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Электронный компонент: 2N4410

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Amplifier Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
80
Vdc
CollectorBase Voltage
VCBO
120
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
250
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
80
--
Vdc
CollectorEmitter Breakdown Voltage
(IC = 500
Adc, VBE = 5.0 Vdc, RBE = 8.2 k ohms)
V(BR)CEX
120
--
Vdc
CollectorBase Breakdown Voltage
(IC = 10
Adc, IE = 0)
V(BR)CBO
120
--
Vdc
EmitterBase Breakdown Voltage
(IE = 10
Adc, IC = 0)
V(BR)EBO
5.0
--
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100
C)
ICBO
--
--
0.01
1.0
Adc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
--
0.1
Adc
1. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
November, 2001 Rev. 11
1
Publication Order Number:
2N4410/D
CASE 2911, STYLE 1
TO92 (TO226AA)
1
2
3
2N4410
COLLECTOR
3
2
BASE
1
EMITTER
2N4410
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
hFE
60
60
--
400
--
CollectorEmitter Saturation Voltage
(IC = 1.0 mAdc, IB = 0.1 mAdc)
VCE(sat)
--
0.2
Vdc
BaseEmitter Saturation Voltage
(IC = 1.0 mAdc, IB = 0.1 mAdc)
VBE(sat)
--
0.8
Vdc
BaseEmitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
--
0.8
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product(2)
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
fT
60
300
MHz
CollectorBase Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz, emitter guarded)
Ccb
--
12
pF
EmitterBase Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz, collector guarded)
Ceb
--
50
pF
2. fT = |hfe|
ftest.
2N4410
http://onsemi.com
3
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
500
h , DC CURRENT GAIN FE
TJ = 125
C
-55
C
25
C
5.0
10
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
30
20
300
100
50
7.0
VCE = 1.0 V
VCE = 5.0 V
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
IC = 1.0 mA
0
0.3
0.005
0.01
0.2
0.5
1.0
2.0
20
50
0.8
0.5
0.4
0.9
0.7
0.6
0.2
0.02
0.05
0.1
10
V CE
, COLLECTOR-EMITTER VOL
T
AGE (VOL
TS)
0.1
10 mA
30 mA
100 mA
5.0
2N4410
http://onsemi.com
4
Figure 3. Collector CutOff Region
IC, COLLECTOR CURRENT (mA)
1.0
IC, COLLECTOR CURRENT (mA)
V
,
VOL
T
AGE (VOL
TS)
1.0
2.0
5.0
10
20
50
2.5
100
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
qVC for VCE(sat)
qVB for VBE(sat)
0.1
0.2
0.5
Figure 4. "On" Voltages
VBE, BASE-EMITTER VOLTAGE (VOLTS)
101
10-5
Figure 5. Temperature Coefficients
TJ = -55
C to +135
C
0.4
0.3
0.1
0.8
0.6
0.4
0.2
0
100
10-1
10-2
10-3
10-4
0.2
0
0.1
0.2
0.4
0.3
0.6
0.5
VCE = 30 V
TJ = 125
C
75
C
25
C
IC = ICES
, COLLECTOR CURRENT (A)
I C
V, TEMPERA
TURE COEFFICIENT (mV/
C)
3.0
30
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
C, CAP
ACIT
ANCE (pF)
Figure 6. Switching Time Test Circuit
VR, REVERSE VOLTAGE (VOLTS)
100
1.0
0.2
0.5
1.0
2.0
5.0
10
20
Cibo
70
50
30
20
10
7.0
5.0
3.0
2.0
0.3
0.7
3.0
7.0
Cobo
Figure 7. Capacitances
REVERSE
FORWARD
0.3
1.0
2.0
5.0
10
20
50
100
0.1
0.2
0.5
3.0
30
0.3
10.2 V
Vin
10
s
INPUT PULSE
VBB
-8.8 V
100
RB
5.1 k
0.25
F
Vin
100
1N914
Vout
RC
VCC
30 V
3.0 k
tr, tf
10 ns
DUTY CYCLE = 1.0%
Values Shown are for IC @ 10 mA
TJ = 25
C
2N4410
http://onsemi.com
5
Figure 8. TurnOn Time
IC, COLLECTOR CURRENT (mA)
1000
Figure 9. TurnOff Time
IC, COLLECTOR CURRENT (mA)
0.3
1.0
10
20 30 50
5000
0.5
0.2
t, TIME (ns)
t, TIME (ns)
10
20
30
50
100
200
300
500
2.0
100 200
IC/IB = 10
TJ = 25
C
tr @ VCC = 120 V
50
100
200
300
500
3.0 5.0
tr @ VCC = 30 V
td @ VEB(off) = 1.0 V
VCC = 120 V
3000
2000
1000
0.3
1.0
10
20 30 50
0.5
0.2
2.0
100 200
3.0 5.0
IC/IB = 10
TJ = 25
C
tf @ VCC = 120 V
tf @ VCC = 30 V
ts @ VCC = 120 V