Darlington Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
40
Vdc
CollectorBase Voltage
VCBO
40
Vdc
EmitterBase Voltage
VEBO
12
Vdc
Collector Current -- Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (1)
(IC = 10 mAdc, VBE = 0)
V(BR)CEO
40
--
--
Vdc
CollectorBase Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
V(BR)CBO
40
--
--
Vdc
EmitterBase Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
V(BR)EBO
12
--
--
Vdc
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
ICES
--
--
1.0
m
Adc
Collector Cutoff Current
(VCB= 30 Vdc, IE = 0)
ICBO
--
--
50
nAdc
Emitter Cutoff Current
(VEB= 10 Vdc, IC = 0)
IEBO
--
--
50
nAdc
1. Pulse Test: Pulse Width
v
300
m
s; Duty Cycle
v
2.0%.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
February, 2001 Rev.1
1
Publication Order Number:
2N6426/D
2N6426
2N6427
*ON Semiconductor Preferred Device
CASE 2904, STYLE 1
TO92 (TO226AA)
*
1
2
3
COLLECTOR 3
BASE
2
EMITTER 1
2N6426 2N6427
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 10 mAdc, VCE = 5.0 Vdc)
2N6426
2N6427
(IC = 100 mAdc, VCE = 5.0 Vdc)
2N6426
2N6427
(IC = 500 mAdc, VCE = 5.0 Vdc)
2N6426
2N6427
hFE
20,000
10,000
30,000
20,000
20,000
14,000
--
--
--
--
--
--
200,000
100,000
300,000
200,000
200,000
140,000
--
CollectorEmitter Saturation Voltage
(IC = 50 mAdc, IB = 0.5 mAdc)
(IC = 500 mAdc, IB = 0.5 mAdc
VCE(sat)
--
--
0.71
0.9
1.2
1.5
Vdc
BaseEmitter Saturation Voltage
(IC = 500 mAdc, IB = 0.5 mAdc)
VBE(sat)
--
1.52
2.0
Vdc
BaseEmitter On Voltage
(IC = 50 mAdc, VCE = 5.0 Vdc)
VBE(on)
--
1.24
1.75
Vdc
SMALLSIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
--
5.4
7.0
pF
Input Capacitance
(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
--
10
15
pF
Input Impedance
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
2N6426
2N6427
hie
100
50
--
--
2000
1000
k
SmallSignal Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
2N6426
2N6427
hfe
20,000
10,000
--
--
--
--
--
CurrentGain -- High Frequency
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
2N6426
2N6427
|hfe|
1.5
1.3
2.4
2.4
--
--
--
Output Admittance
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hoe
--
--
1000
m
mhos
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 k
, f = 1.0 kHz)
NF
--
3.0
10
dB
1. Pulse Test: Pulse Width
v
300
m
s; Duty Cycle
v
2.0%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2N6426 2N6427
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3
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25
C)
Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
RS, SOURCE RESISTANCE (k
)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (k
)
5.0
50
70
100
200
30
10
20
1.0
10
10
20
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS
0
IC = 1.0 mA
100
A
10
A
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100
A
10
A
e n
, NOISE VOL
T
AGE (nV)
i n
, NOISE CURRENT
(pA)
2.0
5.0
10
20
50
100 200
500
1000
BANDWIDTH = 10 Hz TO 15.7 kHz
IC = 10
A
100
A
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0
2.0
5.0
10
20
50 100
200
500 1000
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10
A
100
A
IC = 1.0 mA
V T
,
T
O
T
A
L
WIDEBAND NOISE VOL
T
AGE (nV)
NF
, NOISE FIGURE (dB)
10 20
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
2N6426 2N6427
http://onsemi.com
4
SMALLSIGNALCHARACTERISTICS
Figure 6. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
5.0
7.0
10
20
3.0
Figure 7. High Frequency Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
IB, BASE CURRENT (
A)
2.0
200 k
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
TJ = 25
C
C, CAP
ACIT
ANCE (pF)
1.5
2.0
2.5
3.0
1.0
0.5
|h
fe
|, SMALL-SIGNAL
CURRENT
GAIN
h FE
, DC CURRENT
GAIN
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
0.1
0.2
0.4
1.0 2.0
4.0
10
20
40
Cibo
Cobo
0.5
1.0
2.0
0.5
10
20
50
100 200
500
VCE = 5.0 V
f = 100 MHz
TJ = 25
C
100 k
70 k
50 k
30 k
20 k
10 k
7.0 k
5.0 k
3.0 k
2.0 k
7.0 10
20
30
50 70 100
200 300
500
TJ = 125
C
25
C
-55
C
VCE = 5.0 V
0.1 0.2 0.5 1.0 2.0
5.0 10 20 50 100 200 500 1000
TJ = 25
C
IC = 10 mA 50 mA
250 mA 500 mA
Figure 10. "On" Voltages
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
1.6
5.0
-1.0
V
,
VOL
T
AGE (VOL
TS)
1.4
1.2
1.0
0.8
0.6
7.0
10
20 30
50 70 100 200 300
500
VBE(sat) @ IC/IB = 1000
R
V,
TEMPERA
TURE COEFFICIENTS (mV/
C)
TJ = 25
C
VBE(on) @ VCE = 5.0 V
VCE(sat) @ IC/IB = 1000
-2.0
-3.0
-4.0
-5.0
-6.0
5.0 7.0 10
20 30
50 70 100
200 300
500
25
C TO 125
C
-55
C TO 25
C
*RqVC FOR VCE(sat)
qVB FOR VBE
25
C TO 125
C
-55
C TO 25
C
*APPLIES FOR IC/IB
hFE/3.0
2N6426 2N6427
http://onsemi.com
5
Figure 12. Thermal Response
t, TIME (ms)
1.0
2.0
5.0
1.0
0.5
0.2
0.1
RESIST
ANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20
50
10
200
500
100
1.0 k
2.0 k
5.0 k
10 k
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 k
0.4
700
500
300
200
100
70
50
30
20
10
0.6
1.0
2.0
4.0 6.0
10
20
40
I C
, COLLECT
OR CURRENT
(mA)
TA = 25
C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
Z
JC(t) = r(t)
R
JC TJ(pk) - TC = P(pk) Z
JC(t)
Z
JA(t) = r(t)
R
JA TJ(pk) - TA = P(pk) Z
JA(t)
1.0 ms
100
s
TC = 25
C
1.0 s
Design Note: Use of Transient Thermal Resistance Data
FIGURE A
tP
PP
PP
t1
1/f
DUTY CYCLE + t1 f +
t1
tP
PEAK PULSE POWER = PP
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