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Электронный компонент: 2N6400

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Semiconductor Components Industries, LLC, 1999
February, 2000 Rev. 1
1
Publication Order Number:
2N6400/D
2N6400 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
halfwave silicon gatecontrolled, solidstate devices are needed.
Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 Volts
Device Marking: Logo, Device Type, e.g., 2N6400, Date Code
*MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage(1)
(TJ =
*
40 to 125
C, Sine Wave 50 to
60 Hz; Gate Open)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
VDRM,
VRRM
50
100
200
400
600
800
Volts
On-State RMS Current
(180
Conduction Angles; TC = 100
C)
IT(RMS)
16
A
Average On-State Current
(180
Conduction Angles; TC = 100
C)
IT(AV)
10
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125
C)
ITSM
160
A
Circuit Fusing (t = 8.3 ms)
I2t
145
A2s
Forward Peak Gate Power
(Pulse Width
1.0
s, TC = 100
C)
PGM
20
Watts
Forward Average Gate Power
(t = 8.3 ms, TC = 100
C)
PG(AV)
0.5
Watts
Forward Peak Gate Current
(Pulse Width
1.0
s, TC = 100
C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
40 to
+125
C
Storage Temperature Range
Tstg
40 to
+150
C
*Indicates JEDEC Registered Data.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
16 AMPERES RMS
50 thru 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
2N6400
TO220AB
500/Box
2N6401
TO220AB
2N6402
TO220AB
http://onsemi.com
500/Box
500/Box
K
G
A
TO220AB
CASE 221A
STYLE 3
1
2
3
4
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
2N6403
TO220AB
500/Box
2N6404
TO220AB
500/Box
2N6405
TO220AB
500/Box
2N6400 Series
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.5
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
TL
260
C
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
* Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25
C
TJ = 125
C
IDRM, IRRM
--
--
--
--
10
2.0
A
mA
ON CHARACTERISTICS
* Peak Forward OnState Voltage
(ITM = 32 A Peak, Pulse Width
1 ms, Duty Cycle
2%)
VTM
--
--
1.7
Volts
* Gate Trigger Current (Continuous dc)
TC = 25
C
(VD = 12 Vdc, RL = 100 Ohms)
TC = 40
C
IGT
--
--
9.0
--
30
60
mA
* Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
TC = 25
C
TC = 40
C
VGT
--
--
0.7
--
1.5
2.5
Volts
Gate NonTrigger Voltage
(VD = 12 Vdc, RL = 100 Ohms)
TC = +125
C
VGD
0.2
--
--
Volts
* Holding Current
TC = 25
C
(VD = 12 Vdc, Initiating Current = 200 mA,
Gate Open)
*TC = 40
C
IH
--
--
18
--
40
60
mA
Turn-On Time
(ITM = 16 A, IGT = 40 mAdc, VD = Rated VDRM)
tgt
--
1.0
--
s
Turn-Off Time
(ITM = 16 A, IR = 16 A, VD = Rated VDRM)
TC = 25
C
TJ = +125
C
tq
--
--
15
35
--
--
s
DYNAMIC CHARACTERISTICS
Critical RateofRise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform)
TJ = +125
C
dv/dt
--
50
--
V/
s
*Indicates JEDEC Registered Data.
2N6400 Series
http://onsemi.com
3
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
IRRM at VRRM
(off state)
CT , MAXIMUM CASE
TEMPERA
TURE ( C)
6.0
120
100
112
128
60
= 30
0
1.0
2.0
3.0
8.0
= CONDUCTION ANGLE
Figure 1. Average Current Derating
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
90
P
,
A
VERAGE
POWER
(W
A
TTS)
(A
V)
12
0
4.0
8.0
TJ
125
C
Figure 2. Maximum OnState Power Dissipation
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
7.0
0
1.0
2.0
3.0
8.0
= CONDUCTION ANGLE
4.0
5.0
7.0
180
dc
10
2.0
6.0
14
16
4.0
5.0
6.0
60
= 30
90
180
dc
124
104
108
116
10
9.0
120
9.0
10
120
2N6400 Series
http://onsemi.com
4
Figure 3. OnState Characteristics
Figure 4. Maximum NonRepetitive Surge Current
Figure 5. Thermal Response
1.0
0.02
0.03
0.05
0.07
0.1
100
0.2
0.3
0.5
0.7
0.2
0.3
0.5
1.0
2.0
0.8
0.1
Z
JC(t) = R
JC
r(t)
1.0
120
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
TJ = 125
C
f = 60 Hz
NUMBER OF CYCLES
130
140
150
160
20
2.0
3.0
4.0
6.0
8.0
10
0.4
0.01
t, TIME (ms)
3.0
5.0
110
0.2
0.3
0.5
0.7
7.0
5.0
1.0
2.0
10
50
3.0
20
30
70
vTM, INSTANTANEOUS ONSTATE VOLTAGE (VOLTS)
1.6
2.4
2.0
4.0
4.4
1.2
30
50
100
200 300
500
2.0 k
10
3.0 k 5.0 k
10 k
1.0 k
I , PEAK SURGE CURRENT

(AMP)
TSM
r(t), TRANSIENT

THERMAL

RESIST
ANCE
(NORMALIZED)
TMi
, INST
ANT
ANEOUS
ONST
A
TE FOR
W
ARD
CURRENT

(AMPS)
TJ = 25
C
125
C
1 CYCLE
200
2.8
3.6
3.2
2N6400 Series
http://onsemi.com
5
I , HOLDING CURRENT
(mA)
H
TYPICAL CHARACTERISTICS
TJ, JUNCTION TEMPERATURE (
C)
100
10
1
10
1
100
Figure 6. Typical Gate Trigger Current
versus Pulse Width
30
50
20
10
5.0
70
7.0
125
110
80
65
50
35
5
10
25
20
TJ, JUNCTION TEMPERATURE (
C)
200
100
50
20
10
5.0
0.2
1.0
0.5
2.0
PULSE WIDTH (ms)
i GT
I GT
V
GT
125
110
95
80
50
35
5
40
0.8
10
25
20
TJ, JUNCTION TEMPERATURE (
C)
0.6
0.4
0.2
,
P
EAK GA
T
E
C
U
RR
EN
T
(mA)
3.0
100
, GA
T
E
TR
IGGE
R

V
OL
T
AGE (
V
OL
T
S)
1.0
TJ = 40
C
25
C
125
C
, GA
TE
TRIGGER
CURRENT

(mA)
40
OFF-STATE VOLTAGE = 12 V
RL = 50 W
2.0
1.0
Figure 7. Typical Gate Trigger Current
versus Junction Temperature
Figure 8. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 9. Typical Holding Current
versus Junction Temperature
95
65
0.9
0.7
0.5
0.3
125
110
95
80
50
35
5
40
10
25
20
65