Semiconductor Components Industries, LLC, 2005
January, 2005 - Rev. 6
1
Publication Order Number:
1SMB10CAT3/D
1SMB10CAT3 Series
Watt Peak Power Zener
Transient Voltage Suppressors
Bidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor's exclusive, cost-effective, highly reliable
Surmetic
TM
package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Features
Working Peak Reverse Voltage Range - 10 V to 78 V
Standard Zener Breakdown Voltage Range - 11.7 V to 91.3 V
Peak Power - 600 Watts @ 1 ms
ESD Rating of Class 3 (> 16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
mA Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Pb-Free Packages are Available
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
C for 10 Seconds
LEADS:
Modified L-Bend providing more contact area to bond pads
POLARITY:
Polarity band will not be indicated
MOUNTING POSITION:
Any
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
10-78 V, 600 W PEAK POWER
Device
*
Package
Shipping
ORDERING INFORMATION
1SMBxxCAT3
SMB
2500/Tape & Reel
SMB
CASE 403A
PLASTIC
Y
= Year
WW
= Work Week
xxC
= Specific Device Code
=
(See Table Next Page)
YWW
xxC
MARKING DIAGRAM
*The "T3" suffix refers to a 13 inch reel.
1SMBxxCAT3G
SMB
(Pb-Free)
2500/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Individual devices are listed on page 3 of this data sheet.
http://onsemi.com
Bi-Directional TVS
I
PP
I
PP
V
I
I
R
I
T
I
T
I
R
V
RWM
V
C
V
BR
V
RWM
V
C
V
BR
1SMB10CAT3 Series
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2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1.)
@ T
L
= 25
C, Pulse Width = 1 ms
P
PK
600
W
DC Power Dissipation @ T
L
= 75
C
Measured Zero Lead Length (Note 2.)
Derate Above 75
C
Thermal Resistance from Junction-to-Lead
P
D
R
q
JL
3.0
40
25
W
mW/
C
C/W
DC Power Dissipation (Note 3.) @ T
A
= 25
C
Derate Above 25
C
Thermal Resistance from Junction-to-Ambient
P
D
R
q
JA
0.55
4.4
226
W
mW/
C
C/W
Operating and Storage
Temperature Range
T
J
, T
stg
-65 to +150
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not
implied, damage may occur and reliability may be affected.
1. 10 X 1000
m
s, non-repetitive
2. 1
square copper pad, FR-4 board
3. FR-4 board, using ON Semiconductor minimum recommended footprint, as
shown in 403A case outline dimensions spec.
*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
1SMB10CAT3 Series
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3
ELECTRICAL CHARACTERISTICS
(Devices listed in
bold, italic are ON Semiconductor Preferred devices.)
V
RWM
Breakdown Voltage
V
C
@ I
PP
(Note 3)
Device
V
RWM
(Note 1)
I
R
@ V
RWM
V
BR
(Note 2)
Volts
@ I
T
V
C
I
PP
Device
Device
Marking
Volts
m
A
Min
Nom
Max
mA
Volts
Amps
1SMB10CAT3, G*
1SMB11CAT3, G*
1SMB12CAT3, G*
1SMB13CAT3, G*
KXC
KZC
LEC
LGC
10
11
12
13
5.0
5.0
5.0
5.0
11.1
12.2
13.3
14.4
11.69
12.84
14.00
15.16
12.27
13.5
14.7
15.9
1.0
1.0
1.0
1.0
17.0
18.2
19.9
21.5
35.3
33.0
30.2
27.9
1SMB14CAT3
1SMB15CAT3, G*
1SMB16CAT3
1SMB17CAT3
LKC
LMC
LPC
LRC
14
15
16
17
5.0
5.0
5.0
5.0
15.6
16.7
17.8
18.9
16.42
17.58
18.74
19.90
17.2
18.5
19.7
20.9
1.0
1.0
1.0
1.0
23.2
24.4
26.0
27.6
25.8
24.0
23.1
21.7
1SMB18CAT3
1SMB20CAT3, G*
1SMB22CAT3, G*
1SMB24CAT3
LTC
LVC
LXC
LZC
18
20
22
24
5.0
5.0
5.0
5.0
20.0
22.2
24.4
26.7
21.06
23.37
25.69
28.11
22.1
24.5
27.0
29.5
1.0
1.0
1.0
1.0
29.2
32.4
35.5
38.9
20.5
18.5
16.9
15.4
1SMB26CAT3
1SMB28CAT3
1SMB30CAT3, G*
1SMB33CAT3, G*
MEC
MGC
MKC
MMC
26
28
30
33
5.0
5.0
5.0
5.0
28.9
31.1
33.3
36.7
30.42
32.74
35.06
38.63
31.9
34.4
36.8
40.6
1.0
1.0
1.0
1.0
42.1
45.4
48.4
53.3
14.2
13.2
12.4
11.3
1SMB36CAT3, G*
1SMB40CAT3, G*
1SMB43CAT3
1SMB45CAT3
MPC
MRC
MTC
MVC
36
40
43
45
5.0
5.0
5.0
5.0
40.0
44.4
47.8
50.0
42.11
46.74
50.32
52.63
44.2
49.1
52.8
55.3
1.0
1.0
1.0
1.0
58.1
64.5
69.4
72.2
10.3
9.3
8.6
8.3
1SMB48CAT3
1SMB51CAT3, G*
1SMB54CAT3
1SMB58CAT3
MXC
MZC
NEC
NGC
48
51
54
58
5.0
5.0
5.0
5.0
53.3
56.7
60.0
64.4
56.11
59.69
63.16
67.79
58.9
62.7
66.32
71.18
1.0
1.0
1.0
1.0
77.4
82.4
87.1
93.6
7.7
7.3
6.9
6.4
1SMB60CAT3, G*
1SMB64CAT3
1SMB70CAT3
1SMB75CAT3
NKC
NMC
NPC
NRC
60
64
70
75
5.0
5.0
5.0
5.0
66.7
71.1
77.8
83.3
70.21
74.84
81.90
91.65
73.72
78.58
85.99
92.07
1.0
1.0
1.0
1.0
96.8
103
113
121
6.2
5.8
5.3
4.9
1SMB78CAT3
NTC
78
5.0
86.7
91.26
95.83
1.0
126
4.7
1. A transient suppressor is normally selected according to the working peak reverse voltage (V
RWM
), which should be equal to or greater than
the DC or continuous peak operating voltage level.
2. V
BR
measured at pulse test current I
T
at an ambient temperature of 25
C.
3. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data - 600 Watt at the beginning of this group.
* The "G" suffix indicates Pb-Free package available.
1SMB10CAT3 Series
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4
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
t
P
, PULSE WIDTH
1
10
100
0.1
ms
1
ms
10
ms
100
ms
1 ms
10 ms
0.1
Figure 1. Pulse Rating Curve
0
1
2
3
4
0
50
100
t, TIME (ms)
V
ALUE (%)
HALF VALUE - I
PP
2
PEAK VALUE - I
PP
t
r
10 ms
Figure 2. Pulse Waveform
TYPICAL PROTECTION CIRCUIT
V
in
V
L
Z
in
LOAD
Figure 3. Pulse Derating Curve
PEAK PULSE DERA
TING IN % OF
PEAK POWER OR CURRENT
@
T A
= 25
C
100
80
60
40
20
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
C)
120
140
160
t
P
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
P
PK
, PEAK POWER (kW)
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 4.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 5. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25
C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 6. Average power must be derated as the lead or
ambient temperature rises above 25
C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 6 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10
ms pulse. However, when the derating factor for a
given pulse of Figure 6 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
1SMB10CAT3 Series
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5
V
L
V
V
in
V
in
(TRANSIENT)
V
L
t
d
V
V
in
(TRANSIENT)
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 4.
Figure 5.
Figure 6. Typical Derating Factor for Duty Cycle
DERA
TING F
ACT
OR
1 ms
10
m
s
1
0.7
0.5
0.3
0.05
0.1
0.2
0.01
0.02
0.03
0.07
100
m
s
0.1 0.2
0.5
2
5
10
50
1
20
100
D, DUTY CYCLE (%)
PULSE WIDTH
10 ms
UL RECOGNITION
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
1SMB10CAT3 Series
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6
OUTLINE DIMENSIONS
SMB
CASE 403A-03
ISSUE D
A
S
D
B
J
P
K
C
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.160
0.180
4.06
4.57
B
0.130
0.150
3.30
3.81
C
0.075
0.095
1.90
2.41
D
0.077
0.083
1.96
2.11
H 0.0020 0.0060
0.051
0.152
J
0.006
0.012
0.15
0.30
K
0.030
0.050
0.76
1.27
P
0.020 REF
0.51 REF
S
0.205
0.220
5.21
5.59
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 8:1
2.743
0.108
2.159
0.085
2.261
0.089
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
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Phone: 81-3-5773-3850
1SMB10CAT3/D
SURMETIC is a trademark of Semiconductor Components Industries, LLC.
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