Semiconductor Components Industries, LLC, 2001
November, 2000 Rev. 3
1
Publication Order Number:
2N3903/D
2N3903, 2N3904
2N3903 is a Preferred Device
General Purpose
Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
40
Vdc
CollectorBase Voltage
VCBO
60
Vdc
EmitterBase Voltage
VEBO
6.0
Vdc
Collector Current Continuous
IC
200
mAdc
Total Device Dissipation
@ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation
@ TC = 25
C
Derate above 25
C
PD
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to
+150
C
THERMAL CHARACTERISTICS
(Note 1.)
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
R
JA
200
C/W
Thermal Resistance,
Junction to Case
R
JC
83.3
C/W
1. Indicates Data in addition to JEDEC Requirements.
Device
Package
Shipping
ORDERING INFORMATION
2N3903
TO92
http://onsemi.com
TO92
CASE 29
STYLE 1
5000 Units/Box
3
2
1
Preferred devices are recommended choices for future use
and best overall value.
2N3903RLRM
TO92
2000/Ammo Pack
COLLECTOR
3
2
BASE
1
EMITTER
2N3904
TO92
5000 Units/Box
2N3904RLRA
TO92
2000/Tape & Reel
2N3904RLRE
TO92
2000/Tape & Reel
2N3904RLRM
TO92
2000/Ammo Pack
STYLE 1
Y
= Year
WW
= Work Week
MARKING DIAGRAMS
2N
3903
YWW
2N3904RLRP
TO92
2000/Ammo Pack
2N
3904
YWW
2N3904RL1
TO92
2000/Tape & Reel
2N3904ZL1
TO92
2000/Ammo Pack
2N3903, 2N3904
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 2.) (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc
CollectorBase Breakdown Voltage (IC = 10
m
Adc, IE = 0)
V(BR)CBO
60
Vdc
EmitterBase Breakdown Voltage (IE = 10
m
Adc, IC = 0)
V(BR)EBO
6.0
Vdc
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
50
nAdc
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
50
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 2.)
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
(IC = 10 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
(IC = 50 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
(IC = 100 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
hFE
20
40
35
70
50
100
30
60
15
30
150
300
CollectorEmitter Saturation Voltage (Note 2.)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc
VCE(sat)
0.2
0.3
Vdc
BaseEmitter Saturation Voltage (Note 2.)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
0.65
0.85
0.95
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
2N3903
2N3904
fT
250
300
MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
4.0
pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
8.0
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N3903
2N3904
hie
1.0
1.0
8.0
10
k
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N3903
2N3904
hre
0.1
0.5
5.0
8.0
X 104
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N3903
2N3904
hfe
50
100
200
400
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.0
40
m
mhos
Noise Figure
(IC = 100
m
Adc, VCE = 5.0 Vdc, RS = 1.0 k
, f = 1.0 kHz)
2N3903
2N3904
NF
6.0
5.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
td
35
ns
Rise Time
(VCC 3.0 Vdc, VBE 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
tr
35
ns
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc,
2N3903
IB1 = IB2 = 1.0 mAdc)
2N3904
ts
175
200
ns
Fall Time
tf
50
ns
2. Pulse Test: Pulse Width
v
300
m
s; Duty Cycle
v
2%.
2N3903, 2N3904
http://onsemi.com
4
Figure 5. TurnOn Time
IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
Figure 6. Rise Time
IC, COLLECTOR CURRENT (mA)
TIME (ns)
1.0
2.0 3.0
10
20
70
5
100
t , RISE
TIME (ns)
Figure 7. Storage Time
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
IC, COLLECTOR CURRENT (mA)
5.0 7.0
30
50
200
10
30
7
20
70
100
200
300
500
50
1.0
2.0 3.0
10
20
70
5
100
5.0 7.0
30
50
200
10
30
7
20
70
100
200
300
500
50
1.0
2.0 3.0
10
20
70
5
100
5.0 7.0
30
50
200
10
30
7
20
70
100
200
300
500
50
1.0
2.0 3.0
10
20
70
5
100
5.0 7.0
30
50
200
10
30
7
20
r
t , F
ALL
TIME (ns)
f
t , ST
ORAGE
TIME (ns)
s
VCC = 40 V
IC/IB = 10
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
IC/IB = 10
IC/IB = 20
IC/IB = 10
IC/IB = 20
t
s = ts - 1/8 tf
IB1 = IB2
TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25
C, Bandwidth = 1.0 Hz)
Figure 9.
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 10.
RS, SOURCE RESISTANCE (k OHMS)
0
NF
, NOISE FIGURE (dB)
1.0
2.0
4.0
10
20
40
0.2
0.4
0
100
4
6
8
10
12
2
14
0.1
1.0
2.0
4.0
10
20
40
0.2
0.4
100
NF
, NOISE FIGURE (dB)
f = 1.0 kHz
IC = 1.0 mA
IC = 0.5 mA
IC = 50 mA
IC = 100 mA
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
SOURCE RESISTANCE = 500 W
IC = 100 mA
SOURCE RESISTANCE = 1.0 k
IC = 50 mA
2N3903, 2N3904
http://onsemi.com
5
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25
C)
Figure 11. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 12. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , CURRENT
GAIN
h , OUTPUT
ADMITT
ANCE ( mhos)
Figure 13. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1
0.2
1.0
2.0
5.0
0.5
10
0.3
0.5
3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOL
T
AGE FEEDBACK RA
TIO (X 10 )
re
h , INPUT
IMPEDANCE (k OHMS)
ie
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
2
1
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
fe
m
-4
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