Complementary Silicon Plastic
Power Transistors
. . . designed for use in generalpurpose amplifier and switching
applications.
DC Current Gain Specified to 7.0 Amperes
hFE = 30150 @ IC
= 3.0 Adc -- 2N6111, 2N6288
= 2.3 (Min) @ IC = 7.0 Adc -- All Devices
CollectorEmitter Sustaining Voltage --
VCEO(sus) = 30 Vdc (Min) -- 2N6111, 2N6288
= 50 Vdc (Min) -- 2N6109
= 70 Vdc (Min) -- 2N6107, 2N6292
High Current Gain -- Bandwidth Product
fT = 4.0 MHz (Min) @ IC = 500 mAdc -- 2N6288, 90, 92
= 10 MHz (Min) @ IC = 500 mAdc -- 2N6107, 09, 11
TO220AB Compact Package
*MAXIMUM RATINGS
Rating
Symbol
2N6111
2N6288
2N6109
2N6107
2N6292
Unit
CollectorEmitter Voltage
VCEO
30
50
70
Vdc
CollectorBase Voltage
VCB
40
60
80
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
Peak
IC
7.0
10
Adc
Base Current
IB
3.0
Adc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
40
0.32
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
3.125
_
C/W
*Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
)
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 5
1
Publication Order Number:
2N6107/D
2N6107
2N6109
2N6111
2N6288
2N6292
*ON Semiconductor Preferred Device
7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
305070 VOLTS
40 WATTS
*
*
CASE 221A09
TO220AB
PNP
NPN
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
4
2N6107 2N6109 2N6111 2N6288 2N6292
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2
40
0
0
20
40
60
80
100
120
160
Figure 1. Power Derating
TC, CASE TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (W
A
TTS)
20
30
140
10
2N6107 2N6109 2N6111 2N6288 2N6292
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3
*ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0)
2N6111, 2N6288
2N6109
2N6107, 2N6292
VCEO(sus)
30
50
70
--
--
--
Vdc
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
2N6111, 2N6288
(VCE = 40 Vdc, IB = 0)
2N6109
(VCE = 60 Vdc, IB = 0)
2N6107, 2N6292
ICEO
--
--
--
1.0
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
2N6111, 2N6288
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N6109
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N6107, 2N6292
(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150
_
C)
2N6111, 2N6288
(VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150
_
C)
2N6109
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150
_
C)
2N6107, 2N6292
ICEX
--
--
--
--
--
--
100
100
100
2.0
2.0
2.0
Adc
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
--
1.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc)
2N6107, 2N6292
(IC = 2.5 Adc, VCE = 4.0 Vdc)
2N6109
(IC = 3.0 Adc, VCE = 4.0 Vdc)
2N6111, 2N6288
(IC = 7.0 Adc, VCE = 4.0 Vdc)
All Devices
hFE
30
30
30
2.3
150
150
150
--
--
CollectorEmitter Saturation Voltage
(IC = 7.0 Adc, IB = 3.0 Adc)
VCE(sat)
--
3.5
Vdc
BaseEmitter On Voltage
(IC = 7.0 Adc, VCE = 4.0 Vdc)
VBE(on)
--
3.0
Vdc
DYNAMIC CHARACTERISTICS
Current Gain -- Bandwidth Product (2)
(IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz)
2N6288, 92
2N6107, 09, 11
fT
4.0
10
--
--
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
--
250
pF
SmallSignal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz)
hfe
20
--
--
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
(2) fT = |hfe|
ftest.
2N6107 2N6109 2N6111 2N6288 2N6292
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4
Figure 2. Switching Time Test Circuit
+11 V
25
s
0
-9.0 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf
10 ns
DUTY CYCLE = 1.0%
51
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB
100 mA
MSD6100 USED BELOW IB
100 mA
RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
2.0
0.07
Figure 3. TurnOn Time
IC, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.02
0.1
0.2 0.3
0.5
2.0 3.0
7.0
TJ = 25
C
VCC = 30 V
IC/IB = 10
0.05
t, TIME
(s)
tr
1.0
5.0
td @ VBE(off)
5.0 V
0.07
0.03
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t)
,
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
0.05
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
JC(t) = r(t) R
JC
R
JC = 3.125
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) Z
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
0.1
0.5
0.2
15
1.0
Figure 5. ActiveRegion Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
7.0
5.0
2.0
0.15
5.0
10
CURRENT LIMIT
SECONDARY
BREAKDOWN LIMIT
THERMAL LIMIT
@ TC = 25
C (SINGLE PULSE)
7.0
I C
, COLLECT
OR CURRENT
(AMPS)
dc
0.1 ms
1.0
0.5
0.2
0.3
2.0 3.0
0.5 ms
20 30
50 70 100
3.0
0.7
0.1
ms
5.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
2N6107 2N6109 2N6111 2N6288 2N6292
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5
300
0.5
VR, REVERSE VOLTAGE (VOLTS)
30
3.0
5.0
50
1.0
2.0
C, CAP
ACIT
ANCE (pF)
200
70
50
TJ = 25
C
Cib
100
Figure 6. TurnOff Time
10
20
30
5.0
0.07
Figure 7. Capacitance
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
1.0
0.7
0.5
0.3
0.05
0.1
0.2 0.3
0.5
2.0 3.0
7.0
TJ = 25
C
VCC = 30 V
IC/IB = 10
IB1 = IB2
0.1
t, TIME
(s)
tr
1.0
5.0
0.2
0.07
ts
Cob
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