1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
40
Vdc
Collector Base Voltage
VCBO
40
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
200
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Power Dissipation @ TA = 60
C
PD
250
mW
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS(1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
--
Vdc
Collector Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
V(BR)CBO
40
--
Vdc
Emitter Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
V(BR)EBO
5.0
--
Vdc
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
--
50
nAdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
--
50
nAdc
1. Indicates Data in addition to JEDEC Requirements.
2. Pulse Test: Pulse Width
v
300
m
s; Duty Cycle
v
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N3905/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2N3905
2N3906
*Motorola Preferred Device
CASE 2904, STYLE 1
TO92 (TO226AA)
1
2
3
*
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
REV 2
2N3905 2N3906
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
2N3905
2N3906
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
2N3905
2N3906
(IC = 10 mAdc, VCE = 1.0 Vdc)
2N3905
2N3906
(IC = 50 mAdc, VCE = 1.0 Vdc)
2N3905
2N3906
(IC = 100 mAdc, VCE = 1.0 Vdc)
2N3905
2N3906
hFE
30
60
40
80
50
100
30
60
15
30
--
--
--
--
150
300
--
--
--
--
--
Collector Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc
VCE(sat)
--
--
0.25
0.4
Vdc
Base Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
0.65
--
0.85
0.95
Vdc
SMALL SIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
2N3905
2N3906
fT
200
250
--
--
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
--
4.5
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
--
10.0
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N3905
2N3906
hie
0.5
2.0
8.0
12
k
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N3905
2N3906
hre
0.1
0.1
5.0
10
X 10 4
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N3905
2N3906
hfe
50
100
200
400
--
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N3905
2N3906
hoe
1.0
3.0
40
60
m
mhos
Noise Figure
(IC = 100
m
Adc, VCE = 5.0 Vdc, RS = 1.0 k
, f = 1.0 kHz)
2N3905
2N3906
NF
--
--
5.0
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
td
--
35
ns
Rise Time
( CC
,
BE
,
IC = 10 mAdc, IB1 = 1.0 mAdc)
tr
--
35
ns
Storage Time
2N3905
2N3906
(VCC = 3.0 Vdc, IC = 10 mAdc,
ts
--
--
200
225
ns
Fall Time
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAd
2N3905
2N3906
tf
--
--
60
75
ns
1. Pulse Test: Pulse Width
v
300
m
s; Duty Cycle
v
2.0%.
2N3905 2N3906
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916
CS < 4 pF*
3 V
275
10 k
CS < 4 pF*
< 1 ns
+0.5 V
10.6 V
300 ns
DUTY CYCLE = 2%
< 1 ns
+9.1 V
10.9 V
DUTY CYCLE = 2%
t1
0
10 < t1 < 500
m
s
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
5000
1.0
VCC = 40 V
IC/IB = 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
CAP
ACIT
ANCE (pF)
1.0
2.0 3.0
5.0 7.0 10
20 30 40
0.2 0.3
0.5 0.7
QT
QA
Cibo
Cobo
TJ = 25
C
TJ = 125
C
Figure 5. Turn On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
TIME (ns)
1.0
2.0 3.0
10
20
70
5
100
Figure 6. Fall Time
IC, COLLECTOR CURRENT (mA)
5.0 7.0
30
50
200
10
30
7
20
70
100
200
300
500
50
1.0
2.0 3.0
10
20
70
5
100
5.0 7.0
30
50
200
10
30
7
20
t , F
ALL
TIME
(ns)
f
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
2N3905 2N3906
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25
C, Bandwidth = 1.0 Hz)
Figure 7.
f, FREQUENCY (kHz)
2.0
3.0
4.0
5.0
1.0
0.1
Figure 8.
Rg, SOURCE RESISTANCE (k OHMS)
0
NF
, NOISE FIGURE (dB)
1.0
2.0
4.0
10
20
40
0.2
0.4
0
100
4
6
8
10
12
2
0.1
1.0
2.0
4.0
10
20
40
0.2
0.4
100
NF
, NOISE FIGURE (dB)
f = 1.0 kHz
IC = 1.0 mA
IC = 0.5 mA
IC = 50
m
A
IC = 100
m
A
SOURCE RESISTANCE = 200
W
IC = 1.0 mA
SOURCE RESISTANCE = 200
W
IC = 0.5 mA
SOURCE RESISTANCE = 2.0 k
IC = 100
m
A
SOURCE RESISTANCE = 2.0 k
IC = 50
m
A
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25
C)
Figure 9. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 10. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , DC CURRENT
GAIN
h , OUTPUT
ADMITT
ANCE ( mhos)
Figure 11. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1
0.2
1.0
2.0
5.0
0.5
10
0.3
0.5
3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOL
T
AGE
FEEDBACK
RA
TIO (X 10 )
re
h , INPUT
IMPEDANCE
(k
OHMS)
ie
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
7
5
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
fe
m
4
70
30
0.7
7.0
0.7
7.0
7.0
3.0
0.7
0.3
0.7
7.0
0.7
7.0
2N3905 2N3906
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 13. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT
GAIN
(NORMALIZED)
0.5
2.0
3.0
10
50
70
0.2
0.3
0.1
100
1.0
0.7
200
30
20
5.0
7.0
FE
VCE = 1.0 V
TJ = +125
C
+25
C
55
C
Figure 14. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECT
OR
EMITTER
VOL
T
AGE
(VOL
TS)
0.5
2.0
3.0
10
0.2
0.3
0
1.0
0.7
5.0
7.0
CE
IC = 1.0 mA
TJ = 25
C
0.07
0.05
0.03
0.02
0.01
10 mA
30 mA
100 mA
Figure 15. "ON" Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 16. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V
,
VOL
T
AGE
(VOL
TS)
1.0
2.0
5.0
10
20
50
0
100
0.5
0
0.5
1.0
0
60
80
120
140
160
180
20
40
100
200
1.0
1.5
2.0
200
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
+25
C TO +125
C
55
C TO +25
C
+25
C TO +125
C
55
C TO +25
C
q
VC FOR VCE(sat)
q
VB FOR VBE(sat)
,
TEMPERA
TURE COEFFICIENTS (mV/ C)
V
q
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