86
EE-SX1103
Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SX1103
Dimensions
Note: All units are in millimeters unless otherwise indicated.
Features
Ultra-compact with a sensor width of 5 mm and a slot width of
2 mm.
PCB mounting type.
High resolution with a 0.4-mm-wide aperture.
Absolute Maximum Ratings (Ta = 25
C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25
C.
2. Complete soldering within 3 seconds.
Electrical and Optical Characteristics (Ta = 25
C)
Internal Circuit
Four, 0.5
Four, 0.2
Two, C0.3
Optical
axis
Gate
dia.
Two, C0.5
5 min.
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Unless otherwise specified, the
tolerances are
0.2 mm.
Item
Symbol
Rated value
Emitter
Forward current
I
F
50 mA
(see note 1)
Pulse forward cur-
rent
I
FP
---
Reverse voltage
V
R
5 V
Detector
CollectorEmitter
voltage
V
CEO
30 V
EmitterCollector
voltage
V
ECO
4.5 V
Collector current
I
C
30 mA
Collector dissipa-
tion
P
C
80 mW
(see note 1)
Ambient tem-
perature
Operating
Topr
25
C to 85
C
Storage
Tstg
30
C to 100
C
Soldering temperature
Tsol
260
C
(see note 2)
Item
Symbol
Value
Condition
Emitter
Forward voltage
V
F
1.3 V typ., 1.6 V max.
I
F
= 50 mA
Reverse current
I
R
10
m
A max.
V
R
= 5 V
Peak emission wavelength
l
P
950 nm typ.
I
F
= 50 mA
Detector
Light current
I
L
0.5 mA min.
I
F
= 20 mA, V
CE
= 5 V
Dark current
I
D
500 nA max.
V
CE
= 10 V, 0
l
x
Leakage current
I
LEAK
---
---
CollectorEmitter saturated volt-
age
V
CE
(sat)
0.4 V max.
I
F
= 20 mA, I
L
= 0.3 mA
Peak spectral sensitivity wave-
length
l
P
800 nm typ.
V
CE
= 5 V
Rising time
tr
10
m
s typ.
V
CC
= 5 V, R
L
= 100
W
,
I
F
= 20 mA
Falling time
tf
10
m
s typ.
V
CC
= 5 V, R
L
= 100
W
,
I
F
= 20 mA
EE-SX1103
Photomicrosensor (Transmissive)
87
Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Forward Current vs. Forward
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector-Emitter
Voltage Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
Response Time Measurement Circuit
Input
Output
Input
Output
90 %
10 %
Response Time vs. Light Current
Characteristics (Typical)
Sensing Position Characteristics
(Typical)
V
CE
= 30 V
V
CE
= 20 V
V
CE
= 10 V
Ambient temperature Ta (
C)
Collector dissipation P
C
(mW)
Forward voltage V
F
(V)
F
orw
ard current I
F
(mA)
F
orw
ard current I
F
(mA)
Forward current I
F
(mA)
Light current I
L
(mA)
Collector-Emitter voltage V
CE
(V)
Light current I
L
(mA)
Ambient temperature Ta (
C)
Light current I
t
(mA)
Ta = 25
C
V
CE
= 5 V
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25
C
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 5 V
Ta = 25
C
V
CC
= 5 V
Ta = 25
C
Response time tr
, tf (
s)
Relativ
e light current I
L
(%)
Dar
k current I
D
(nA)
Relativ
e light current I
L
(%)
I
F
= 50 mA
Ambient temperature Ta (
C)
Distance d (mm)
I
F
= 20 mA
V
CE
= 5 V
Ta = 25
C
Relativ
e light current I
L
(%)
Distance d (mm)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
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