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Электронный компонент: 2N3906RLRM

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Semiconductor Components Industries, LLC, 2001
November, 2001 Rev. 0
1
Publication Order Number:
2N3906/D
2N3906
Preferred Device
General Purpose
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
40
Vdc
CollectorBase Voltage
VCBO
40
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
Collector Current Continuous
IC
200
mAdc
Total Device Dissipation
@ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Power Dissipation
@ TA = 60
C
PD
250
mW
Total Device Dissipation
@ TC = 25
C
Derate above 25
C
PD
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to
+150
C
THERMAL CHARACTERISTICS
(Note 1.)
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
R
JA
200
C/W
Thermal Resistance,
Junction to Case
R
JC
83.3
C/W
1. Indicates Data in addition to JEDEC Requirements.
Device
Package
Shipping
ORDERING INFORMATION
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
COLLECTOR
3
2
BASE
1
EMITTER
2N3906
TO92
5000 Units/Box
2N3906RLRA
TO92
2000/Tape & Reel
2N3906RLRE
TO92
2000/Tape & Reel
2N3906RLRM
TO92
2000/Ammo Pack
STYLE 1
2N3906RLRP
TO92
2000/Ammo Pack
TO92
CASE 29
STYLE 1
3
2
1
Y
= Year
WW
= Work Week
MARKING DIAGRAMS
2N
3906
YWW
2N3906RL1
TO92
2000/Tape & Reel
2N3906ZL1
TO92
2000/Ammo Pack
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2N3906
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2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 2.) (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc
CollectorBase Breakdown Voltage (IC = 10
m
Adc, IE = 0)
V(BR)CBO
40
Vdc
EmitterBase Breakdown Voltage (IE = 10
m
Adc, IC = 0)
V(BR)EBO
5.0
Vdc
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
50
nAdc
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
50
nAdc
ON CHARACTERISTICS
(Note 2.)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE
60
80
100
60
30

300

CollectorEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc
VCE(sat)

0.25
0.4
Vdc
BaseEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
0.65
0.85
0.95
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
250
MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
4.5
pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
10
pF
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
2.0
12
k
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
0.1
10
X 104
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
100
400
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
3.0
60
m
mhos
Noise Figure
(IC = 100
m
Adc, VCE = 5.0 Vdc, RS = 1.0 k
, f = 1.0 kHz)
NF
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
td
35
ns
Rise Time
(VCC 3.0 Vdc, VBE 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
tr
35
ns
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAdc)
ts
225
ns
Fall Time
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAdc)
tf
75
ns
2. Pulse Test: Pulse Width
v
300
m
s; Duty Cycle
v
2%.
background image
2N3906
http://onsemi.com
3
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916
CS < 4 pF*
3 V
275
10 k
CS < 4 pF*
< 1 ns
+0.5 V
10.6 V
300 ns
DUTY CYCLE = 2%
< 1 ns
+9.1 V
10.9 V
DUTY CYCLE = 2%
t1
0
10 < t1 < 500 ms
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
5000
1.0
VCC = 40 V
IC/IB = 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
CAP
ACIT
ANCE (pF)
1.0
2.0 3.0 5.0 7.0 10
20 30 40
0.2 0.3 0.5 0.7
QT
QA
Cibo
Cobo
TJ = 25
C
TJ = 125
C
Figure 5. TurnOn Time
IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
TIME (ns)
1.0
2.0 3.0
10
20
70
5
100
Figure 6. Fall Time
IC, COLLECTOR CURRENT (mA)
5.0 7.0
30
50
200
10
30
7
20
70
100
200
300
500
50
1.0
2.0 3.0
10
20
70
5
100
5.0 7.0
30
50
200
10
30
7
20
t , F
ALL

TIME (ns)
f
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
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2N3906
http://onsemi.com
4
TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25
C, Bandwidth = 1.0 Hz)
Figure 7.
f, FREQUENCY (kHz)
2.0
3.0
4.0
5.0
1.0
0.1
Figure 8.
Rg, SOURCE RESISTANCE (k OHMS)
0
NF
, NOISE FIGURE (dB)
1.0
2.0
4.0
10
20
40
0.2
0.4
0
100
4
6
8
10
12
2
0.1
1.0
2.0
4.0
10
20
40
0.2
0.4
100
NF
, NOISE FIGURE (dB)
f = 1.0 kHz
IC = 1.0 mA
IC = 0.5 mA
IC = 50 mA
IC = 100 mA
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25
C)
Figure 9. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 10. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , DC CURRENT
GAIN
h , OUTPUT

ADMITT
ANCE ( mhos)
Figure 11. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1
0.2
1.0
2.0
5.0
0.5
10
0.3
0.5
3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOL
T
AGE FEEDBACK RA
TIO (X 10 )
re
h , INPUT
IMPEDANCE (k OHMS)
ie
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
7
5
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
fe
m
-4
70
30
0.7
7.0
0.7
7.0
7.0
3.0
0.7
0.3
0.7
7.0
0.7
7.0
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2N3906
http://onsemi.com
5
TYPICAL STATIC CHARACTERISTICS
Figure 13. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT
GAIN (NORMALIZED)
0.5
2.0
3.0
10
50
70
0.2
0.3
0.1
100
1.0
0.7
200
30
20
5.0
7.0
FE
VCE = 1.0 V
TJ = +125
C
+25
C
-55
C
Figure 14. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECT
OR EMITTER VOL
T
AGE (VOL
TS)
0.5
2.0
3.0
10
0.2
0.3
0
1.0
0.7
5.0
7.0
CE
IC = 1.0 mA
TJ = 25
C
0.07
0.05
0.03
0.02
0.01
10 mA
30 mA
100 mA
Figure 15. "ON" Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 16. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V
,
VOL
T
AGE (VOL
TS)
1.0
2.0
5.0
10
20
50
0
100
-0.5
0
0.5
1.0
0
60
80
120 140
160 180
20
40
100
200
-1.0
-1.5
-2.0
200
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
+25
C TO +125
C
-55
C TO +25
C
+25
C TO +125
C
-55
C TO +25
C
qVC FOR VCE(sat)
qVB FOR VBE(sat)
,
TEMPERA
TURE COEFFICIENTS (mV/ C)
Vq