Semiconductor Components Industries, LLC, 2001
April, 2001 Rev. 2
1
Publication Order Number:
2N6400/D
2N6400 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
halfwave silicon gatecontrolled, solidstate devices are needed.
Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 Volts
Device Marking: Logo, Device Type, e.g., 2N6400, Date Code
*MAXIMUM RATINGS
(T
J
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1.)
(T
J
=
*
40 to 125
C, Sine Wave
50 to 60 Hz; Gate Open)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
V
DRM,
V
RRM
50
100
200
400
600
800
Volts
On-State RMS Current
(180
Conduction Angles; T
C
= 100
C)
I
T(RMS)
16
A
Average On-State Current
(180
Conduction Angles; T
C
= 100
C)
I
T(AV)
10
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 90
C)
I
TSM
160
A
Circuit Fusing (t = 8.3 ms)
I
2
t
145
A
2
s
Forward Peak Gate Power
(Pulse Width
1.0
s, T
C
= 100
C)
P
GM
20
Watts
Forward Average Gate Power
(t = 8.3 ms, T
C
= 100
C)
P
G(AV)
0.5
Watts
Forward Peak Gate Current
(Pulse Width
1.0
s, T
C
= 100
C)
I
GM
2.0
A
Operating Junction Temperature Range
T
J
40 to
+125
C
Storage Temperature Range
T
stg
40 to
+150
C
*Indicates JEDEC Registered Data.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
16 AMPERES RMS
50 thru 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
2N6400
TO220AB
500/Box
2N6401
TO220AB
2N6402
TO220AB
http://onsemi.com
500/Box
500/Box
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
2N6403
TO220AB
500/Box
2N6404
TO220AB
500/Box
2N6405
TO220AB
500/Box
TO220AB
CASE 221A
STYLE 3
1
2
3
4
MARKING
DIAGRAM
YY WW
640x
x
= 0, 1, 2, 3, 4 or 5
YY = Year
WW = Work Week
2N6400 Series
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.5
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
T
L
260
C
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open)
T
J
= 25
C
T
J
= 125
C
I
DRM
, I
RRM
10
2.0
A
mA
ON CHARACTERISTICS
*Peak Forward OnState Voltage
(I
TM
= 32 A Peak, Pulse Width
1 ms, Duty Cycle
2%)
V
TM
1.7
Volts
*Gate Trigger Current (Continuous dc)
T
C
= 25
C
(V
D
= 12 Vdc, R
L
= 100 Ohms)
T
C
= 40
C
I
GT
9.0
30
60
mA
*Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100 Ohms)
T
C
= 25
C
T
C
= 40
C
V
GT
0.7
1.5
2.5
Volts
Gate NonTrigger Voltage
(V
D
= 12 Vdc, R
L
= 100 Ohms)
T
C
= +125
C
V
GD
0.2
Volts
*Holding Current
T
C
= 25
C
(V
D
= 12 Vdc, Initiating Current = 200 mA,
Gate Open)
*T
C
= 40
C
I
H
18
40
60
mA
Turn-On Time
(I
TM
= 16 A, I
GT
= 40 mAdc, V
D
= Rated V
DRM
)
t
gt
1.0
s
Turn-Off Time
(I
TM
= 16 A, I
R
= 16 A, V
D
= Rated V
DRM
)
T
C
= 25
C
T
J
= +125
C
t
q
15
35
s
DYNAMIC CHARACTERISTICS
Critical RateofRise of Off-State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform)
T
J
= +125
C
dv/dt
50
V/
s
*Indicates JEDEC Registered Data.
2N6400 Series
http://onsemi.com
3
+ Current
+ Voltage
V
TM
I
DRM
at V
DRM
I
H
Symbol
Parameter
V
DRM
Peak Repetitive Off State Forward Voltage
I
DRM
Peak Forward Blocking Current
V
RRM
Peak Repetitive Off State Reverse Voltage
I
RRM
Peak Reverse Blocking Current
V
TM
Peak On State Voltage
I
H
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
I
RRM
at V
RRM
(off state)
CT , MAXIMUM CASE
TEMPERA
TURE ( C)
6.0
120
100
112
128
60
= 30
0
1.0
2.0
3.0
8.0
= CONDUCTION ANGLE
Figure 1. Average Current Derating
I
T(AV)
, AVERAGE ON STATE FORWARD CURRENT (AMPS)
90
P
,
A
VERAGE POWER (W
A
TTS)
(A
V)
12
0
4.0
8.0
T
J
125
C
Figure 2. Maximum OnState Power Dissipation
I
T(AV)
, AVERAGE ON STATE FORWARD CURRENT (AMPS)
7.0
0
1.0
2.0
3.0
8.0
= CONDUCTION ANGLE
4.0
5.0
7.0
180
dc
10
2.0
6.0
14
16
4.0
5.0
6.0
60
= 30
90
180
dc
124
104
108
116
10
9.0
120
9.0
10
120
2N6400 Series
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4
Figure 3. OnState Characteristics
Figure 4. Maximum NonRepetitive Surge Current
Figure 5. Thermal Response
1.0
0.02
0.03
0.05
0.07
0.1
100
0.2
0.3
0.5
0.7
0.2 0.3
0.5
1.0
2.0
0.8
0.1
Z
JC(t)
= R
JC
r(t)
1.0
120
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
T
J
= 125
C
f = 60 Hz
NUMBER OF CYCLES
130
140
150
160
20
2.0
3.0
4.0
6.0
8.0
10
0.4
0.01
t, TIME (ms)
3.0
5.0
110
0.2
0.3
0.5
0.7
7.0
5.0
1.0
2.0
10
50
3.0
20
30
70
v
TM
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
1.6
2.4
2.0
4.0
4.4
1.2
30
50
100
200 300 500
2.0 k
10
3.0 k 5.0 k
10 k
1.0 k
I , PEAK SURGE CURRENT
(AMP)
TSM
r(t), TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
TMi
, INST
ANT
ANEOUS ON-ST
A
TE FOR
W
ARD CURRENT
(AMPS)
T
J
= 25
C
125
C
1 CYCLE
200
2.8
3.6
3.2
2N6400 Series
http://onsemi.com
5
I , HOLDING CURRENT
(mA)
H
TYPICAL CHARACTERISTICS
T
J
, JUNCTION TEMPERATURE (
C)
100
10
1
10
1
100
Figure 6. Typical Gate Trigger Current
versus Pulse Width
30
50
20
10
5.0
70
7.0
125
110
80
65
50
35
5
-10
-25
20
T
J
, JUNCTION TEMPERATURE (
C)
200
100
50
20
10
5.0
0.2
1.0
0.5
2.0
PULSE WIDTH (ms)
i GT
I GT
V GT
125
110
95
80
50
35
5
-40
0.8
-10
-25
20
T
J
, JUNCTION TEMPERATURE (
C)
0.6
0.4
0.2
, PEAK GA
TE CURRENT
(mA)
3.0
100
, GA
TE
TRIGGER VOL
T
AGE (VOL
TS)
1.0
T
J
= -40
C
25
C
125
C
, GA
TE
TRIGGER CURRENT
(mA)
-40
OFF STATE VOLTAGE = 12 V
R
L
= 50 W
2.0
1.0
Figure 7. Typical Gate Trigger Current
versus Junction Temperature
Figure 8. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 9. Typical Holding Current
versus Junction Temperature
95
65
0.9
0.7
0.5
0.3
125
110
95
80
50
35
5
-40
-10
-25
20
65
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