Document:
Amplifier Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
50
Vdc
CollectorBase Voltage
VCBO
50
Vdc
EmitterBase Voltage
VEBO
3.0
Vdc
Collector Current -- Continuous
IC
50
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
--
Vdc
CollectorBase Breakdown Voltage
(IC = 100
Adc, IE = 0)
V(BR)CBO
50
--
Vdc
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
ICBO
--
50
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
--
50
nAdc
1. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
November, 2001 Rev. 1
1
Publication Order Number:
2N5087/D
2N5087
ON Semiconductor Preferred Device
CASE 2911, STYLE 1
TO92 (TO226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
2N5087
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ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100
Adc, VCE = 5.0 Vdc)
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)(1)
hFE
250
250
250
800
--
--
--
CollectorEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
--
0.3
Vdc
BaseEmitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
--
0.85
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
(IC = 500
Adc, VCE = 5.0 Vdc, f = 20 MHz)
fT
40
--
MHz
CollectorBase Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
--
4.0
pF
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
250
900
--
Noise Figure
(IC = 20
Adc, VCE = 5.0 Vdc, RS = 1.0 k
, f = 1.0 kHz)
(IC = 100
Adc, VCE = 5.0 Vdc, RS = 3.0 k
, f = 1.0 kHz)
NF
--
--
2.0
2.0
dB
1. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25
C)
Figure 1. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
3.0
Figure 2. Noise Current
f, FREQUENCY (Hz)
1.0
10
20
50 100
200
500 1.0 k 2.0 k
5.0 k 10 k
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.1
BANDWIDTH = 1.0 Hz
RS
0
IC = 10
A
100
A
e n
, NOISE VOL
T
AGE (nV)
I n
, NOISE CURRENT (pA)
30
A
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
300
A
100
A
30
A
10
A
10
20
50
100 200
500
1.0 k 2.0 k
5.0 k 10 k
2.0 1.0 mA
0.2
300
A
2N5087
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NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25
C)
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
Figure 3. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (
A)
Figure 4. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (
A)
10
0.5 dB
BANDWIDTH = 1.0 Hz
R S
, SOURCE RESIST
ANCE (OHMS)
R S
, SOURCE RESIST
ANCE (OHMS)
Figure 5. Wideband
IC, COLLECTOR CURRENT (
A)
10
10 Hz to 15.7 kHz
R S
, SOURCE RESIST
ANCE (OHMS)
Noise Figure is Defined as:
NF
+
20 log10
en2
)
4KTRS
)
In
2RS2
4KTRS
1 2
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman's Constant (1.38 x 1023 j/
K)
= Temperature of the Source Resistance (
K)
= Source Resistance (Ohms)
en
In
K
T
RS
1.0 dB
2.0 dB
3.0 dB
20 30
50 70 100
200 300
500 700 1.0 k
10
20 30
50 70 100
200 300
500 700 1.0 k
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
20 30
50 70 100
200 300
500 700 1.0 k
BANDWIDTH = 1.0 Hz
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
2N5087
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TYPICAL STATIC CHARACTERISTICS
Figure 6. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.003
h , DC CURRENT GAIN FE
TJ = 125
C
-55
C
25
C
VCE = 1.0 V
VCE = 10 V
Figure 7. Collector Saturation Region
IC, COLLECTOR CURRENT (mA)
1.4
Figure 8. Collector Characteristics
IC, COLLECTOR CURRENT (mA)
V
,
VOL
T
AGE (VOL
TS)
1.0
2.0
5.0
10
20
50
1.6
100
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
*qVC for VCE(sat)
qVB for VBE
0.1
0.2
0.5
Figure 9. "On" Voltages
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0
V CE
, COLLECTOR-EMITTER VOL
T
AGE (VOL
TS)
0.002
TA = 25
C
IC = 1.0 mA
10 mA
100 mA
Figure 10. Temperature Coefficients
50 mA
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
60
80
100
20
0
0
I C
, COLLECTOR CURRENT (mA)
TA = 25
C
PULSE WIDTH = 300
s
DUTY CYCLE
2.0%
IB = 400
A
350
A
300
A
250
A
200
A
*APPLIES for IC/IB
hFE/2
25
C to 125
C
-55
C to 25
C
25
C to 125
C
-55
C to 25
C
40
60
0.005
0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
0.005 0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
5.0
10
15
20
25
30
35
40
1.2
1.0
0.8
0.6
0.4
0.2
0
2.4
0.8
0
1.6
0.8
1.0
2.0
5.0
10
20
50 100
0.1
0.2
0.5
200
100
80
V, TEMPERA
TURE COEFFICIENTS (mV/
C)
150
A
100
A
50
A
2N5087
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TYPICAL DYNAMIC CHARACTERISTICS
C, CAP
ACIT
ANCE (pF)
Figure 11. TurnOn Time
IC, COLLECTOR CURRENT (mA)
500
Figure 12. TurnOff Time
IC, COLLECTOR CURRENT (mA)
2.0
5.0
10
20
30
50
1000
Figure 13. CurrentGain -- Bandwidth Product
IC, COLLECTOR CURRENT (mA)
Figure 14. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 16. Output Admittance
IC, COLLECTOR CURRENT (mA)
3.0
1.0
500
0.5
10
t, TIME (ns)
t, TIME (ns)
f, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) T
h , OUTPUT
ADMITT
ANCE ( mhos)
oe
m
h ie
, INPUT IMPEDANCE (k
)
5.0
7.0
10
20
30
50
70
100
300
7.0
70 100
VCC = 3.0 V
IC/IB = 10
TJ = 25
C
td @ VBE(off) = 0.5 V
tr
10
20
30
50
70
100
200
300
500
700
-2.0
-1.0
VCC = -3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25
C
ts
tf
50
70
100
200
300
0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
TJ = 25
C
VCE = 20 V
5.0 V
1.0
2.0
3.0
5.0
7.0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
0.05
Cib
Cob
2.0
5.0
10
20
50
1.0
0.2
100
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
0.1
0.2
0.5
VCE = -10 Vdc
f = 1.0 kHz
TA = 25
C
2.0
5.0
10
20
50
1.0
2.0
100
3.0
5.0
7.0
10
20
30
50
70
100
200
0.1
0.2
0.5
VCE = 10 Vdc
f = 1.0 kHz
TA = 25
C
200
-3.0 -5.0 -7.0
-20
-10
-30
-50 -70 -100
TJ = 25
C
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