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Электронный компонент: 2N3819

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Semiconductor Components Industries, LLC, 2002
March, 2002 Rev. 0
1
Publication Order Number:
2N3819/D
2N3819
JFET VHF/UHF Amplifier
NChannel Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DS
25
Vdc
DrainGate Voltage
V
DG
25
Vdc
GateSource Voltage
V
GS
25
Vdc
Drain Current
I
D
100
mAdc
Forward Gate Current
I
G(f)
10
mAdc
Total Device Dissipation
@ T
A
= 25
C
Derate above 25
C
P
D
350
2.8
mW
mW/
C
Storage Channel Temperature Range
T
stg
65 to +150
C
Device
Package
Shipping
ORDERING INFORMATION
2N3819
TO92
TO92
CASE 29
STYLE 22
5000 Units/Box
3
2
1
2N3819 = Device Code
Y
= Year
WW
= Work Week
MARKING DIAGRAM
2N
3819
YWW
http://onsemi.com
3 DRAIN
1 SOURCE
2
GATE
2N3819
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
GateSource Breakdown Voltage
(I
G
= 1.0
Adc, V
DS
= 0)
V
(BR)GSS
25
Vdc
GateSource
(V
DS
= 15 Vdc, I
D
= 200
Adc)
V
GS
0.5
7.5
Vdc
GateSource Cutoff Voltage
(V
DS
= 15 Vdc, I
D
= 10 nAdc)
V
GS(off)
8.0
Vdc
Gate Reverse Current
(V
GS
= 15 Vdc, V
DS
= 0)
I
GSS
210
nAdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current
(V
DS
= 15 Vdc, V
GS
= 0)
I
DSS
2.0
20
mAdc
SMALLSIGNAL CHARACTERISTICS
Forward Transfer Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
Y
fs
3.0
6.5
mmhos
Output Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
Y
os
40
m
mhos
Forward Transfer Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 200 MHz)
Y
fs
5.6
mmhos
Reverse Transfer Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 200 MHz)
Y
rs
1.0
mmhos
Input Capacitance
(V
DS
= 20 Vdc, V
GS
= 1.0 Vdc)
C
iss
3.0
pF
Reverse Transfer Capacitance
(V
DS
= 20 Vdc, V
GS
= 1.0 Vdc, f = 1.0 MHz)
C
rss
0.7
pF
Output Capacitance
(V
DS
= 20 Vdc, V
GS
= 1.0 Vdc, f = 1.0 MHz)
C
oss
0.9
pF
Cutoff Frequency (Note 1)
(V
DS
= 15 Vdc, V
GS
= 0)
F
(Yfs)
700
MHz
1. The frequency at which g
fs
is 0.7 of its value at 1 kHz.
2N3819
http://onsemi.com
3
f, FREQUENCY (MHz)
30
10
b
is
@ I
DSS
f, FREQUENCY (MHz)
5.0
Figure 1. Input Admittance (y
is
)
Figure 2. Reverse Transfer Admittance (y
rs
)
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(V
DS
= 15 Vdc, T
channel
= 25
C)
f, FREQUENCY (MHz)
20
f, FREQUENCY (MHz)
10
Figure 3. Forward Transadmittance (y
fs
)
Figure 4. Output Admittance (y
os
)
g is
, INPUT
CONDUCT
ANCE (mmhos)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20
30
50 70 100
200 300
500 700 1000
b is
, INPUT
SUSCEPT
ANCE (mmhos)
g fs
, FOR
W
ARD
TRANSCONDUCT
ANCE (mmhos)
|b
fs|, FOR
W
ARD SUSCEPT
ANCE (mmhos)
g rs
, REVERSE
TRANSADMITT
ANCE (mmhos)
b rs
, REVERSE SUSCEPT
ANCE (mmhos)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
g os
, OUTPUT

ADMITT
ANCE (mhos)
b os
, OUTPUT
SUSCEPT
ANCE (mhos)
3.0
0.05
0.07
0.1
0.2
0.3
0.7
0.5
1.0
2.0
10
20
30
50 70 100
200 300
500 700 1000
10
20
30
50 70 100
200 300
500 700 1000
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20 30
50 70 100
200 300
500 7001000
b
is
@ 0.25 I
DSS
g
is
@ I
DSS
g
is
@ 0.25 I
DSS
b
rs
@ I
DSS
0.25 I
DSS
g
rs
@ I
DSS
, 0.25 I
DSS
g
fs
@ I
DSS
|b
fs
| @ I
DSS
|b
fs
| @ 0.25 I
DSS
b
os
@ I
DSS
and 0.25 I
DSS
g
os
@ I
DSS
g
os
@ 0.25 I
DSS
g
fs
@ 0.25 I
DSS
2N3819
http://onsemi.com
4
Figure 5. S
11s
Figure 6. S
12s
0
350
340
330
10
20
30
180
190
200
210
170
160
150
32
31
30
29
28
27
26
25
24
23
22
40
50
60
70
80
90
100
110
120
130
140
0
350
340
330
10
20
30
180
190
200
210
170
160
150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
0
350
340
330
10
20
30
180
190
200
210
170
160
150
32
31
30
29
28
27
26
25
24
23
22
40
50
60
70
80
90
100
110
120
130
140
0
350
340
330
10
20
30
180
190
200
210
170
160
150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
1.0
0.9
0.8
0.7
0.6
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.6
0.5
0.4
0.3
0.3
0.4
0.5
0.6
900
900
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
100
200
300
400
600
700
800
900
500
I
D
= I
DSS
, 0.25 I
DSS
900
500
800
700
600
500
400
300 200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
100
200
300
400
900
600
700
800
900
800
600
400
300
200
200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
900
100
500
700
300
400
500
600
700
800
Figure 7. S
21s
Figure 8. S
22s
COMMON SOURCE CHARACTERISTICS
SPARAMETERS
(V
DS
= 15 Vdc, T
channel
= 25
C, Data Points in MHz)
2N3819
http://onsemi.com
5
f, FREQUENCY (MHz)
10
g
ig
@ I
DSS
f, FREQUENCY (MHz)
0.5
Figure 9. Input Admittance (y
ig
)
Figure 10. Reverse Transfer Admittance (y
rg
)
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(V
DG
= 15 Vdc, T
channel
= 25
C)
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 11. Forward Transfer Admittance (y
fg
)
Figure 12. Output Admittance (y
og
)
g ig
, INPUT
CONDUCT
ANCE (mmhos)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20 30
50 70 100
200 300
500 700 1000
b ig
, INPUT
SUSCEPT
ANCE (mmhos)
g fg
, FOR
W
ARD
TRANSCONDUCT
ANCE (mmhos)
b fg
, FOR
W
ARD SUSCEPT
ANCE (mmhos)
g rg
, REVERSE
TRANSADMITT
ANCE (mmhos)
b rg
, REVERSE SUSCEPT
ANCE (mmhos)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
g og
, OUTPUT

ADMITT
ANCE (mmhos)
b og
, OUTPUT
SUSCEPT
ANCE (mmhos)
0.3
0.01
0.1
0.2
10
20
30
50 70 100
200 300
500 700 1000
10
20 30
50 70 100
200 300
500 700 1000
0.01
0.02
0.03
0.3
10
20
30
50 70 100
200 300
500 700 1000
b
ig
@ 0.25 I
DSS
b
ig
@ I
DSS
g
rg
@ 0.25 I
DSS
g
fg
@ I
DSS
g
fg
@ 0.25 I
DSS
b
rg
@ 0.25 I
DSS
b
og
@ I
DSS
, 0.25 I
DSS
g
og
@ I
DSS
g
og
@ 0.25 I
DSS
0.2
0.005
0.007
0.02
0.03
0.05
0.07
0.1
0.05
0.07
0.1
0.2
0.5
0.7
1.0
b
rg
@ I
DSS
0.25 I
DSS
g
ig
@ I
DSS
, 0.25 I
DSS
b
fg
@ I
DSS