK3W-B
EE-SK3W-B
Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Forward Current vs. Forward
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Ambient temperature Ta (C)
Collector
dissipation
P
c
(mW)
Forward voltage V
F
(V)
F
Forward
current
I
(mA)
F
Forward
current
I
(mA)
Forward current I
F
(mA)
Light
current
I
(mA)
L
Light Current vs. Collector--Emitter
Voltage Characteristics (Typical)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Collector--Emitter voltage V
CE
(V)
Light
current
I
(mA)
L
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Response Time vs. Load Resis-
tance Characteristics (Typical)
Load resistance R
L
(k)
Distance d (mm)
V
CE
= 10 V
0 x
V
CC
= 5 V
Ta = 25C
Ta = 25C
V
CE
= 10 V
I
F
=10 mA
I
F
= 7 mA
I
F
= 5 mA
I
F
= 3 mA
I
F
= 2 mA
Ta = 25C
Ta = 25C
I
F
= 1 mA
I
F
= 3 mA
V
CE
= 10 V
I
F
= 3 mA
V
CE
= 10 V
Ta = 25C
90 %
10 %
Center of optical axis
Input
Output
Output
Input
Response
t
ime
t
r
,
tf
(
s)
Relative
light
current
I
(
%)
L
Dark
current
I
(
nA)
D
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Relative
light
current
I
(
%)
L
I
F
Pc
Cat. No.
GC NAPMS1
02/03 Specifications subject to change without notice. Printed in U.S.A.
OMRON ELECTRONICS LLC
One East Commerce Drive
Schaumburg, IL 60173
NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4.
8478822288
OMRON CANADA, INC.
885 Milner Avenue
416-286-6465
R
OMRON ONLINE
Global http://www.omron.com
USA http://www.omron.com/oei
Canada http://www.omron.com/oci
Toronto, Ontario M1B 5V8