Semiconductor Components Industries, LLC, 2004
June, 2004 - Rev. 3
1
Publication Order Number:
2N5550/D
2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
Pb-Free Packages are Available*
Device Marking: Device Type, e.g., 2N5550, Date Code
MAXIMUM RATINGS
Rating
Symbol
2N5550
2N5551
Unit
Collector - Emitter Voltage
V
CEO
140
160
Vdc
Collector - Base Voltage
V
CBO
160
180
Vdc
Emitter - Base Voltage
V
EBO
6.0
Vdc
Collector Current - Continuous
I
C
600
mAdc
Total Device Dissipation
@ T
A
= 25
C
Derate above 25
C
P
D
625
5.0
mW
mW/
C
Total Device Dissipation
@ T
C
= 25
C
Derate above 25
C
P
D
1.5
12
W
mW/
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
-55 to +150
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction-to-Ambient
R
q
JA
200
C/W
Thermal Resistance,
Junction-to-Case
R
q
JC
83.3
C/W
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
TO-92
CASE 29
STYLE 1
1 2
3
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
55xx
Specific Device Code
Y
= Year
WW
= Work Week
MARKING
DIAGRAM
2N
55xx
YWW
2N5550, 2N5551
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0)
2N5550
2N5551
V
(BR)CEO
140
160
-
-
Vdc
Collector-Base Breakdown Voltage
(I
C
= 100
m
Adc, I
E
= 0 )
2N5550
2N5551
V
(BR)CBO
160
180
-
-
Vdc
Emitter-Base Breakdown Voltage
(I
E
= 10
m
Adc, I
C
= 0)
V
(BR)EBO
6.0
-
Vdc
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
2N5550
(V
CB
= 120 Vdc, I
E
= 0)
2N5551
(V
CB
= 100 Vdc, I
E
= 0, T
A
= 100
C)
2N5550
(V
CB
= 120 Vdc, I
E
= 0, T
A
= 100
C)
2N5551
I
CBO
-
-
-
-
100
50
100
50
nAdc
m
Adc
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
-
50
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
2N5550
2N5551
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
2N5550
2N5551
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc)
2N5550
2N5551
h
FE
60
80
60
80
20
30
-
-
250
250
-
-
-
Collector-Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
Both Types
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
2N5550
2N5551
V
CE(sat)
-
-
-
0.15
0.25
0.20
Vdc
Base-Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
Both Types
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
2N5550
2N5551
V
BE(sat)
-
-
-
1.0
1.2
1.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -- Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
f
T
100
300
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
-
6.0
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
2N5550
2N5551
C
ibo
-
-
30
20
pF
Small-Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
50
200
-
Noise Figure
(I
C
= 250
m
Adc, V
CE
= 5.0 Vdc, R
S
= 1.0 k
W
,
2N5550
f = 1.0 kHz)
2N5551
NF
-
-
10
8.0
dB
1. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
2N5550, 2N5551
http://onsemi.com
3
ORDERING INFORMATION
Device
Package
Shipping
2N5550
TO-92
5,000 Unit / Bulk
2N5550RLRA
TO-92
2,000 Tape & Reel
2N5550RLRP
TO-92
2,000 Tape & Ammo Box
2N5550RLRPG
TO-92
(Pb-Free)
2,000 Tape & Ammo Box
2N5551
TO-92
5,000 Unit / Bulk
2N5551G
TO-92
(Pb-Free)
5,000 Unit / Bulk
2N5551RL1
TO-92
2,000 Tape & Reel
2N5551RLRA
TO-92
2,000 Tape & Reel
2N5551RLRM
TO-92
2,000 Tape & Ammo Box
2N5551RLRP
TO-92
2,000 Tape & Ammo Box
2N55551ZL1
TO-92
2,000 Tape & Ammo Box
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifica-
tions Brochure, BRD8011/D.
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
500
h , DC CURRENT GAIN
FE
T
J
= 125
C
-55
C
25
C
5.0
10
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
30
20
300
100
50
7.0
V
CE
= 1.0 V
V
CE
= 5.0 V
2N5550, 2N5551
http://onsemi.com
4
Figure 2. Collector Saturation Region
I
B
, BASE CURRENT (mA)
1.0
I
C
= 1.0 mA
0
0.3
0.005
0.01
0.2
0.5
1.0
2.0
20
50
0.8
0.5
0.4
0.9
0.7
0.6
0.2
0.02
0.05
0.1
10
V CE
, COLLECTOR-EMITTER VOL
T
AGE (VOL
TS)
0.1
10 mA
30 mA
100 mA
5.0
Figure 3. Collector Cut-Off Region
I
C
, COLLECTOR CURRENT (mA)
1.0
I
C
, COLLECTOR CURRENT (mA)
V
,
VOL
T
AGE (VOL
TS)
1.0
2.0
5.0
10
20
50
2.5
100
T
J
= 25
C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
q
VC
for V
CE(sat)
q
VB
for V
BE(sat)
0.1
0.2
0.5
Figure 4. "On" Voltages
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
10
1
10
-5
Figure 5. Temperature Coefficients
T
J
= - 55
C to +135
C
0.4
0.3
0.1
0.8
0.6
0.4
0.2
0
10
0
10
-1
10
-2
10
-3
10
-4
0.2
0
0.1
0.2
0.4
0.3
0.6
0.5
V
CE
= 30 V
T
J
= 125
C
75
C
25
C
I
C
= I
CES
, COLLECTOR CURRENT (A)
I C
V, TEMPERA
TURE COEFFICIENT (mV/
C)
3.0
30
2.0
1.5
1.0
0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
REVERSE
FORWARD
0.3
1.0
2.0
5.0
10
20
50
100
0.1
0.2
0.5
3.0
30
0.3
2N5550, 2N5551
http://onsemi.com
5
C, CAP
ACIT
ANCE (pF)
Figure 6. Switching Time Test Circuit
V
R
, REVERSE VOLTAGE (VOLTS)
100
1.0
0.2
0.5
1.0
2.0
5.0
10
20
C
ibo
70
50
30
20
10
7.0
5.0
3.0
2.0
0.3
0.7
3.0
7.0
C
obo
Figure 7. Capacitances
10.2 V
V
in
10 ms
INPUT PULSE
V
BB
-8.8 V
100
R
B
5.1 k
0.25 mF
V
in
100
1N914
V
out
R
C
V
CC
30 V
3.0 k
t
r
, t
f
10 ns
DUTY CYCLE = 1.0%
Values Shown are for I
C
@ 10 mA
T
J
= 25
C
Figure 8. Turn-On Time
I
C
, COLLECTOR CURRENT (mA)
1000
Figure 9. Turn-Off Time
I
C
, COLLECTOR CURRENT (mA)
0.3
1.0
10
20 30 50
5000
0.5
0.2
t, TIME (ns)
t, TIME (ns)
10
20
30
50
100
200
300
500
2.0
100
200
I
C
/I
B
= 10
T
J
= 25
C
t
r
@ V
CC
= 120 V
50
100
200
300
500
3.0 5.0
t
r
@ V
CC
= 30 V
t
d
@ V
EB(off)
= 1.0 V
V
CC
= 120 V
3000
2000
1000
0.3
1.0
10
20 30 50
0.5
0.2
2.0
100
200
3.0 5.0
I
C
/I
B
= 10
T
J
= 25
C
t
f
@ V
CC
= 120 V
t
f
@ V
CC
= 30 V
t
s
@ V
CC
= 120 V
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