Semiconductor Components Industries, LLC, 2003
April, 2003 - Rev. 5
1
Publication Order Number:
1N5820/D
1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low-voltage, high-frequency inverters, free wheeling diodes, and
polarity protection diodes.
Extremely Low V
F
Low Power Loss/High Efficiency
Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
220
C Max. for 10 Seconds, 1/16
from case
Shipped in plastic bags, 500 per bag
Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to
the part number
Polarity: Cathode indicated by Polarity Band
Marking: 1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
Please See the Table on the Following Page
Device
Package
Shipping
ORDERING INFORMATION
AXIAL LEAD
CASE 267-05
(DO-201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
1N5820
Axial Lead
500 Units/Bag
1N5820RL
Axial Lead
1500/Tape & Reel
1N5821
Axial Lead
500 Units/Bag
1N5821RL
Axial Lead
1500/Tape & Reel
1N5822
Axial Lead
500 Units/Bag
1N5822RL
Axial Lead
1500/Tape & Reel
MARKING DIAGRAM
1N
582x
1N582x = Device Code
x
= 0, 1 or 2
http://onsemi.com
1N5820, 1N5821, 1N5822
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
1N5820
1N5821
1N5822
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20
30
40
V
Non-Repetitive Peak Reverse Voltage
V
RSM
24
36
48
V
RMS Reverse Voltage
V
R(RMS)
14
21
28
V
Average Rectified Forward Current (Note 1)
V
R(equiv)
v
0.2 V
R(dc)
, T
L
= 95
C
(R
JA
= 28
C/W, P.C. Board Mounting, see Note 5)
I
O
3.0
A
Ambient Temperature
Rated V
R(dc)
, P
F(AV)
= 0
R
JA
= 28
C/W
T
A
90
85
80
C
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, T
L
= 75
C)
I
FSM
80 (for one cycle)
A
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
T
J
, T
stg
*
65 to +125
C
Peak Operating Junction Temperature (Forward Current applied)
T
J(pk)
150
C
*THERMAL CHARACTERISTICS
(Note 5)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
JA
28
C/W
*ELECTRICAL CHARACTERISTICS
(T
L
= 25
C unless otherwise noted) (Note 1)
Characteristic
Symbol
1N5820
1N5821
1N5822
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 1.0 Amp)
(i
F
= 3.0 Amp)
(i
F
= 9.4 Amp)
V
F
0.370
0.475
0.850
0.380
0.500
0.900
0.390
0.525
0.950
V
Maximum Instantaneous Reverse Current
@ Rated dc Voltage (Note 2)
T
L
= 25
C
T
L
= 100
C
i
R
2.0
20
2.0
20
2.0
20
mA
1. Lead Temperature reference is cathode lead 1/32
from case.
2. Pulse Test: Pulse Width = 300
s, Duty Cycle = 2.0%.
*Indicates JEDEC Registered Data for 1N5820-22.
1N5820, 1N5821, 1N5822
http://onsemi.com
3
NOTE 3 -- DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal
runaway must be considered when operating this rectifier at
reverse voltages above 0.1 V
RWM
. Proper derating may be
accomplished by use of equation (1).
T
A(max)
= T
J(max)
* R
JA
P
F(AV)
* R
JA
P
R(AV)
(1)
where T
A(max)
= Maximum allowable ambient temperature
T
J(max)
= Maximum allowable junction temperature
(125
C or the temperature at which thermal
runaway occurs, whichever is lowest)
P
F(AV)
= Average forward power dissipation
P
R(AV)
= Average reverse power dissipation
R
JA
= Junction-to-ambient thermal resistance
Figures 1, 2, and 3 permit easier use of equation (1) by
taking reverse power dissipation and thermal runaway into
consideration. The figures solve for a reference temperature
as determined by equation (2).
T
R
= T
J(max)
* R
JA
P
R(AV)
(2)
Substituting equation (2) into equation (1) yields:
T
A(max)
= T
R
* R
JA
P
F(AV)
(3)
Inspection of equations (2) and (3) reveals that T
R
is the
ambient temperature at which thermal runaway occurs or
where T
J
= 125
C, when forward power is zero. The
transition from one boundary condition to the other is
evident on the curves of Figures 1, 2, and 3 as a difference
in the rate of change of the slope in the vicinity of 115
C. The
data of Figures 1, 2, and 3 is based upon dc conditions. For
use in common rectifier circuits, Table 1 indicates suggested
factors for an equivalent dc voltage to use for conservative
design, that is:
V
R(equiv)
= V
(FM)
F
(4)
The factor F is derived by considering the properties of the
various rectifier circuits and the reverse characteristics of
Schottky diodes.
EXAMPLE: Find T
A(max)
for 1N5821 operated in a
12-volt dc supply using a bridge circuit with capacitive filter
such that I
DC
= 2.0 A (I
F(AV)
= 1.0 A), I
(FM)
/I
(AV)
= 10, Input
Voltage = 10 V
(rms)
, R
JA
=
40
C/W.
Step 1. Find V
R(equiv).
Read F = 0.65 from Table 1,
NV
R(equiv)
= (1.41) (10) (0.65) = 9.2 V.
Step 2. Find T
R
from Figure 2. Read T
R
= 108
C
@ V
R
= 9.2 V and R
JA
= 40
C/W.
Step 3. Find P
F(AV)
from Figure 6. **Read P
F(AV)
= 0.85 W
@
I(FM)
I(AV)
+ 10 and IF(AV) + 1.0 A.
Step 4. Find T
A(max)
from equation (3).
T
A(max)
= 108
* (0.85) (40) = 74
C.
**Values given are for the 1N5821. Power is slightly lower
for the 1N5820 because of its lower forward voltage, and
higher for the 1N5822. Variations will be similar for the
MBR-prefix devices, using P
F(AV)
from Figure 6.
Table 1. Values for Factor F
Circuit
Half Wave
Full Wave, Bridge
Full Wave,
Center Tapped*
Load
Resistive
Capacitive*
Resistive
Capacitive
Resistive
Capacitive
Sine Wave
0.5
1.3
0.5
0.65
1.0
1.3
Square Wave
0.75
1.5
0.75
0.75
1.5
1.5
*Note that V
R(PK)
[
2.0 V
in(PK)
. Use line to center tap voltage for V
in.
1N5820, 1N5821, 1N5822
http://onsemi.com
4
Figure 1. Maximum Reference Temperature
1N5820
Figure 2. Maximum Reference Temperature
1N5821
Figure 3. Maximum Reference Temperature
1N5822
Figure 4. Steady-State Thermal Resistance
15
2.0
V
R
, REVERSE VOLTAGE (VOLTS)
115
125
105
30
4.0
V
R
, REVERSE VOLTAGE (VOLTS)
125
115
105
95
85
75
L, LEAD LENGTH (INCHES)
1/8
0
25
20
15
10
5.0
0
2/8
40
T
R
, REFERENCE
TEMPERA
TURE ( C)
T
R
JL
, THERMAL
RESIST
ANCE
95
85
75
5.0
3.0
4.0
7.0
10
20
5.0
7.0
10
15
20
3/8
4/8
5/8
6/8
7/8
1.0
40
35
30
q JUNCTION-T
O-LEAD ( C/W)
BOTH LEADS TO HEAT SINK,
EQUAL LENGTH
MAXIMUM
TYPICAL
, REFERENCE
TEMPERA
TURE ( C)
R
R
qJA
(
C/W) = 70
50
40
28
20
15
10
8.0
15
V
R
, REVERSE VOLTAGE (VOLTS)
115
105
T
R
, REFERENCE
TEMPERA
TURE ( C)
95
85
75
5.0
3.0
4.0
7.0
10
20
R
qJA
(
C/W) = 70
50
40
28
20
15
10
8.0
125
30
R
qJA
(
C/W) = 70
50
40
28
20
15
10
8.0
r(t), TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
0.05
0.03
0.02
0.01
0.1
t, TIME (ms)
0.5
0.3
0.2
1.0
LEAD LENGTH = 1/4
P
pk
P
pk
t
p
t
1
TIME
DUTY CYCLE = t
p
/t
1
PEAK POWER, P
pk
, is peak of an
equivalent square power pulse.
T
JL
= P
pk
R
JL
[D + (1 - D)
r(t
1
+ t
p
) + r(t
p
) - r(t
1
)] where:
T
JL
= the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t
1
+ t
p
) = normalized value of transient thermal resistance at time
t
1
+ t
p
, etc.
Figure 5. Thermal Response
20 k
The temperature of the lead should be measured using a ther-
mocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large
enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once
steady-state conditions are achieved. Using the measured val-
ue of T
L
, the junction temperature may be determined by:
T
J
= T
L
+
DT
JL
1N5820, 1N5821, 1N5822
http://onsemi.com
5
3.0
0.1
I
F(AV)
, AVERAGE FORWARD CURRENT (AMP)
10
7.0
5.0
0.7
0.5
0.1
5.0
P
0.2
0.3
0.5
2.0
,
A
VERAGE POWER DISSIP
A
TION (W
A
TTS)
F(A
V)
3.0
2.0
1.0
0.3
0.2
0.7 1.0
7.0 10
Figure 6. Forward Power Dissipation 1N5820-22
dc
SQUARE WAVE
T
J
125
C
SINE WAVE
I
(FM)
I
(AV)
+ p (Resistive Load)
Capacitive
Loads
5.0
10
20
T
A(A)
T
A(K)
T
L(A)
T
C(A)
T
J
T
C(K)
T
L(K)
P
D
R
S(A)
R
L(A)
R
J(A)
R
J(K)
R
L(K)
R
S(K)
NOTE 4 - APPROXIMATE THERMAL CIRCUIT MODEL
Use of the above model permits junction to lead thermal
resistance for any mounting configuration to be found. For
a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heat sink.
Terms in the model signify:
T
A
= Ambient Temperature
T
C
= Case Temperature
T
L
= Lead Temperature
T
J
= Junction Temperature
R
S
= Thermal Resistance, Heat Sink to Ambient
R
L
= Thermal Resistance, Lead to Heat Sink
R
J
= Thermal Resistance, Junction to Case
P
D
= Total Power Dissipation = P
F
+ P
R
P
F
= Forward Power Dissipation
P
R
= Reverse Power Dissipation
(Subscripts (A) and (K) refer to anode and cathode sides,
respectively.) Values for thermal resistance components
are:
R
L
= 42
C/W/in typically and 48
C/W/in maximum
R
J
= 10
C/W typically and 16
C/W maximum
The maximum lead temperature may be found as follows:
T
L
= T
J(max)
* n T
JL
where
n T
JL
[ R
JL
P
D
TYPICAL VALUES FOR R
JA
IN STILL AIR
Data shown for thermal resistance junction-to-ambient (R
JA
)
for the mountings shown is to be used as typical guideline values
for preliminary engineering, or in case the tie point temperature
cannot be measured.
1
2
3
Mounting
Method
Lead Length, L (in)
1/8
1/4
1/2
3/4
R
JA
50
51
53
55
C/W
C/W
C/W
58
59
61
63
28
NOTE 5 -- MOUNTING DATA
Mounting Method 1
P.C. Board where available
copper surface is small.
Mounting Method 3
P.C. Board with
2-1/2
x 2-1/2
copper surface.
BOARD GROUND
PLANE
VECTOR PUSH-IN
TERMINALS T-28
Mounting Method 2
L
L
L
L
L = 1/2
1N5820, 1N5821, 1N5822
http://onsemi.com
6
75
C
25
C
100
C
T
J
= 125
C
NOTE 6 -- HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to minor-
ity carrier injection and stored charge. Satisfactory circuit
analysis work may be performed by using a model consist-
ing of an ideal diode in parallel with a variable capacitance.
(See Figure 10.)
Figure 7. Typical Forward Voltage
Figure 8. Maximum Non-Repetitive Surge
Current
Figure 9. Typical Reverse Current
1.2
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
50
5.0
NUMBER OF CYCLES
5.0
100
1.0
10
V
R
, REVERSE VOLTAGE (VOLTS)
8.0
0
50
0.2
0.01
16
i F
, INST
ANT
ANEOUS FOR
W
ARD CURRENT
(AMP)
I
0.5
0.4
0
0.2
0.6
0.8
7.0 10
2.0
3.0
100
24
32
40
0.05
1.4
100
20
0.1
, PEAK HALF-W
A
VE CURRENT
(AMP)
FSM
70
50
30
20
T
J
= 100
C
25
C
1.0
0.3
0.2
0.1
0.07
0.7
1.0
2.0
3.0
7.0
10
20
30
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.5
200
70
2.0
3.0
5.0
10
500
300
100
C, CAP
ACIT
ANCE (pF)
0.7
7.0
20
30
1N5820
1N5821
1N5822
T
J
= 25
C
f = 1.0 MHz
20
30
50
70
T
L
= 75
C
f = 60 Hz
SURGE APPLIED AT RATED LOAD CONDITIONS
Figure 10. Typical Capacitance
I
,
REVERSE CURRENT
(mA)
R
0.02
0.05
10
1.0
0.5
5.0
2.0
4.0
12
20
28
36
1N5820
1N5821
1N5822
1 CYCLE
1.1
0.3
0.1
0.5
0.7
1.3
0.9
1N5820, 1N5821, 1N5822
http://onsemi.com
7
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 267-05
(DO-201AD)
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
1
2
K
A
K
D
B
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.287
0.374
7.30
9.50
B
0.189
0.209
4.80
5.30
D
0.047
0.051
1.20
1.30
K
1.000
---
25.40
---
1N5820, 1N5821, 1N5822
http://onsemi.com
8
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be
validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
1N5820/D
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
N. American Technical Support: 800-282-9855 Toll Free USA/Canada
PDF 
ZIP