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Электронный компонент: 2N6027RLRM

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Semiconductor Components Industries, LLC, 2000
May, 2000 Rev. 2
1
Publication Order Number:
2N6027/D
2N6027, 2N6028
Preferred Device
Programmable
Unijunction Transistor
Programmable Unijunction
Transistor Triggers
Designed to enable the engineer to "program'' unijunction
characteristics such as RBB,
, IV, and IP by merely selecting two
resistor values. Application includes thyristortrigger, oscillator, pulse
and timing circuits. These devices may also be used in special thyristor
applications due to the availability of an anode gate. Supplied in an
inexpensive TO92 plastic package for highvolume requirements,
this package is readily adaptable for use in automatic insertion
equipment.
Programmable -- RBB,
, IV and IP
Low OnState Voltage -- 1.5 Volts Maximum @ IF = 50 mA
Low Gate to Anode Leakage Current -- 10 nA Maximum
High Peak Output Voltage -- 11 Volts Typical
Low Offset Voltage -- 0.35 Volt Typical (RG = 10 k ohms)
Device Marking: Logo, Device Type, e.g., 2N6027, Date Code
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
*Power Dissipation
Derate Above 25
C
PF
1/
JA
300
4.0
mW
mW/
C
*DC Forward Anode Current
Derate Above 25
C
IT
150
2.67
mA
mA/
C
*DC Gate Current
IG
"
50
mA
Repetitive Peak Forward Current
100
s Pulse Width, 1% Duty Cycle
*20
s Pulse Width, 1% Duty Cycle
ITRM
1.0
2.0
Amps
NonRepetitive Peak Forward Current
10
s Pulse Width
ITSM
5.0
Amps
*Gate to Cathode Forward Voltage
VGKF
40
Volts
*Gate to Cathode Reverse Voltage
VGKR
*
5.0
Volts
*Gate to Anode Reverse Voltage
VGAR
40
Volts
*Anode to Cathode Voltage(1)
VAK
"
40
Volts
Operating Junction Temperature Range
TJ
50 to
+100
C
*Storage Temperature Range
Tstg
55 to
+150
C
*Indicates JEDEC Registered Data
(1) Anode positive, RGA = 1000 ohms
Anode negative, RGA = open
PUTs
40 VOLTS
300 mW
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
K
G
A
TO92 (TO226AA)
CASE 029
STYLE 16
3
2
1
PIN ASSIGNMENT
1
2
3
Gate
Cathode
Anode
2N6027, 2N6028
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
75
C/W
Thermal Resistance, Junction to Ambient
R
JA
200
C/W
Maximum Lead Temperature for Soldering Purposes
(
t
1/16
from case, 10 secs max)
TL
260
C
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted.)
Characteristic
Fig. No.
Symbol
Min
Typ
Max
Unit
*Peak Current
(VS = 10 Vdc, RG = 1 M
)
2N6027
2N6028
(VS = 10 Vdc, RG = 10 k ohms
)
2N6027
2N6028
2,9,11
IP
--
--
--
--
1.25
0.08
4.0
0.70
2.0
0.15
5.0
1.0
A
*Offset Voltage
(VS = 10 Vdc, RG = 1 M
)
2N6027
2N6028
(VS = 10 Vdc, RG = 10 k ohms
)
(Both Types)
1
VT
0.2
0.2
0.2
0.70
0.50
0.35
1.6
0.6
0.6
Volts
*Valley Current
(VS = 10 Vdc, RG = 1 M
)
2N6027
2N6028
(VS = 10 Vdc, RG = 10 k ohms
)
2N6027
2N6028
(VS = 10 Vdc, RG = 200 ohms
)
2N6027
2N6028
1,4,5
IV
--
--
70
25
1.5
1.0
18
18
150
150
--
--
50
25
--
--
--
--
A
mA
*Gate to Anode Leakage Current
(VS = 40 Vdc, TA = 25
C, Cathode Open)
(VS = 40 Vdc, TA = 75
C, Cathode Open)
--
IGAO
--
--
1.0
3.0
10
--
nAdc
Gate to Cathode Leakage Current
(VS = 40 Vdc, Anode to Cathode Shorted)
--
IGKS
--
5.0
50
nAdc
*Forward Voltage (IF = 50 mA Peak)(1)
1,6
VF
--
0.8
1.5
Volts
*Peak Output Voltage
(VG = 20 Vdc, CC = 0.2
F)
3,7
Vo
6.0
11
--
Volt
Pulse Voltage Rise Time
(VB = 20 Vdc, CC = 0.2
F)
3
tr
--
40
80
ns
*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width
300
sec, Duty Cycle
2%.
2N6027, 2N6028
http://onsemi.com
3
K
G
A
Programmable Unijunction
with "Program" Resistors
R1 and R2
1A
VAK
+VB
IA
R1
R1 + R2
R1
R2
VS =
VB
VAK
IA
+
VS
RG
RG =
R1 R2
R1 + R2
Equivalent Test Circuit for
Figure 1A used for electrical
characteristics testing
(also see Figure 2)
1B
Adjust
for
Turnon
Threshold
100k
1.0%
2N5270
VB
0.01
F
20
R
R
RG = R/2
VS = VB/2
(See Figure 1)
+
IP (SENSE)
100
V = 1.0 nA
Scope
Put
Under
Test
CC
510k
16k
27k
20
vo
+VB
+V
Vo
6 V
0.6 V
tf
t
IC Electrical Characteristics
VA
VS
VF
VV
VP
IA
IF
IV
IP
VT = VP VS
IGAO
Figure 1. Electrical Characterization
Figure 2. Peak Current (IP) Test Circuit
Figure 3. Vo and tr Test Circuit
2N6027, 2N6028
http://onsemi.com
4
VS, SUPPLY VOLTAGE (VOLTS)
TA, AMBIENT TEMPERATURE (
C)
I , V
ALLEY

CURRENT
(
A)
V
100
10
1000
10
5
15
20
500
5
10
0
50
+50
+100
100
RG = 10 k
100 k
1 M
25
+25
+75
RG = 10 k
100 k
1 M
TYPICAL VALLEY CURRENT BEHAVIOR
IF, PEAK FORWARD CURRENT (AMP)
VS, SUPPLY VOLTAGE (VOLTS)
V , PEAK FOR
W
ARD
VOL
T
AGE
(VOL
TS)
F
0.1
0.05
0.02
0.01
0.2
0.5
1.0
0.02
0.01
0.05
0.1
10
20
5.0
0
15
10
0
20
30
25
TA = 25
C
5.0
15
25
CC = 0.2
F
1000 pF
V , PEAK OUTPUT
VOL
T
AGE
(VOL
TS)
o
TA = 25
C
(SEE FIGURE 3)
I , V
ALLEY

CURRENT
(
A)
V
2.0
5.0
10
0.2
2.0
0.5
1.0
5.0
35
40
A
K
G
K
A
G
E
P
N
N
P
Circuit Symbol
B2
B1
R1
R2
R1
R1 + R2
RBB = R1 + R2
=
Equivalent Circuit
with External "Program"
Resistors R1 and R2
Typical Application
CC
RT
K
A
G
R2
R1
+
Figure 4. Effect of Supply Voltage
Figure 5. Effect of Temperature
Figure 6. Forward Voltage
Figure 7. Peak Output Voltage
Figure 8. Programmable Unijunction
2N6027, 2N6028
http://onsemi.com
5
VS, SUPPLY VOLTAGE (VOLTS)
TA, AMBIENT TEMPERATURE (
C)
I , PEAK CURRENT

(


A)
P
1.0
0.5
0.3
0.2
0.1
2.0
3.0
5.0
10
10
5.0
15
20
1.0
0.5
20
0.2
0.1
2.0
50
5.0
10
0
50
+50
+100
100
TA = 25
C
(SEE FIGURE 2)
RG = 10 k
100 k
VS = 10 VOLTS
(SEE FIGURE 2)
1.0 M
25
+25
+75
RG = 10 k
100 k
1.0 M
I , PEAK CURRENT

(


A)
P
TYPICAL PEAK CURRENT BEHAVIOR
2N6027
VS, SUPPLY VOLTAGE (VOLTS)
TA, AMBIENT TEMPERATURE (
C)
I , PEAK CURRENT

(


A)
P
0.1
0.05
0.03
0.02
0.01
0.2
0.3
0.5
1.0
10
5.0
15
20
0.1
0.05
2.0
0.02
0.01
0.2
5.0
0.5
1.0
0
50
+50
+100
10
TA = 25
C
(SEE FIGURE 2)
RG = 10 k
100 k
VS = 10 VOLTS
(SEE FIGURE 2)
1.0 M
25
+25
+75
RG = 10 k
100 k
1.0 M
I , PEAK CURRENT

(


A)
P
2N6028
0.07
0.7
Figure 9. Effect of Supply Voltage and RG
Figure 10. Effect of Temperature and RG
Figure 11. Effect of Supply Voltage and RG
Figure 12. Effect of Temperature and RG