Semiconductor Components Industries, LLC, 2002
June, 2002 Rev. 5
1
Publication Order Number:
1N6267A/D
1N6267A Series
1500 Watt Mosorb
TM
Zener
Transient Voltage
Suppressors
Unidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, highenergy transients. They have
excellent clamping capability, high surge capability, low zener
i m p e d a n c e a n d f a s t r e s p o n s e t i m e . T h e s e d e v i c e s a r e
ON Semiconductor's exclusive, cost-effective, highly reliable
Surmetic
TM
axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Specification Features:
Working Peak Reverse Voltage Range 5.8 V to 214 V
Peak Power 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
mA Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230
C, 1/16
from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
@ T
L
25
C
P
PK
1500
Watts
Steady State Power Dissipation
@ T
L
75
C, Lead Length = 3/8
Derated above T
L
= 75
C
P
D
5.0
20
Watts
mW/
C
Thermal Resistance, JunctiontoLead
R
q
JL
20
C/W
Forward Surge Current (Note 2)
@ T
A
= 25
C
I
FSM
200
Amps
Operating and Storage
Temperature Range
T
J
, T
stg
65 to
+175
C
1. Nonrepetitive current pulse per Figure 5 and derated above T
A
= 25
C per
Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses
per minute maximum.
*Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices
Devices listed in
bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
AXIAL LEAD
CASE 41A
PLASTIC
L = Assembly Location
1N6xxxA = JEDEC Device Code
1.5KExxxA = ON Device Code
YY = Year
WW = Work Week
Cathode
Anode
Device
Package
Shipping
ORDERING INFORMATION
1.5KExxxA
Axial Lead
500 Units/Box
1.5KExxxARL4
Axial Lead
1500/Tape & Reel
1N6xxxA
Axial Lead
500 Units/Box
1N6xxxARL4*
Axial Lead
1500/Tape & Reel
L
1N6
xxxA
1.5KE
xxxA
YYWW
http://onsemi.com
*1N6302A Not Available in 1500/Tape & Reel
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1N6267A Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless
otherwise noted, V
F
= 3.5 V Max., I
F
(Note 3) = 100 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
Q
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
1N6267A Series
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3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3)
= 100 A)
V
RWM
Breakdown Voltage
V
C
@ I
PP
(Note 7)
JEDEC
Device
V
RWM
(Note 5)
I
R
@ V
RWM
V
BR
(Note 6) (Volts)
@ I
T
V
C
I
PP
Q
V
BR
Device
Device
(Note 4)
(Volts)
(
m
A)
Min
Nom
Max
(mA)
(Volts)
(A)
(%/
C)
1.5KE6.8A
1N6267A
5.8
1000
6.45
6.8
7.14
10
10.5
143
0.057
1.5KE7.5A
1N6268A
6.4
500
7.13
7.5
7.88
10
11.3
132
0.061
1.5KE8.2A
1N6269A
7.02
200
7.79
8.2
8.61
10
12.1
124
0.065
1.5KE9.1A
1N6270A
7.78
50
8.65
9.1
9.55
1
13.4
112
0.068
1.5KE10A
1N6271A
8.55
10
9.5
10
10.5
1
14.5
103
0.073
1.5KE11A
1N6272A
9.4
5
10.5
11
11.6
1
15.6
96
0.075
1.5KE12A
1N6273A
10.2
5
11.4
12
12.6
1
16.7
90
0.078
1.5KE13A
1N6274A
11.1
5
12.4
13
13.7
1
18.2
82
0.081
1.5KE15A
1N6275A
12.8
5
14.3
15
15.8
1
21.2
71
0.084
1.5KE16A
1N6276A
13.6
5
15.2
16
16.8
1
22.5
67
0.086
1.5KE18A
1N6277A
15.3
5
17.1
18
18.9
1
25.2
59.5
0.088
1.5KE20A
1N6278A
17.1
5
19
20
21
1
27.7
54
0.09
1.5KE22A
1N6279A
18.8
5
20.9
22
23.1
1
30.6
49
0.092
1.5KE24A
1N6280A
20.5
5
22.8
24
25.2
1
33.2
45
0.094
1.5KE27A
1N6281A
23.1
5
25.7
27
28.4
1
37.5
40
0.096
1.5KE30A
1N6282A
25.6
5
28.5
30
31.5
1
41.4
36
0.097
1.5KE33A
1N6283A
28.2
5
31.4
33
34.7
1
45.7
33
0.098
1.5KE36A
1N6284A
30.8
5
34.2
36
37.8
1
49.9
30
0.099
1.5KE39A
1N6285A
33.3
5
37.1
39
41
1
53.9
28
0.1
1.5KE43A
1N6286A
36.8
5
40.9
43
45.2
1
59.3
25.3
0.101
1.5KE47A
1N6287A
40.2
5
44.7
47
49.4
1
64.8
23.2
0.101
1.5KE51A
1N6288A
43.6
5
48.5
51
53.6
1
70.1
21.4
0.102
1.5KE56A
1N6289
47.8
5
53.2
56
58.8
1
77
19.5
0.103
1.5KE62A
1N6290A
53
5
58.9
62
65.1
1
85
17.7
0.104
1.5KE68A
1N6291A
58.1
5
64.6
68
71.4
1
92
16.3
0.104
1.5KE75A
1N6292A
64.1
5
71.3
75
78.8
1
103
14.6
0.105
1.5KE82A
1N6293A
70.1
5
77.9
82
86.1
1
113
13.3
0.105
1.5KE91A
1N6294A
77.8
5
86.5
91
95.5
1
125
12
0.106
1.5KE100A
1N6295A
85.5
5
95
100
105
1
137
11
0.106
1.5KE110A
1N6296A
94
5
105
110
116
1
152
9.9
0.107
1.5KE120A
1N6297A
102
5
114
120
126
1
165
9.1
0.107
1.5KE130A
1N6298A
111
5
124
130
137
1
179
8.4
0.107
1.5KE150A
1N6299A
128
5
143
150
158
1
207
7.2
0.108
1.5KE160A
1N6300A
136
5
152
160
168
1
219
6.8
0.108
1.5KE170A
1N6301A
145
5
162
170
179
1
234
6.4
0.108
1.5KE180A
1N6302A*
154
5
171
180
189
1
246
6.1
0.108
1.5KE200A
1N6303A
171
5
190
200
210
1
274
5.5
0.108
1.5KE220A
185
5
209
220
231
1
328
4.6
0.109
1.5KE250A
214
5
237
250
263
1
344
5
0.109
3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
4. Indicates JEDEC registered data
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to or
greater than the dc or continuous peak operating voltage level.
6. V
BR
measured at pulse test current I
T
at an ambient temperature of 25
C
7. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
*Not Available in the 1500/Tape & Reel
1N6267A Series
http://onsemi.com
4
Figure 1. Pulse Rating Curve
100
80
60
40
20
0
0
25
50
75
100 125 150 175
200
PEAK PULSE DERA
TING IN % OF
PEAK POWER OR CURRENT
@
T A
= 25
C
T
A
, AMBIENT TEMPERATURE (
C)
Figure 2. Pulse Derating Curve
5
4
3
2
1
25
50
75
100
125
150
175
200
P D
, STEADY
ST
A
TE POWER DISSIP
A
TION (W
A
TTS)
T
L
, LEAD TEMPERATURE (
C)
3/8
3/8
0
0
100
50
0
0
1
2
3
4
t, TIME (ms)
, V
ALUE (%)
t
r
t
P
PEAK VALUE - I
PP
HALF VALUE -
I
PP
2
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
tr
10 ms
1 ms
10 ms
100 ms
1 ms
10 ms
100
10
1
t
P
, PULSE WIDTH
P PK
, PEAK POWER (kW)
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
0.1 ms
I PP
Figure 3. Capacitance versus Breakdown Voltage
1N6267A/1.5KE6.8A
through
1N6303A/1.5KE200A
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
1
10
100
1000
10,000
1000
100
10
C, CAP
ACIT
ANCE (pF)
MEASURED @ V
RWM
MEASURED @
ZERO BIAS
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
1
10
100
1000
10,000
1000
100
10
C, CAP
ACIT
ANCE (pF)
MEASURED @
ZERO BIAS
MEASURED @ V
RWM
1N6267A Series
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5
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
1.5KE6.8CA
through
1.5KE200CA
Figure 6. Dynamic Impedance
1000
500
200
100
50
20
10
5
2
1
1000
500
200
100
50
20
10
5
2
1
0.3
0.5 0.7 1
2
3
5
7 10
20 30
DV
BR
, INSTANTANEOUS INCREASE IN V
BR
ABOVE V
BR(NOM)
(VOLTS)
0.3
0.5 0.7 1
2
3
5
7 10
20 30
DV
BR
, INSTANTANEOUS INCREASE IN V
BR
ABOVE V
BR(NOM)
(VOLTS)
I T
,
TEST
CURRENT
(AMPS)
V
BR(NOM)
= 6.8 to 13 V
T
L
= 25
C
t
P
= 10 ms
V
BR(NOM)
= 6.8 to 13 V
20 V
24 V
43 V
75 V
180 V
120 V
20 V
24 V
43 V
Figure 7. Typical Derating Factor for Duty Cycle
DERA
TING F
ACT
OR
1 ms
10 ms
1
0.7
0.5
0.3
0.05
0.1
0.2
0.01
0.02
0.03
0.07
100 ms
0.1
0.2
0.5
2
5
10
50
1
20
100
D, DUTY CYCLE (%)
PULSE WIDTH
10 ms
T
L
= 25
C
t
P
= 10 ms
I T
,
TEST
CURRENT
(AMPS)
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25
C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
1N6267A Series
http://onsemi.com
6
ambient temperature rises above 25
C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10
ms pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
TYPICAL PROTECTION CIRCUIT
V
in
V
L
V
V
in
V
in
(TRANSIENT)
V
L
t
d
V
V
L
V
in
(TRANSIENT)
Z
in
LOAD
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 8.
Figure 9.
UL RECOGNITION*
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric Voltage-
Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
*Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA
CLIPPER BIDIRECTIONAL DEVICES
1. Clipper-bidirectional devices are available in the
1.5KEXXA series and are designated with a "CA"
suffix; for example, 1.5KE18CA. Contact your nearest
ON Semiconductor representative.
2. Clipper-bidirectional part numbers are tested in both
directions to electrical parameters in preceding table
(except for V
F
which does not apply).
3. The 1N6267A through 1N6303A series are JEDEC
registered devices and the registration does not include
a "CA" suffix. To order clipper-bidirectional devices
one must add CA to the 1.5KE device title.
1N6267A Series
http://onsemi.com
7
OUTLINE DIMENSIONS
1500 Watt Mosorb
Transient Voltage Suppressors Axial Leaded
MOSORB
CASE 41A04
ISSUE D
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.335
0.374
8.50
9.50
INCHES
B
0.189
0.209
4.80
5.30
D
0.038
0.042
0.96
1.06
K
1.000
---
25.40
---
P
---
0.050
---
1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD FINISH AND DIAMETER UNCONTROLLED
IN DIMENSION P.
4. 041A-01 THRU 041A-03 OBSOLETE, NEW
STANDARD 041A-04.
D
K
P
P
A
K
B
1N6267A Series
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8
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be
validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
1N6267A/D
Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
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