Semiconductor Components Industries, LLC, 2000
May, 2000 Rev. 3
1
Publication Order Number:
2N6071/D
2N6071A/B Series
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
Gate Triggering 4 Mode -- 2N6071A,B, 2N6073A,B, 2N6075A,B
Blocking Voltages to 600 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Device Marking: Device Type, e.g., 2N6071A, Date Code
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
*Peak Repetitive Off-State Voltage(1)
(TJ =
*
40 to 110
C, Sine Wave,
50 to 60 Hz, Gate Open)
2N6071A,B
2N6073A,B
2N6075A,B
VDRM,
VRRM
200
400
600
Volts
*On-State RMS Current (TC = 85
C)
Full Cycle Sine Wave 50 to 60 Hz
IT(RMS)
4.0
Amps
*Peak Nonrepetitive Surge Current
(One Full cycle, 60 Hz, TJ = +110
C)
ITSM
30
Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I2t
3.7
A2s
*Peak Gate Power
(Pulse Width
1.0
s, TC = 85
C)
PGM
10
Watts
*Average Gate Power
(t = 8.3 ms, TC = 85
C)
PG(AV)
0.5
Watt
*Peak Gate Voltage
(Pulse Width
1.0
s, TC = 85
C)
VGM
5.0
Volts
*Operating Junction Temperature Range
TJ
40 to
+110
C
*Storage Temperature Range
Tstg
40 to
+150
C
Mounting Torque (6-32 Screw)(2)
--
8.0
in. lb.
*Indicates JEDEC Registered Data.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of a compression washer. Mounting torque in
excess of 6 in. lb. does not appreciably lower case-to-sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
TRIACS
4 AMPERES RMS
200 thru 600 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
2N6071A
TO225AA
500/Box
http://onsemi.com
2N6071B
TO225AA
500/Box
2N6073A
TO225AA
500/Box
2N6073B
TO225AA
500/Box
2N6075A
TO225AA
500/Box
2N6075B
TO225AA
500/Box
TO225AA
(formerly TO126)
CASE 077
STYLE 5
1
2
3
PIN ASSIGNMENT
1
2
3
Main Terminal 2
Gate
Main Terminal 1
MT1
G
MT2
2N6071A/B Series
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, Junction to Case
R
JC
3.5
C/W
Thermal Resistance, Junction to Ambient
R
JA
75
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
TL
260
C
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25
C
TJ = 110
C
IDRM,
IRRM
--
--
--
--
10
2
A
mA
ON CHARACTERISTICS
*Peak On-State Voltage(1)
(ITM =
"
6 A Peak)
VTM
--
--
2
Volts
*Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = 40
C)
All Quadrants
VGT
--
1.4
2.5
Volts
Gate NonTrigger Voltage
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = 110
C)
All Quadrants
VGD
0.2
--
--
Volts
*Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current =
"
1 Adc)
(TJ = 40
C)
(TJ = 25
C)
IH
--
--
--
--
30
15
mA
Turn-On Time
(ITM = 14 Adc, IGT = 100 mAdc)
tgt
--
1.5
--
s
QUADRANT
(Maximum Value)
Type
IGT
@ TJ
I
mA
II
mA
III
mA
IV
mA
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc RL = 100 ohms)
2N6071A
2N6073A
+25
C
5
5
5
10
(Main Terminal Voltage = 12 Vdc, RL = 100 ohms)
2N6073A
2N6075A
40
C
20
20
20
30
2N6071B
2N6073B
+25
C
3
3
3
5
2N6073B
2N6075B
40
C
15
15
15
20
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
@ VDRM, TJ = 85
C, Gate Open, ITM = 5.7 A, Exponential Waveform,
Commutating di/dt = 2.0 A/ms
dv/dt(c)
--
5
--
V/
s
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
2.0 ms, Duty Cycle
2%.
2N6071A/B Series
http://onsemi.com
3
Trigger devices are recommended for gating on Triacs. They provide:
1. Consistent predictable turn-on points.
2. Simplified circuitry.
3. Fast turn-on time for cooler, more efficient and reliable operation.
SAMPLE APPLICATION:
TTL-SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
0 V
VEE
VEE = 5.0 V
MC7400
14
7
+
510
2N6071A
LOAD
4
115 VAC
60 Hz
+ Current
+ Voltage
VTM
IH
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2
VTM
IH
VTM
Maximum On State Voltage
IH
Holding Current
2N6071A/B Series
http://onsemi.com
4
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
() IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
() MT2
REF
MT1
() IGT
GATE
() MT2
REF
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III
Quadrant IV
Quadrant II
Quadrant I
Quadrant Definitions for a Triac
IGT
+ IGT
All polarities are referenced to MT1.
With inphase signals (using standard AC lines) quadrants I and III are used.
SENSITIVE GATE LOGIC REFERENCE
IC Logic
Firing Quadrant
g
Functions
I
II
III
IV
TTL
2N6071A
Series
2N6071A
Series
HTL
2N6071A
Series
2N6071A
Series
CMOS (NAND)
2N6071B
Series
2N6071B
Series
CMOS (Buffer)
2N6071B
Series
2N6071B
Series
Operational
Amplifier
2N6071A
Series
2N6071A
Series
Zero Voltage
Switch
2N6071A
Series
2N6071A
Series
2N6071A/B Series
http://onsemi.com
5
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
140
120
100
80
60
40
20
0
20
40
60
0.3
0.5
0.7
1.0
2.0
2.0
3.0
0.5
0.3
0.7
1.0
120
3.0
60
40
20
0
20
40
60
80
100
140
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
TJ, JUNCTION TEMPERATURE (
C)
TJ, JUNCTION TEMPERATURE (
C)
120
90
30
dc
0
2.0
4.0
8.0
6.0
4.0
3.0
2.0
1.0
IT(RMS), RMS ON-STATE CURRENT (AMP)
3.0
0
0
2.0
4.0
6.0
0
1.0
2.0
8.0
4.0
= 30
60
90
120
180
dc
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
80
3.0
90
70
100
0
1.0
2.0
110
4.0
60
120
dc
= CONDUCTION ANGLE
a
a
a
= CONDUCTION ANGLE
a
70
80
3.0
100
0
1.0
2.0
90
a
110
120
180
dc
90
= 30
a
a
= CONDUCTION ANGLE
4.0
IT(RMS), RMS ON-STATE CURRENT (AMP)
180
= 30
90
= CONDUCTION ANGLE
60
60
T
, CASE
TEMPERA
TURE ( C)
C
T
, CASE
TEMPERA
TURE ( C)
C
P
,
A
VERAGE
POWER
(W
A
TTS)
(A
V)
V
GT
P
,
A
VERAGE
POWER
(W
A
TTS)
(A
V)
I GT
= 180
Figure 1. Average Current Derating
Figure 2. RMS Current Derating
Figure 3. Power Dissipation
Figure 4. Power Dissipation
Figure 5. Typical GateTrigger Voltage
Figure 6. Typical GateTrigger Current
, GA
TE
TRIGGER
VOL
T
AGE
(NORMALIZED)
, GA
TE
TRIGGER
CURRENT
(NORMALIZED)
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