Semiconductor Components Industries, LLC, 2004
April, 2004 - Rev. 7
1
Publication Order Number:
1PMT5.0AT3/D
1PMT5.0AT1/T3 Series
Zener Transient
Voltage Suppressor
POWERMITE
Package
The 1PMT5.0AT1/T3 Series is designed to protect voltage
sensitive components from high voltage, high energy transients.
Excellent clamping capability, high surge capability, low zener
impedance and fast response time. The advanced packaging
technique provides for a highly efficient micro miniature, space
saving surface mount with its unique heat sink design. The
POWERMITE has the same thermal performance as the SMA while
being 50% smaller in footprint area, and delivering one of the lowest
height profiles (1.1 mm) in the industry. Because of its small size, it is
ideal for use in cellular phones, portable devices, business machines,
power supplies and many other industrial/consumer applications.
Specification Features:
Stand-off Voltage: 5 - 58 V
Peak Power - 200 W @ 1 ms (1PMT5.0A - 1PMT36A)
- 175 W @ 1 ms (1PMT40A - 1PMT58A)
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Low Profile - Maximum Height of 1.1 mm
Integral Heat Sink/Locking Tabs
Full Metallic Bottom Eliminates Flux Entrapment
Small Footprint - Footprint Area of 8.45 mm
2
POWERMITE is JEDEC Registered as DO-216AA
Cathode Indicated by Polarity Band
Pb-Free Package is Available
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MOUNTING POSITION:
Any
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
C for 10 Seconds
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
5 - 58 V
200 W PEAK POWER
Device
Package
Shipping
ORDERING INFORMATION
1PMT5.0AT1
POWERMITE
3,000/Tape & Reel
POWERMITE
CASE 457
PLASTIC
1
2
1: CATHODE
2: ANODE
1
2
LEAD ORIENTATION IN TAPE:
Cathode (Short) Lead to Sprocket Holes
Mxx
= Specific Device Code
xx
= 5 - 58
=
(See Table Next Page)
D
= Date Code
MARKING DIAGRAM
Mxx
D
1
CATHODE
2
ANODE
1PMT5.0AT3
POWERMITE 12,000/Tape & Reel
http://onsemi.com
1PMT5.0AT3G POWERMITE
(Pb-Free)
12,000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Uni-Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1PMT5.0AT1/T3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Maximum P
pk
Dissipation, (PW-10/1000
m
s) (Note 1) (1PMT5.0A - 1PMT36A)
P
pk
200
W
Maximum P
pk
Dissipation, (PW-10/1000
m
s) (Note 1) (1PMT40A - 1PMT58A)
P
pk
175
W
Maximum P
pk
Dissipation, (PW-8/20
m
s) (Note 1)
P
pk
1000
W
DC Power Dissipation @ T
A
= 25
C (Note 2)
Derate above 25
C
Thermal Resistance from Junction-to-Ambient
P
D
R
q
JA
500
4.0
248
mW
mW/
C
C/W
Thermal Resistance from Junction-to-Lead (Anode)
R
q
Janode
35
C/W
Maximum DC Power Dissipation (Note 3)
Thermal Resistance from Junction to Tab (Cathode)
P
D
R
q
Jcathode
3.2
23
W
C/W
Operating and Storage Temperature Range
T
J
, T
stg
-55 to +150
C
1. Non-repetitive current pulse at T
A
= 25
C.
2. Mounted with recommended minimum pad size, DC board FR-4.
3. At Tab (Cathode) temperature, T
tab
= 75
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 4) = 35 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS
(T
L
= 30
C unless otherwise noted, V
F
= 1.25 Volts @ 200 mA)
V
RWM
V
BR
@ I
T
(V) (Note 6)
I
T
I
R
@ V
RWM
V
C
@ I
PP
I
PP
(A)
Device
Marking
(Note 5)
Min
Nom
Max
(mA)
(
m
A)
(V)
(Note 7)
1PMT5.0AT1, T3
MKE
5.0
6.4
6.7
7.0
10
800
9.2
21.7
1PMT7.0AT1, T3
MKM
7.0
7.78
8.2
8.6
10
500
12
16.7
1PMT12AT1, T3
MLE
12
13.3
14.0
14.7
1.0
5.0
19.9
10.1
1PMT16AT1, T3
MLP
16
17.8
18.75
19.7
1.0
5.0
26
7.7
1PMT18AT1, T3
MLT
18
20.0
21.0
22.1
1.0
5.0
29.2
6.8
1PMT22AT1, T3
MLX
22
24.4
25.6
26.9
1.0
5.0
35.5
5.6
1PMT24AT1, T3
MLZ
24
26.7
28.1
29.5
1.0
5.0
38.9
5.1
1PMT26AT1, T3
MME
26
28.9
30.4
31.9
1.0
5.0
42.1
4.8
1PMT28AT1, T3
MMG
28
31.1
32.8
34.4
1.0
5.0
45.4
4.4
1PMT30AT1, T3
MMK
30
33.3
35.1
36.8
1.0
5.0
48.4
4.1
1PMT33AT1, T3
MMM
33
36.7
38.7
40.6
1.0
5.0
53.3
3.8
1PMT36AT1, T3
MMP
36
40.0
42.1
44.2
1.0
5.0
58.1
3.4
1PMT40AT1, T3
MMR
40
44.4
46.8
49.1
1.0
5.0
64.5
2.7
1PMT48AT1, T3
MMX
48
53.3
56.1
58.9
1.0
5.0
77.4
2.3
1PMT51AT1, T3
MMZ
51
56.7
59.7
62.7
1.0
5.0
82.4
2.1
1PMT58AT1, T3
MNG
58
64.4
67.8
71.2
1.0
5.0
93.6
1.9
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (V
RWM
) which should be equal to or greater
than the DC or continuous peak operating voltage level.
6. V
BR
measured at pulse test current I
T
at ambient temperature of 25
C.
7. Surge current waveform per Figure 2 and derate per Figure 4.
1PMT5.0AT1/T3 Series
http://onsemi.com
3
P
, PEAK POWER (W
A
TTS)
P
t
P
, PULSE WIDTH (ms)
100
1000
10,000
1.0
10
100
10
0
1
2
3
4
0
50
100
t, TIME (ms)
V
ALUE (%)
HALF VALUE - I
RSM
2
PEAK VALUE - I
RSM
t
r
t
r
10 ms
TYPICAL PROTECTION CIRCUIT
V
in
V
L
Z
in
LOAD
PEAK PULSE DERA
TING IN % OF
PEAK POWER OR CURRENT
@
T A
= 25
C
100
80
60
40
20
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
C)
120
140
160
t
P
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50%
OF I
RSM
.
Figure 1. Pulse Rating Curve
Figure 2. 10 X 1000
m
s Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
t, TIME (ms)
% OF PEAK PULSE CURRENT
t
P
t
r
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE I
RSM
@ 8 ms
HALF VALUE I
RSM
/2 @ 20 ms
Figure 3. 8 X 20
m
s Pulse Waveform
1000
10,000
Figure 4. Pulse Derating Curve
1PMT5.0AT1/T3 Series
http://onsemi.com
4
Figure 5. Typical Derating Factor for Duty Cycle
DERA
TING F
ACT
OR
1 ms
10
m
s
1
0.7
0.5
0.3
0.05
0.1
0.2
0.01
0.02
0.03
0.07
100
m
s
0.1 0.2
0.5
2
5
10
50
1
20
100
D, DUTY CYCLE (%)
PULSE WIDTH
10 ms
Figure 6. Steady State Power Derating
1.2
1.0
0.8
0.6
0.4
0.2
0
-55
25
85
150
T, TEMPERATURE (
C)
V
,
TYPICAL
FOR
W
ARD VOL
T
AGE (VOL
TS)
F
Figure 7. Forward Voltage
25
50
75
100
125
175
3.5
2.5
2
1.5
1
0
T, TEMPERATURE (
C)
P
, MAXIMUM POWER DISSIP
A
TION (W)
D
0.5
T
L
150
3
10,000
1000
100
10
1
10
100
WORKING PEAK REVERSE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE (pF)
Figure 8. Capacitance versus Working Peak
Reverse Voltage
MEASURED @ 50% V
RWM
MEASURED @ ZERO BIAS
1PMT5.0AT1/T3 Series
http://onsemi.com
5
OUTLINE DIMENSIONS
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
1.75
2.05
0.069
0.081
B
1.75
2.18
0.069
0.086
C
0.85
1.15
0.033
0.045
D
0.40
0.69
0.016
0.027
F
0.70
1.00
0.028
0.039
H
-0.05
+0.10 -0.002 +0.004
J
0.10
0.25
0.004
0.010
K
3.60
3.90
0.142
0.154
L
0.50
0.80
0.020
0.031
R
1.20
1.50
0.047
0.059
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
S
B
M
0.08 (0.003)
C
S
T
-A-
-B-
S
J
K
-T-
H
L
J
C
D
S
B
M
0.08 (0.003)
C
S
T
F
TERM. 1
TERM. 2
R
0.50 REF
0.019 REF
POWERMITE
CASE 457-04
ISSUE D
POWERMITE
)
2.54
0.100
0.635
0.025
1.27
0.050
2.67
0.105
0.762
0.030
mm
inches
SCALE 10:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1PMT5.0AT1/T3 Series
http://onsemi.com
6
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PUBLICATION ORDERING INFORMATION
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Phone: 81-3-5773-3850
1PMT5.0AT3/D
POWERMITE and COOLPACK are registered trademarks of and used under a license from Microsemi Corporation.
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