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JFET Amplifiers
PChannel -- Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainGate Voltage
VDG
40
Vdc
Reverse GateSource Voltage
VGSR
40
Vdc
Forward Gate Current
IG(f)
10
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
350
2.8
mW
mW/
C
Junction Temperature Range
TJ
65 to +135
C
Storage Channel Temperature Range
Tstg
65 to +150
C
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
GateSource Breakdown Voltage
(IG = 10
Adc, VDS = 0)
2N5460, 2N5461, 2N5462
V(BR)GSS
40
--
--
Vdc
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
2N5460, 2N5461, 2N5462
(VGS = 30 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100
C)
2N5460, 2N5461, 2N5462
(VGS = 30 Vdc, VDS = 0, TA = 100
C)
IGSS
--
--
--
--
5.0
1.0
nAdc
Adc
GateSource Cutoff Voltage
2N5460
(VDS = 15 Vdc, ID = 1.0
Adc)
2N5461
2N5462
VGS(off)
0.75
1.0
1.8
--
--
--
6.0
7.5
9.0
Vdc
GateSource Voltage
(VDS = 15 Vdc, ID = 0.1 mAdc)
2N5460
(VDS = 15 Vdc, ID = 0.2 mAdc)
2N5461
(VDS = 15 Vdc, ID = 0.4 mAdc)
2N5462
VGS
0.5
0.8
1.5
--
--
--
4.0
4.5
6.0
Vdc
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
November, 2001 Rev. 3
1
Publication Order Number:
2N5460/D
2N5460
2N5461
2N5462
CASE 2911, STYLE 7
TO92 (TO226AA)
1
2
3
2 DRAIN
1 SOURCE
3
GATE
2N5460 2N5461 2N5462
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Unit
Max
Typ
Min
Symbol
ON CHARACTERISTICS
ZeroGateVoltage Drain Current
2N5460
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
2N5461
2N5462
IDSS
1.0
2.0
4.0
--
--
--
5.0
9.0
16
mAdc
SMALLSIGNAL CHARACTERISTICS
Forward Transfer Admittance
2N5460
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
2N5461
2N5462
yfs
1000
1500
2000
--
--
--
4000
5000
6000
m
mhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
yos
--
--
75
m
mhos
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
--
5.0
7.0
pF
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
--
1.0
2.0
pF
FUNCTIONAL CHARACTERISTICS
Equivalent ShortCircuit Input Noise Voltage
(VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz)
en
--
60
115
nV
Hz
Figure 1.
2N5460 2N5461 2N5462
http://onsemi.com
3
Y fs
FOR
W
ARD
TRANSFER
ADMITT
ANCE (
mhos)
m
Y fs
FOR
W
ARD
TRANSFER
ADMITT
ANCE (
mhos)
m
DRAIN CURRENT versus GATE
SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE
versus DRAIN CURRENT
I D
, DRAIN CURRENT
(mA)
Y fs
FOR
W
ARD
TRANSFER
ADMITT
ANCE (
mhos)
m
4.0
4000
0
0.2
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 1. VGS(off) = 2.0 Volts
1.0
ID, DRAIN CURRENT (mA)
3.5
I D
, DRAIN CURRENT
(mA)
10
10000
0
1.0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 2. VGS(off) = 4.0 Volts
ID, DRAIN CURRENT (mA)
I D
, DRAIN CURRENT
(mA)
16
10000
0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 3. VGS(off) = 5.0 Volts
ID, DRAIN CURRENT (mA)
Figure 4. VGS(off) = 2.0 Volts
Figure 5. VGS(off) = 4.0 Volts
Figure 6. VGS(off) = 5.0 Volts
3.0
2.5
2.0
1.5
1.0
0.5
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8 2.0
VDS = 15 V
200
300
500
700
1000
2000
3000
0.2
0.3
0.5
0.7
2.0
3.0 4.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0.5
1.5
2.0
2.5
3.0
3.5
4.0
500
700
1000
2000
3000
5000
7000
0.5
0.7
1.0
2.0
3.0
5.0
7.0
14
12
10
8.0
6.0
4.0
2.0
0
1.0
2.0
3.0
8.0
4.0
5.0
6.0
7.0
500
700
1000
2000
3000
5000
7000
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
TA = -55
C
25
C
125
C
VDS = 15 V
f = 1.0 kHz
VDS = 15 V
TA = -55
C
25
C
125
C
VDS = 15 V
TA = -55
C
25
C
125
C
VDS = 15 V
f = 1.0 kHz
VDS = 15 V
f = 1.0 kHz
2N5460 2N5461 2N5462
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4
1000
0.1
0.2
ID, DRAIN CURRENT (mA)
Figure 7. Output Resistance
versus Drain Current
10
0.5
1.0
2.0
5.0
10
r oss
, OUTPUT
RESIST
ANCE (k ohms)
C, CAP
ACIT
ANCE (pF)
10
0
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 8. Capacitance versus
DrainSource Voltage
0
NF
, NOISE FIGURE (dB)
10
RS, SOURCE RESISTANCE (k Ohms)
Figure 9. Noise Figure versus
Source Resistance
0
Figure 10. Equivalent Low Frequency Circuit
20
30
50
70
100
200
300
500
700
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
20
30
40
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
1.0
10
100
1000
10,000
NOTE:
1. Graphical data is presented for dc conditions. Tabular
data is given for pulsed conditions (Pulse Width = 630 ms,
Duty Cycle = 10%).
*Cosp is Coss in parallel with Series Combination of Ciss and Crss.
vi
Crss
Ciss
ross
Coss
| yfs | vi
COMMON SOURCE
y PARAMETERS FOR FREQUENCIES
BELOW 30 MHz
yis = j
Ciss
yos = j
Cosp * + 1/ross
yfs = yfs |
yrs = -j
Crss
VDS = 15 V
f = 1.0 kHz
IDSS = 3.0 mA
6.0 mA
10 mA
f = 1.0 MHz
VGS = 0
Ciss
Coss
Crss
VDS = 15 V
VGS = 0
f = 100 Hz
2N5460 2N5461 2N5462
http://onsemi.com
5
PACKAGE DIMENSIONS
CASE 2911
ISSUE AL
TO92 (TO226AA)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.021
0.407
0.533
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
STYLE 7:
PIN 1. SOURCE
2. DRAIN
3. GATE
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