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EE-SY110/113/171
Compact Reflective Phototransistor
Output
Low-profiled model with an overall
height of only 3 mm (EE-SY171)
Models with a circuit integrated into
molded housing provide special cost
advantages (EE-SY110/113)
Model with a filter reduces effects of
external visible light (EE-SY113)
Ordering Information
Appearance
Sensing method
Sensing
distance
Sensing object
Output
configuration
Weight
Part number
Reflective
3.5 mm
White paper with
reflection factor
of 90%
Phototransistor
0.3 g
EE-SY171
4.4 mm
of 90%
Approx. 0.5 g
EE-SY113
5 mm
Approx. 0.4 g
EE-SY110
Specifications
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Item
Symbol
Rated value
Input
Forward current
I
F
50 mA*
Pulse forward current
I
FP
1 A**
Reverse voltage
V
R
4 V
Output
Collector-emitter voltage
V
CEO
30 V
Collector current
I
C
20 mA
Collector dissipation
P
C
100 mW*
Ambient temperature
Operating
Topr
-40
C to 85
C (-40
F to 185
F)
Storage
Tstg
-40
C to 85
C (-40
F to 185
F)
*Refer to Engineering Data if the ambient temperature is not within the normal room temperature range.
**This value was measured with a pulse width of 10
s and a repeating frequency of 100 Hz.
EE-SY110/113/171
EE-SY110/113/171
CHARACTERISTICS (T
A
= 25
C)
Item
Symbol
EE-SY110
EE-SY171
EE-SY113
Value
Condition
Value
Condition
Value
Condition
Emitter
Forward
voltage
V
F
1.5 V max.
I
F
= 30 mA
1.5 V max.
I
F
= 30 mA
1.5 V max.
I
F
= 30 mA
Reverse
current
I
R
10
A max.
V
R
= 4 V
10
A max.
V
R
= 4 V
10
A max.
V
R
= 4 V
Peak emission
wavelength
p(L)
940 nm typ.
I
F
= 20 mA
940 nm typ.
I
F
= 20 mA
940 nm typ.
I
F
= 20 mA
Receiver
Dark current
I
D
200 nA max.
V
CE
= 10 V
0
lx
200 nA max.
V
CE
= 10 V
0
lx
200 nA max.
V
CE
= 10 V
0
lx
Peak spectral
sensitivity
wavelength
p(P)
850 nm typ.
V
CE
= 10 V
850 nm typ.
V
CE
= 10 V
850 nm typ.
V
CE
= 10 V
Combination
Light current
I
L
200 to
2,000
A
I
F
= 20 mA
V
CE
= 10 V
White paper
with a
reflection
factor of
90% at a
distance of
5 mm
50 to 500
A
I
F
= 20 mA
V
CE
= 10 V
White paper
with a
reflection
factor of
90% at a
distance of
3.5 mm
160 to
1,600
A
I
F
= 20 mA
V
CE
= 10 V
White paper
with a
reflection
factor of
90% at a
distance of
4.4 mm
Leakage
current
I
LEAK
2
A max.
I
F
= 20 mA
V
CE
= 10 V*
200 nA max.
I
F
= 20 mA
V
CE
= 10 V*
2
A max.
I
F
= 20 mA
V
CE
= 10 V*
Rising time**
tr
30
s typ.
V
CC
= 5 V
R
L
= 1 k
30
s typ.
V
CC
= 5 V
R
L
= 1 k
30
s typ.
V
CC
= 5 V
R
L
= 1 k
Falling time**
tf
30
s typ.
R
L
= 1 k
I
L
= 1 mA
30
s typ.
R
L
= 1 k
I
L
= 1 mA
30
s typ.
R
L
= 1 k
I
L
= 1 mA
*The sensing object reflects no light.
**The following illustrations show the rising time, tr, and the falling time, tf.
Input
V
CC
Output
R
L
0
0
Input
t
Output
t
tr
90%
10%
tf
Sensing object
Engineering Data
Note: The operating conditions of the photomicrosensor must be within the absolute maximum rating ranges.
TEMPERATURE CHARACTERISTICS
INPUT CHARACTERISTICS (TYPICAL)
Ambient temperature T
A
(
C)
F
Forward
c
urrent
I
(
m
A
)
I
F
, P
c
Forward voltage V
F
(V)
F
Forward
c
urrent
I
(
m
A
)
T
A
= --30
C
T
A
= +25
C
T
A
= +70
C
Col
l
e
c
t
or
di
s
s
i
pat
i
o
n
P
C
(m
W)
EE-SY110/113/171
EE-SY110/113/171
INPUT/OUTPUT CHARACTERISTICS (TYPICAL)
EE-SY110
Forward current I
F
(mA)
Li
ght
c
u
rrent
I
(
A
)
L
EE-SY171
Li
ght
c
u
rrent
I
(
A
)
L
Forward current I
F
(mA)
T
A
= 25
C
V
CE
= 10 V
Sensing object: Paper with
a reflection factor of 90%
Sensing distance: 5 mm
Sensing object: White paper
with a reflection factor of 90%
Sensing distance: 5 mm
V
CE
= 10 V
OUTPUT CHARACTERISTICS (TYPICAL)
EE-SY110
EE-SY171
Li
ght
c
u
rrent
I
(
m
A
)
L
Collector-emitter voltage V
CE
(V)
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
White paper (reflection
factor: 90%)
Sensing distance:5 mm
I
F
= 40 mA
Collector-emitter voltage V
CE
(V)
Li
ght
c
u
rrent
I
(
A
)
L
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
=10 mA
Sensing object: Paper with
a reflection factor of 90%
Sensing distance: 3.5 mm
T
A
= 25
C
LIGHT CURRENT TEMPERATURE DEPENDENCY (TYPICAL)
EE-SY110/113
EE-SY171
Rel
a
t
i
v
e
l
i
ght
c
u
rrent
I
(
%
)
L
Ambient temperature T
A
(
C)
Based on the I
L
value
at 25
C as 100%.
Sensing object: White
paper with a reflection
factor of 90%
Rel
a
t
i
v
e
l
i
ght
c
u
rrent
I
(
%
)
L
Ambient temperature T
A
(
C)
Sensing object: Paper with a reflection
factor of 90%
I
F
= 20 mA
V
CE
= 10 V
Sending distance: 3.5 mm
I
F
= 20 mA
V
CE
= 10 V
Sending distance: 5 mm
EE-SY110/113/171
EE-SY110/113/171
LEAKAGE CURRENT
CHARACTERISTICS (TYPICAL)
EE-SY171
Current
l
eak
age
I
(
nA
)
L
EAK
Forward current I
F
(mA)
Sensing object: Object with no
light reflection
Sensing distance: Infinite
T
A
= 25
C
V
CE
= 10 V
SENSING DISTANCE
CHARACTERISTICS 2 (TYPICAL)
EE-SY171
Li
ght
c
u
rrent
I
(
A
)
L
Distance d (mm)
(a)
(b)
(c)
(d)
(e)
(f)
T
A
= 25
C
I
F
= 20 mA
V
CE
= 10 V
a: Aluminum
b: White paper with a
reflection factor of 90%
c: Pink paper
d: OHP
e: Tracing paper
f: Black sponge
EE-SY110
Rel
a
t
i
v
e
l
i
ght
c
u
rrent
I
(
%
)
L
Distance d
2
(mm)
T
A
= 25
C
I
F
= 20 mA
V
CE
= 10 V
Moving
direction
d
1
= 3 mm
d
1
= 5 mm
d
1
d
2
SENSING DISTANCE
CHARACTERISTICS 1 (TYPICAL)
EE-SY110
Distance d (mm)
Li
ght
c
u
rrent
I
(
A
)
L
(b)
(c)
(d)
(a)
(a): 15 x 15 mm
2
(b): 10 x 10 mm
2
(c): 5 x 5 mm
2
(d): 2 x 2 mm
2
Sensing object: White paper with a
reflection factor of 90%
T
A
= 25
C
I
F
= 20 mA
V
CE
= 10 V
SENSING DISTANCE
CHARACTERISTICS (TYPICAL)
EE-SY171
Distance d (mm)
Li
ght
c
u
rrent
I
(
A
)
L
T
A
= 25
C
I
F
= 20 mA
V
CE
= 10 V
Paper with a
reflection factor
of 90%
Tracing paper
OHP sheet
Black paper
d
EE-SY171
Rel
a
t
i
v
e
l
i
ght
c
u
rrent
I
(
%
)
L
Distance d
2
(mm)
T
A
= 25
C
I
F
= 20 mA
V
CE
= 10 V
Sensing object: Paper with
a reflection factor of 90%
d
1
d
2
d
1
= 3 mm
d
1
= 4 mm
d
1
= 5 mm
EE-SY110/113/171
EE-SY110/113/171
SWITCHING CHARACTERISTICS (RISE TIME, TYPICAL)
EE-SY110/113
Light current I
L
(
A)
R
L
= 1 k
R
L
= 470
R
L
=100
d
90%
10%
t
tf
0
0
Input
Output
Input
I
L
R
L
Vcc
OUT
T
A
= 25
C
V
CE
= 10 V
R
L
= 4.7 k
R
i
sin
g
time
tr
(
s
)
EE-SY171
R
i
sin
g
time
tr
(
s
)
Light current I
L
(
A)
R
L
= 4.7 k
R
L
= 1 k
R
L
= 470
R
L
= 100
T
A
= 25
C
V
CE
= 10 V
Sensing distance:
3.5 mm
Sensing object: Paper
with a reflection factor
of 90%
SWITCHING CHARACTERISTICS (FALL TIME, TYPICAL)
EE-SY110/113
Fa
llin
g
t
ime
t
f
(
s)
Light current I
L
(
A)
d
90%
10%
t
0
tr
0
t
R
L
= 4.7 k
R
L
= 1 k
R
L
= 470
R
L
= 100
Input
Output
Input
I
L
Vcc
OUT
T
A
= 25
C
V
CE
= 10 V
EE-SY171
Light current I
L
(
A)
Fa
llin
g
t
ime
t
f
(
s)
R
L
= 4.7 k
R
L
= 1 k
R
L
= 470
R
L
= 100
Sensing distance: 3.5 mm
Sensing object: Paper with
a reflection factor of 90%
T
A
= 25
C
V
CE
= 10 V
SENSING ANGLE CHARACTERISTICS (TYPICAL)
EE-SY110
Rel
a
t
i
v
e
l
i
ght
c
u
rrent
I
(
%
)
L
V
CE
= 10 V
I
F
= 20 mA
Sensing object:
White paper with a
reflection factor of
90%
d
0
Sensing distance: 5 mm
Angle deviation
(
)
+
-
EE-SY171
d
T
A
= 2 5
C
I
F
= 20 mA
V
CE
= 10 V
Sensing object:
Paper with a reflection
factor of 90%
0
Rel
a
t
i
v
e
l
i
ght
c
u
rrent
I
(
%
)
L
Angle deviation
(
)
+
-
Sensing distance: 5 mm
Document Outline
- Front Page
- Ordering Information
- Specifications
- Engineering Data
- Dimensions
- Precautions
- Contacting Omron
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