Semiconductor Components Industries, LLC, 2000
May, 2000 Rev. 4
1
Publication Order Number:
2N5060/D
2N5060 Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Annular PNPN devices designed for high volume consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA (TO-92) package
which is readily adaptable for use in automatic insertion equipment.
Sensitive Gate Trigger Current -- 200
A Maximum
Low Reverse and Forward Blocking Current -- 50
A Maximum,
TC = 110
C
Low Holding Current -- 5 mA Maximum
Passivated Surface for Reliability and Uniformity
Device Marking: Device Type, e.g., 2N5060, Date Code
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage(1)
(TJ =
*
40 to 110
C, Sine Wave,
50 to 60 Hz, Gate Open)
2N5060
2N5061
2N5062
2N5064
VDRM,
VRRM
30
60
100
200
Volts
On-State Current RMS
(180
Conduction Angles; TC = 80
C)
IT(RMS)
0.8
Amp
*Average On-State Current
(180
Conduction Angles)
(TC = 67
C)
(TC = 102
C)
IT(AV)
0.51
0.255
Amp
*Peak Non-repetitive Surge Current,
TA = 25
C
(1/2 cycle, Sine Wave, 60 Hz)
ITSM
10
Amps
Circuit Fusing Considerations (t = 8.3 ms)
I2t
0.4
A2s
*Forward Peak Gate Power
(Pulse Width
v
1.0
sec; TA = 25
C)
PGM
0.1
Watt
*Forward Average Gate Power
(TA = 25
C, t = 8.3 ms)
PG(AV)
0.01
Watt
*Forward Peak Gate Current
(Pulse Width
v
1.0
sec; TA = 25
C)
IGM
1.0
Amp
*Reverse Peak Gate Voltage
(Pulse Width
v
1.0
sec; TA = 25
C)
VRGM
5.0
Volts
*Operating Junction Temperature Range
TJ
40 to
+110
C
*Storage Temperature Range
Tstg
40 to
+150
C
*Indicates JEDEC Registered Data.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
0.8 AMPERES RMS
30 thru 200 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
TO92 (TO226AA)
CASE 029
STYLE 10
3
2
1
PIN ASSIGNMENT
1
2
3
Gate
Anode
Cathode
K
G
A
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
2N5060 Series
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, Junction to Case(1)
R
JC
75
C/W
Thermal Resistance, Junction to Ambient
R
JA
200
C/W
*Lead Solder Temperature
(Lead Length
q
1/16
from case, 10 s Max)
--
+230*
C
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current(2)
(VAK = Rated VDRM or VRRM)
TC = 25
C
TC = 110
C
IDRM, IRRM
--
--
--
--
10
50
A
A
ON CHARACTERISTICS
*Peak Forward OnState Voltage(3)
(ITM = 1.2 A peak @ TA = 25
C)
VTM
--
--
1.7
Volts
Gate Trigger Current (Continuous dc)(4)
*(VAK = 7 Vdc, RL = 100 Ohms)
TC = 25
C
TC = 40
C
IGT
--
--
--
--
200
350
A
Gate Trigger Voltage (Continuous dc)(4)
TC = 25
C
*(VAK = 7 Vdc, RL = 100 Ohms)
TC = 40
C
VGT
--
--
--
--
0.8
1.2
Volts
*Gate NonTrigger Voltage
(VAK = Rated VDRM, RL = 100 Ohms)
TC = 110
C
VGD
0.1
--
--
Volts
Holding Current(4)
TC = 25
C
*(VAK = 7 Vdc, initiating current = 20 mA)
TC = 40
C
IH
--
--
--
--
5.0
10
mA
Turn-On Time
Delay Time
Rise Time
(IGT = 1 mA, VD = Rated VDRM,
Forward Current = 1 A, di/dt = 6 A/
s
td
tr
--
--
3.0
0.2
--
--
s
Turn-Off Time
(Forward Current = 1 A pulse,
Pulse Width = 50
s,
0.1% Duty Cycle, di/dt = 6 A/
s,
dv/dt = 20 V/
s, IGT = 1 mA)
2N5060, 2N5061
2N5062, 2N5064
tq
--
--
10
30
--
--
s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffState Voltage
(Rated VDRM, Exponential)
dv/dt
--
30
--
V/
s
*Indicates JEDEC Registered Data.
(1) This measurement is made with the case mounted "flat side down" on a heat sink and held in position by means of a metal clamp over the
curved surface.
(2) RGK = 1000
is included in measurement.
(3) Forward current applied for 1 ms maximum duration, duty cycle
p
1%.
(4) RGK current is not included in measurement.
2N5060 Series
http://onsemi.com
3
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak on State Voltage
IH
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
IRRM at VRRM
(off state)
120
50
60
70
80
90
100
110
0
0.1
0.2
0.3
0.4
130
0.5
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
a
dc
110
30
50
70
90
130
dc
0
0.1
0.2
0.3
0.4
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
T C
, MAXIMUM
ALLOW
ABLE CASE
TEMPERA
TURE ( C)
T A
, MAXIMUM
ALLOW
ABLE
AMBIENT
TEMPERA
TURE ( C)
= 30
= 30
60
90
90
120
120
180
CASE MEASUREMENT
POINT CENTER OF
FLAT PORTION
60
180
TYPICAL PRINTED
CIRCUIT BOARD
MOUNTING
= CONDUCTION ANGLE
= CONDUCTION ANGLE
Figure 1. Maximum Case Temperature
Figure 2. Maximum Ambient Temperature
CURRENT DERATING
2N5060 Series
http://onsemi.com
4
P
(A
V)
, MAXIMUM
A
VERAGE
POWER
DISSIP
A
TION (W
A
TTS)
5.0
0.05
0.01
0.02
0
0.5
1.0
1.5
2.0
3.0
2.5
vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
0.07
0.03
0.1
0.2
0.3
0.5
0.7
1.0
2.0
5.0
25
C
TJ = 110
C
30
7.0
1.0
3.0
2.0
10
1.0
2.0
3.0
5.0 7.0
10
20
50 70
100
0
0.2
0.4
0.6
a
0.1
0.4
dc
0.8
0
0.2
0.5
= CONDUCTION ANGLE
0.3
NUMBER OF CYCLES
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
i T
, INST
ANT
ANEOUS
ON-ST
A
TE
CURRENT
(AMP)
I TSM
, PEAK SURGE CURRENT
(AMP)
= 30
60
90
120
180
Figure 3. Typical Forward Voltage
Figure 4. Maximum NonRepetitive Surge Current
Figure 5. Power Dissipation
0.02
0.2
20
10
5.0
2.0
1.0
0.05
0.01
0.002
0.005
0.5
0.02
0.01
0.5
0.1
0.05
0.1
0.2
t, TIME (SECONDS)
1.0
r(t), TRANSIENT
THERMAL
RESIST
ANCE NORMALIZED
Figure 6. Thermal Response
CURRENT DERATING
2N5060 Series
http://onsemi.com
5
0.7
0.3
0.4
0.5
0.6
0.8
VAK = 7.0 V
RL = 100
RGK = 1.0 k
3.0
0.8
0.4
0.6
1.0
2.0
50
0
75
50
25
4.0
25
100
75
110
TJ, JUNCTION TEMPERATURE (
C)
2N5060,61
100
VAK = 7.0 V
RL = 100
RGK = 1.0 k
0.2
0.5
1.0
2.0
5.0
10
20
50
200
VAK = 7.0 V
RL = 100
2N5062-64
2N5060-61
TYPICAL CHARACTERISTICS
50
0
75
50
25
25
100
75
110
TJ, JUNCTION TEMPERATURE (
C)
50
0
75
50
25
25
100
75
110
TJ, JUNCTION TEMPERATURE (
C)
V
G
, GA
TE
TRIGGER
VOL
T
AGE
(VOL
TS)
I GT
, GA
TE
TRIGGER
CURRENT
(NORMALIZED)
I H
, HOLDING CURRENT
(NORMALIZED)
Figure 7. Typical Gate Trigger Voltage
Figure 8. Typical Gate Trigger Current
Figure 9. Typical Holding Current
2N5062-64
PDF 
ZIP