Semiconductor Components Industries, LLC, 2001
September, 2001 Rev. 3
1
Publication Order Number:
2N5638/D
2N5638, 2N5639
2N5638 is a Preferred Device
JFET Chopper Transistors
NChannel Depletion
NChannel Junction Field Effect Transistors, depletion mode (Type
A) designed for chopper and highspeed switching applications.
Low DrainSource "ON" Resistance:
RDS(on) = 30
for 2N5638
RDS(on) = 60
for 2N5639
Low Reverse Transfer Capacitance
Crss = 4.0 pF (Max) @ f = 1.0 MHz
Fast Switching Characteristics
tr = 5.0 ns (Max) (2N5638)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDS
30
Vdc
DrainGate Voltage
VDG
30
Vdc
Reverse GateSource Voltage
VGSR
30
Vdc
Forward Gate Current
IGF
10
mAdc
Total Device Dissipation
@ TA = 25
C
Derate above 25
C
PD
310
2.82
mW
mW/
C
Storage Temperature Range
Tstg
65 to +150
C
Operating Junction Temp Range
TJ
65 to +135
C
INPUT
(SCOPE A)
OUTPUT
(SCOPE B)
PULSE
GENERATOR
VDD = 10 Vdc
0.1
m
F
0.001
m
F
50 Ohms
50
RL
+
TO
50 OHM
SCOPE A
TO
50 OHM
SCOPE B
RL
+
VDD
ID
*
(RDS(on)
)
50)
50
50
1.0 k
SCOPE
TEKTRONIX 567A
OR EQUIVALENT
Figure 1. Switching Times Test Circuit
VGS(on)
VGS(off)
10%
10%
90%
90%
td(off)
tr
td(on)
tf
Device
Package
Shipping
ORDERING INFORMATION
2N5638RLRA
TO92
TO92
CASE 29
STYLE 5
2000/Tape & Reel
3
2
1
Preferred devices are recommended choices for future use
and best overall value.
2N5639
TO92
5000/Box
2N5369RLRA
TO92
2000/Tape & Reel
Y
= Year
WW
= Work Week
MARKING DIAGRAMS
2N
5638
YWW
2N
5639
YWW
http://onsemi.com
1 DRAIN
2 SOURCE
3
GATE
2N5638, 2N5639
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
GateSource Breakdown Voltage
(IG = 1.0
Adc, VDS = 0)
V(BR)GSS
35
Vdc
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100
C)
IGSS
1.0
1.0
nAdc
Adc
DrainCutoff Current
(VDS = 15 Vdc, VGS = 12 Vdc)
2N5638
(VDS = 15 Vdc, VGS = 12 Vdc, TA = 100
C) 2N5638
(VDS = 15 Vdc, VGS = 8.0 Vdc)
2N5639
(VDS = 15 Vdc, VGS = 8.0 Vdc, TA = 100
C) 2N5639
ID(off)
1.0
1.0
1.0
1.0
Adc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current (Note 1.)
2N5638
(VDS = 20 Vdc, VGS = 0)
2N5639
IDSS
50
25
mAdc
DrainSource "ON" Voltage
(ID = 12 mAdc, VGS = 0)
2N5638
(ID = 6.0 mAdc, VGS = 0)
2N5639
VDS(on)
0.5
0.5
Vdc
Static DrainSource "ON" Resistance
(ID = 1.0 mAdc, VGS = 0)
2N5638
2N5639
RDS(on)
30
60
SMALLSIGNAL CHARACTERISTICS
Static DrainSource "ON" Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
2N5638
2N5639
RDS(on)
30
60
Input Capacitance
(VDS = 0, VGS = 12 Vdc, f = 1.0 MHz)
Ciss
10
pF
Reverse Transfer Capacitance
(VDS = 0, VGS = 12 Vdc, f = 1.0 MHz)
Crss
4.0
pF
SWITCHING CHARACTERISTICS
(VDD = 10 Vdc, VGS(on) = 0, VGS(off) = 10 Vdc, RG' = 50
. See Figure 1 on page 1)
TurnOn Delay Time
ID(on) = 12 mAdc, 2N5638
ID(on) = 6.0 mAdc, 2N5639
td(on)
4.0
6.0
ns
Rise Time
ID(on) = 12 mAdc, 2N5638
ID(on) = 6.0 mAdc, 2N5639
tr
5.0
8.0
ns
TurnOff Delay Time
ID(on) = 12 mAdc, 2N5638
ID(on) = 6.0 mAdc, 2N5639
td(off)
5.0
10
ns
Fall Time
ID(on) = 12 mAdc, 2N5638
ID(on) = 6.0 mAdc, 2N5639
tf
10
20
ns
1. Pulse Width
300
s, Duty Cycle
3.0%.
2N5638, 2N5639
http://onsemi.com
3
PACKAGE DIMENSIONS
CASE 2911
ISSUE AL
TO92 (TO226)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.021
0.407
0.533
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
2N5638, 2N5639
http://onsemi.com
4
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2N5638/D
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