Plastic NPN Silicon
High-Voltage Power Transistor
. . . designed for use in lineoperated equipment such as audio
output amplifiers; lowcurrent, highvoltage converters; and AC line
relays.
Excellent DC Current Gain
hFE = 30250 @ IC = 100 mAdc
CurrentGain Bandwidth Product
fT = 10 MHz (Min) @ IC = 50 mAdc
MAXIMUM RATINGS (1)
Rating
Symbol
2N5655
2N5657
Unit
CollectorEmitter Voltage
VCEO
250
350
Vdc
CollectorBase Voltage
VCB
275
375
Vdc
EmitterBase Voltage
VEB
6.0
Vdc
Collector Current Continuous
Peak
IC
0.5
1.0
Adc
Base Current
IB
0.25
Adc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
20
0.16
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
6.25
_
C/W
(1) Indicates JEDEC Registered Data.
40
0
25
50
75
100
150
Figure 1. Power Derating
TC, CASE TEMPERATURE (
C)
30
20
10
P D
, POWER DISSIP
A
TION (W
A
TTS)
125
Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.
Figure 2. Sustaining Voltage Test Circuit
50 mH
200
50 V
+
-
+
X
Y
TO SCOPE
Hg RELAY
300
1.0
6.0 V
ON Semiconductor
)
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 7
1
Publication Order Number:
2N5655/D
2N5655
2N5657
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
250350 VOLTS
20 WATTS
CASE 7709
TO225AA TYPE
3
2 1
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
2N5655 2N5657
http://onsemi.com
2
*ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
2N5655
(IC = 100 mAdc (inductive), L = 50 mH)
2N5657
VCEO(sus)
250
350
Vdc
CollectorEmitter Breakdown Voltage
2N5655
(IC = 1.0 mAdc, IB = 0)
2N5657
V(BR)CEO
250
350
Vdc
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
2N5655
(VCE = 250 Vdc, IB = 0)
2N5657
ICEO
0.1
0.1
mAdc
Collector Cutoff Current
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc)
2N5655
(VCE = 350 Vdc, VEB(off) = 1.5 Vdc)
2N5657
(VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100
_
C)
2N5655
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100
_
C)
2N5657
ICEX
0.1
0.1
1.0
1.0
mAdc
Collector Cutoff Current
(VCB = 275 Vdc, IE = 0)
2N5655
(VCB = 375 Vdc, IE = 0)
2N5657
ICBO
10
10
Adc
Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)
IEBO
10
Adc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 250 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE
25
30
15
5.0
250
CollectorEmitter Saturation Voltage (1)
(IC = 100 mAdc, IB = 10 mAdc)
(IC = 250 mAdc, IB = 25 mAdc)
(IC = 500 mAdc, IB = 100 mAdc)
VCE(sat)
1.0
2.5
10
Vdc
BaseEmitter Voltage (1)
(IC = 100 mAdc, VCE = 10 Vdc)
VBE
1.0
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (2)
(IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz)
fT
10
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
25
pF
SmallSignal Current Gain (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
*Indicates JEDEC Registered Data for 2N5655 Series.
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
(2) fT is defined as the frequency at which |hfe| extrapolates to unity.
1.0
20
Figure 3. ActiveRegion Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.5
0.2
0.1
0.01
30 40
60
100
200
300 400
600
Second Breakdown Limit
Thermal Limit @ TC = 25
C
Bonding Wire Limit
I C
, COLLECT
OR CURRENT
(AMP)
Curves apply below rated VCEO
TJ = 150
C
d
c
1.0 ms
0.05
0.02
10
s
2N5655
2N5657
500
s
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
2N5655 2N5657
http://onsemi.com
3
Figure 4. Current Gain
IC, COLLECTOR CURRENT (mA)
300
10
1.0
200
100
70
50
30
2.0
3.0
5.0
7.0
30
50
70
100
200
300
500
10
20
h FE
, DC CURRENT
GAIN
20
TJ = +150
C
+25
C
-55
C
VCE = 10 V
VCE = 2.0 V
+100
C
1.0
10
IC, COLLECTOR CURRENT (mA)
0.8
0.6
0.4
0
20
50
100
200 300
500
VBE(sat) @ IC/IB = 10
V
,
VOL
T
AGE (VOL
TS)
0.2
30
VBE @ VCE = 10 V
VCE(sat) @ IC/IB = 10
IC/IB = 5.0
TJ = +25
C
Figure 5. "On" Voltages
300
0.1
VR, REVERSE VOLTAGE (VOLTS)
10
2.0
5.0
10
20
50
100
0.2
0.5
1.0
C, CAP
ACIT
ANCE (pF)
200
70
50
30
Cib
Cob
100
20
TJ = +25
C
Figure 6. Capacitance
10
1.0
Figure 7. TurnOn Time
IC, COLLECTOR CURRENT (mA)
t, TIME
(s)
5.0
2.0
1.0
0.5
0.2
0.1
0.01
2.0
5.0
10
20
50
100
500
0.05
0.02
200
tr
IC/IB = 10
VCC = 300 V, VBE(off) = 2.0 V
(2N5657, only)
VCC = 100 V, VBE(off) = 0 V
td
10
1.0
Figure 8. TurnOff Time
IC, COLLECTOR CURRENT (mA)
t, TIME
(s)
5.0
2.0
1.0
0.5
0.2
0.1
2.0
5.0
10
20
50
100
500
200
ts
IC/IB = 10
tf
VCC = 100 V
VCC = 300 V
(Type 2N5657, only)
2N5655 2N5657
http://onsemi.com
4
PACKAGE DIMENSIONS
CASE 7709
ISSUE W
TO225AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B
A
M
K
F
C
Q
H
V
G
S
D
J
R
U
1
3
2
2 PL
M
A
M
0.25 (0.010)
B
M
M
A
M
0.25 (0.010)
B
M
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.425
0.435
10.80
11.04
B
0.295
0.305
7.50
7.74
C
0.095
0.105
2.42
2.66
D
0.020
0.026
0.51
0.66
F
0.115
0.130
2.93
3.30
G
0.094 BSC
2.39 BSC
H
0.050
0.095
1.27
2.41
J
0.015
0.025
0.39
0.63
K
0.575
0.655
14.61
16.63
M
5 TYP
5 TYP
Q
0.148
0.158
3.76
4.01
R
0.045
0.065
1.15
1.65
S
0.025
0.035
0.64
0.88
U
0.145
0.155
3.69
3.93
V
0.040
---
1.02
---
_
_
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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2N5655/D
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