Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 5
1
Publication Order Number:
1SMA5.0AT3/D
1SMA5.0AT3 Series
400 Watt Peak Power Zener
Transient Voltage Suppressors
Unidirectional*
The SMA series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMA series is supplied in
ON Semiconductor's exclusive, cost-effective, highly reliable
Surmetic
t package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Specification Features:
Working Peak Reverse Voltage Range 5.0 V to 78 V
Standard Zener Breakdown Voltage Range 6.7 V to 91.25 V
Peak Power 400 Watts @ 1 ms
ESD Rating of Class 3 (> 16 KV) per Human Body Model
Response Time is Typically < 1 ns
Flat Handling Surface for Accurate Placement
Package Design for Top Slide or Bottom Circuit Board Mounting
Low Profile Package
Mechanical Characteristics:
CASE:
Void-free, transfer-molded plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
C for 10 Seconds
POLARITY:
Cathode indicated by molded polarity notch or polarity
band
MOUNTING POSITION:
Any
MAXIMUM RATINGS
Please See the Table on the Following Page
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.078 VOLTS
400 WATTS PEAK POWER
Device
{
Package
Shipping
ORDERING INFORMATION
1SMAxxAT3
SMA
5000/Tape & Reel
SMA
CASE 403B
PLASTIC
xx
= Specific Device Code
=
(See Table on Page 3)
LL
= Assembly Location
Y
= Year
WW
= Work Week
xx
LLYWW
MARKING DIAGRAM
*Please see 1SMA10CAT3 to 1SMA78CAT3 for
Bidirectional devices.
The "T3" suffix refers to a 13 inch reel.
CATHODE
ANODE
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1SMA5.0AT3 Series
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2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25
C, Pulse Width = 1 ms
PPK
400
W
DC Power Dissipation @ TL = 75
C
Measured Zero Lead Length (Note 2)
Derate Above 75
C
Thermal Resistance from Junction to Lead
PD
R
q
JL
1.5
20
50
W
mW/
C
C/W
DC Power Dissipation (Note 3) @ TA = 25
C
Derate Above 25
C
Thermal Resistance from Junction to Ambient
PD
R
q
JA
0.5
4.0
250
W
mW/
C
C/W
Forward Surge Current (Note 4) @ TA = 25
C
IFSM
40
A
Operating and Storage Temperature Range
TJ, Tstg
65 to +150
C
1. 10 X 1000
m
s, nonrepetitive
2. 1
square copper pad, FR4 board
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
UniDirectional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted, VF = 3.5 V Max. @
IF = 30 A for all types) (Note 5)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
5. 1/2 sine wave or equivalent, PW = 8.3 ms, nonrepetitive
duty cycle.
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3
ELECTRICAL CHARACTERISTICS
VRWM
Breakdown Voltage
VC @ IPP (Note 8)
Device
VRWM
(Note 6)
IR @ VRWM
VBR (Volts) (Note 7)
@ IT
VC
IPP
Device
Device
Marking
Volts
A
Min
Nom
Max
mA
Volts
Amps
1SMA5.0AT3
QE
5.0
400
6.4
6.7
7.0
10
9.2
43.5
1SMA6.0AT3
QG
6.0
400
6.67
7.02
7.37
10
10.3
38.8
1SMA6.5AT3
QK
6.5
250
7.22
7.6
7.98
10
11.2
35.7
1SMA7.0AT3
QM
7.0
250
7.78
8.19
8.6
10
12.0
33.3
1SMA7.5AT3
QP
7.5
50
8.33
8.77
9.21
1
12.9
31.0
1SMA8.0AT3
QR
8.0
25
8.89
9.36
9.83
1
13.6
29.4
1SMA8.5AT3
QT
8.5
5.0
9.44
9.92
10.4
1
14.4
27.8
1SMA9.0AT3
QV
9.0
2.5
10
10.55
11.1
1
15.4
26.0
1SMA10AT3
QX
10
2.5
11.1
11.7
12.3
1
17.0
23.5
1SMA11AT3
QZ
11
2.5
12.2
12.85
13.5
1
18.2
22.0
1SMA12AT3
RE
12
2.5
13.3
14.0
14.7
1
19.9
20.1
1SMA13AT3
RG
13
2.5
14.4
15.15
15.9
1
21.5
18.6
1SMA14AT3
RK
14
2.5
15.6
16.4
17.2
1
23.2
17.2
1SMA15AT3
RM
15
2.5
16.7
17.6
18.5
1
24.4
16.4
1SMA16AT3
RP
16
2.5
17.8
18.75
19.7
1
26.0
15.4
1SMA17AT3
RR
17
2.5
18.9
19.9
20.9
1
27.6
14.5
1SMA18AT3
RT
18
2.5
20
21.05
22.1
1
29.2
13.7
1SMA20AT3
RV
20
2.5
22.2
23.35
24.5
1
32.4
12.3
1SMA22AT3
RX
22
2.5
24.4
25.65
26.9
1
35.5
11.3
1SMA24AT3
RZ
24
2.5
26.7
28.1
29.5
1
38.9
10.3
1SMA26AT3
SE
26
2.5
28.9
30.4
31.9
1
42.1
9.5
1SMA28AT3
SG
28
2.5
31.1
32.75
34.4
1
45.4
8.8
1SMA30AT3
SK
30
2.5
33.3
35.05
36.8
1
48.4
8.3
1SMA33AT3
SM
33
2.5
36.7
38.65
40.6
1
53.3
7.5
1SMA36AT3
SP
36
2.5
40
42.1
44.2
1
58.1
6.9
1SMA40AT3
SR
40
2.5
44.4
46.75
49.1
1
64.5
6.2
1SMA43AT3
ST
43
2.5
47.8
50.3
52.8
1
69.4
5.8
1SMA45AT3
SV
45
2.5
50
52.65
55.3
1
72.2
5.5
1SMA48AT3
SX
48
2.5
53.3
56.1
58.9
1
77.4
5.2
1SMA51AT3
SZ
51
2.5
56.7
59.7
62.7
1
82.4
4.9
1SMA54AT3
TE
54
2.5
60
63.15
66.3
1
87.1
4.6
1SMA58AT3
TG
58
2.5
64.4
67.8
71.5
1
93.6
4.3
1SMA60AT3
TK
60
2.5
66.7
70.2
73.7
1
96.8
4.1
1SMA64AT3
TM
64
2.5
71.1
74.85
78.6
1
103
3.9
1SMA70AT3
TP
70
2.5
77.8
81.9
86.0
1
113
3.5
1SMA75AT3
TR
75
2.5
83.3
87.7
92.1
1
121
3.3
1SMA78AT3
TS
78
2.5
86.7
91.25
95.8
1
126
3.2
6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level
7. VBR measured at pulse test current IT at an ambient temperature of 25
C
8. Surge current waveform per Figure 2 and derate per Figure 3
1SMA5.0AT3 Series
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4
RATING AND TYPICAL CHARACTERISTIC CURVES
TA = 25
C
PW (ID) IS DEFINED AS THE
POINT WHERE THE PEAK CURRENT
DECAYS TO 50% OF Ipp.
10
s
PEAK VALUE
Ippm
HALF VALUE - Ipp/2
10/1000
s WAVEFORM
AS DEFINED BY R.E.A.
td
120
100
80
60
40
0
0
1
2
3
4
I ppm
, PEAK PULSE CURRENT
(%)
20
5
10-4
100
0.1
1
10
10
1
0.1
tP, PULSE WIDTH (ms)
P pk
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2.
TA = 25
C
, PEAK POWER (kW)
0.01
0.001
t, TIME (ms)
120
100
80
60
40
0
0
40
80
120
160
TA, AMBIENT TEMPERATURE (
C)
PEAK PULSE DERA
TING IN % OF
20
200
PEAK POWER OR CURRENT
10 x 1000 WAVEFORM
AS DEFINED BY R.E.A.
10,000
1,000
100
10
1
2
5
10
20
50
100 200
V(BR), BREAKDOWN VOLTAGE (VOLTS)
MEASURED AT
ZERO BIAS
MEASURED AT
STAND-OFF
VOLTAGE, VWM
TJ = 25
C
f = 1 MHz
Vsig = 50 mVp-p
0
6
T, TEMPERATURE (
C)
50
100
150
P D
, MAXIMUM POWER DISSIP
A
TION (W
A
TTS)
5
4
3
2
0
1
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
Figure 3. Pulse Derating Curve
Figure 4. Typical Junction Capacitance
Figure 5. Steady State Power Derating
C, CAP
ACIT
ANCE (pF)
@ TL = 75
C
PD = 1.5 W
@ TA = 25
C
PD = 0.5 W
25
75
125
1SMA5.0AT3 Series
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5
SMA
CASE 403D02
ISSUE A
SMA FOOTPRINT
mm
inches
0.157
4.0
0.0787
2.0
0.0787
2.0
S
A
D
B
K
J
C
H
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.160
0.180
4.06
4.57
B
0.090
0.115
2.29
2.92
C
0.075
0.095
1.91
2.41
D
0.050
0.064
1.27
1.63
H
0.002
0.006
0.05
0.15
J
0.006
0.016
0.15
0.41
K
0.030
0.060
0.76
1.52
S
0.190
0.220
4.83
5.59
POLARITY INDICATOR OPTIONAL
AS NEEDED
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D-01 OBSOLETE, NEW STANDARD IS
403D-02.
400 Watt Peak Power
Transient Voltage Suppressors Surface Mounted
1SMA5.0AT3 Series
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6
Notes
1SMA5.0AT3 Series
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7
Notes
1SMA5.0AT3 Series
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8
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be
validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
2SMA5.0AT3/D
Literature Fulfillment:
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P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
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