Semiconductor Components Industries, LLC, 2001
April, 2001 Rev. 4
1
Publication Order Number:
2N6504/D
2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
Glass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 Volts
300 A Surge Current Capability
Device Marking: Logo, Device Type, e.g., 2N6504, Date Code
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
*Peak Repetitive OffState Voltage (Note 1.)
(Gate Open, Sine Wave 50 to 60 Hz,
T
J
= 25 to 125
C)
2N6504
2N6505
2N6507
2N6508
2N6509
V
DRM,
V
RRM
50
100
400
600
800
Volts
On-State RMS Current
(180
Conduction Angles; T
C
= 85
C)
I
T(RMS)
25
A
Average On-State Current
(180
Conduction Angles; T
C
= 85
C)
I
T(AV)
16
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 100
C)
I
TSM
250
A
Forward Peak Gate Power
(Pulse Width
1.0
s, T
C
= 85
C)
P
GM
20
Watts
Forward Average Gate Power
(t = 8.3 ms, T
C
= 85
C)
P
G(AV)
0.5
Watts
Forward Peak Gate Current
(Pulse Width
1.0
s, T
C
= 85
C)
I
GM
2.0
A
Operating Junction Temperature Range
T
J
40 to
+125
C
Storage Temperature Range
T
stg
40 to
+150
C
*Indicates JEDEC Registered Data
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
25 AMPERES RMS
50 thru 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
2N6504
TO220AB
500/Box
2N6505
TO220AB
2N6507
TO220AB
http://onsemi.com
500/Box
500/Box
K
G
A
TO220AB
CASE 221A
STYLE 3
1
2
3
4
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
2N6508
TO220AB
500/Box
2N6509
TO220AB
500/Box
MARKING
DIAGRAM
YY WW
650x
x
= 4, 5, 7, 8 or 9
YY = Year
WW = Work Week
2N6504 Series
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2
*THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.5
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
T
L
260
C
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open)
T
J
= 25
C
T
J
= 125
C
I
DRM
, I
RRM
10
2.0
A
mA
ON CHARACTERISTICS
*Forward OnState Voltage (Note 2.)
(I
TM
= 50 A)
V
TM
1.8
Volts
*Gate Trigger Current (Continuous dc)
T
C
= 25
C
(V
AK
= 12 Vdc, R
L
= 100 Ohms)
T
C
= 40
C
I
GT
9.0
30
75
mA
*Gate Trigger Voltage (Continuous dc)
(V
AK
= 12 Vdc, R
L
= 100 Ohms, T
C
= 40
C)
V
GT
1.0
1.5
Volts
Gate Non-Trigger Voltage
(V
AK
= 12 Vdc, R
L
= 100 Ohms, T
J
= 125
C)
V
GD
0.2
Volts
*Holding Current
T
C
= 25
C
(V
AK
= 12 Vdc, Initiating Current = 200 mA,
Gate Open)
T
C
= 40
C
I
H
18
40
80
mA
*Turn-On Time
(I
TM
= 25 A, I
GT
= 50 mAdc)
t
gt
1.5
2.0
s
Turn-Off Time (V
DRM
= rated voltage)
(I
TM
= 25 A, I
R
= 25 A)
(I
TM
= 25 A, I
R
= 25 A, T
J
= 125
C)
t
q
15
35
s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
(Gate Open, Rated V
DRM
, Exponential Waveform)
dv/dt
50
V/
s
*Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
2N6504 Series
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3
+ Current
+ Voltage
V
TM
I
DRM
at V
DRM
I
H
Symbol
Parameter
V
DRM
Peak Repetitive Off State Forward Voltage
I
DRM
Peak Forward Blocking Current
V
RRM
Peak Repetitive Off State Reverse Voltage
I
RRM
Peak Reverse Blocking Current
V
TM
Peak On State Voltage
I
H
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
I
RRM
at V
RRM
(off state)
CT , MAXIMUM CASE
TEMPERA
TURE ( C)
dc
180
16
12
0
80
90
10
0
110
13
0
60
= 30
0
4.0
8.0
12
20
= CONDUCTION ANGLE
I
T(AV)
, ON STATE FORWARD CURRENT (AMPS)
90
P
,
A
VERAGE POWER (W
A
TTS)
(A
V)
180
90
24
0
8.0
16
32
T
J
= 125
C
dc
60
= 30
I
T(AV)
, AVERAGE ON STATE FORWARD CURRENT (AMPS)
16
0
4.0
8.0
12
20
= CONDUCTION ANGLE
Figure 1. Average Current Derating
Figure 2. Maximum OnState Power Dissipation
2N6504 Series
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4
1.0
0.02
0.03
0.05
0.07
0.1
100
0.2
0.3
0.5
0.7
0.2 0.3
0.5
1.0
2.0
25
C
125
C
0.4
0.1
Z
JC(t)
= R
JC
r(t)
1 CYCLE
1.0
200
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
T
C
= 85
C
f = 60 Hz
NUMBER OF CYCLES
225
250
275
300
20
2.0
3.0
4.0
6.0
8.0
10
0.1
0
0.01
t, TIME (ms)
3.0
5.0
175
0.2
0.3
0.5
0.7
7.0
5.0
1.0
2.0
10
50
3.0
20
30
70
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
1.2
2.0
1.6
2.4
2.8
0.8
30
50
100
200 300 500
2.0 k
10
3.0 k 5.0 k
10 k
1.0 k
I , PEAK SURGE CURRENT
(AMP)
TSM
r(t), TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
Fi , INST
ANT
ANEOUS FOR
W
ARD CURRENT
(AMPS)
Figure 3. Typical OnState Characteristics
Figure 4. Maximum NonRepetitive Surge Current
Figure 5. Thermal Response
2N6504 Series
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5
TYPICAL TRIGGER CHARACTERISTICS
Figure 6. Typical Gate Trigger Current
versus Junction Temperature
Figure 7. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 8. Typical Holding Current
versus Junction Temperature
10
1
100
125
110
80
65
50
35
5
-10
-25
20
T
J
, JUNCTION TEMPERATURE (
C)
I GT
, GA
TE
TRIGGER CURRENT
(mA)
-40
95
V GT
125
110
95
80
50
35
5
-40
0.8
-10
-25
20
T
J
, JUNCTION TEMPERATURE (
C)
0.6
0.4
0.2
, GA
TE
TRIGGER VOL
T
AGE (VOL
TS)
1.0
65
0.9
0.7
0.5
0.3
I , HOLDING CURRENT
(mA)
H
T
J
, JUNCTION TEMPERATURE (
C)
100
10
1
125
110
95
80
50
35
5
-40
-10
-25
20
65
2N6504 Series
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6
PACKAGE DIMENSIONS
TO220AB
CASE 221A07
ISSUE AA
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.014
0.022
0.36
0.55
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
---
1.15
---
Z
---
0.080
---
2.04
A
K
L
V
G
D
N
Z
H
Q
F
B
1 2 3
4
T
SEATING
PLANE
S
R
J
U
T
C
2N6504 Series
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7
Notes
2N6504 Series
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8
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