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Электронный компонент: 80SQ045NRLG

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Semiconductor Components Industries, LLC, 2006
May, 2006 - Rev. 3
1
Publication Order Number:
80SQ045N/D
80SQ045N
Preferred Device
Axial Lead Rectifier
These devices employ the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low-voltage,
high-frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
High Current Capability
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Guard-Ring for Stress Protection
Low Forward Voltage
High Surge Capacity
These are Pb-Free Devices*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
220
C Max. for 10 Seconds, 1/16 from Case
Polarity: Cathode indicated by Polarity Band
ESD Protection: Human Body Model > 4000 V (Class 3)
Machine Model > 400 V (Class C)
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45
V
Average Rectified Forward Current T
L
= 75
C
(Psi
JL
= 12
C/W, P.C. Board Mounting, Note 2)
I
O
8.0
A
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
140
A
Operating and Storage Junction Tempera-
ture Range (Reverse Voltage Applied)
T
J
, T
stg
-65 to +125
C
Voltage Rate of Change (Rated V
R
)
dv/dt
10
V/ns
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
AXIAL LEAD
CASE 267-05
(DO-201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIER
8.0 AMPERES
Preferred devices are recommended choices for future use
and best overall value.
80SQ045N
Axial Lead*
500 Units/Box
80SQ045NRL
Axial Lead*
MARKING DIAGRAM
80SQ
045N
YYWW
G
G
YY
= Year
WW
= Work Week
G
= Pb-Free Package
80SQ045NRLG
Axial Lead*
1500/Tape & Reel
1500/Tape & Reel
80SQ045NG
Axial Lead*
500 Units/Box
(Note: Microdot may be in either location)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*This package is inherently Pb-Free.
http://onsemi.com
80SQ045N
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
0.9 in x 0.9 in
Copper Pad Size
6.75 in x 6.75 in
Copper Pad Size
Unit
Thermal Resistance, Junction-to-Lead
(See Note 2 - Mounting Data)
Thermal Resistance, Junction-to-Ambient (See Note 2 - Mounting Data)
R
q
JL
R
q
JA
13
50
12
40
C/W
ELECTRICAL CHARACTERISTICS (T
L
= 25
C unless otherwise noted)
Characteristic
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 8.0 A, T
L
= 25
C)
v
F
0.55
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1)
T
L
= 25
C
T
L
= 100
C
i
R
1.0
50
mA
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
Figure 1. Typical Forward Voltage
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
30
10
1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Figure 2. Maximum Forward Voltage
0.1
Figure 3. Typical Reverse Current
V
R
, REVERSE VOLTAGE (VOLTS)
1E-01
1E-02
1E-03
1E-04
35
30
25
10
20
15
5
0
1E-06
I
F
, INST
ANT
ANEOUS FOR
W
ARD
CURRENT (AMPS)
I
R
, INST
ANT
ANEOUS REVERSE CURRENT (AMPS)
50
45
40
1E-05
125
C
25
C
100
C
75
C
125
C
25
C
100
C
75
C
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
30
10
1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
I
F
, INST
ANT
ANEOUS FOR
W
ARD
CURRENT (AMPS)
125
C
25
C
100
C
75
C
MBR845
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
f = 1 MHz
T
J
= 25
C
100
10
1
0.1
C,
CAP
ACIT
ANCE (pF)
100
1000
10,000
80SQ045N
http://onsemi.com
3
R
q
JA
(
C/W)
Figure 5. R
q
JA
versus Copper Area
See Note 2
10
4
2
0
COPPER AREA (sq in)
30
T
L
, LEAD TEMPERATURE (
C)
Figure 6. Current Derating - Lead
SQUARE
WAVE
140
40
20
0
I
F
,
A
VERAGE
FOR
W
ARD
CURRENT (AMPS)
0
I
O
, AVERAGE FORWARD CURRENT (AMPS)
Figure 7. Forward Power Dissipation
T
J
= 125
C
10
6
2
0
P
FO
, A
VERAGE
POWER
DISSIP
A
TION (W
A
TTS)
0
35
40
45
50
55
60
65
70
75
8
6
80
60
100
120
1
2
3
4
5
6
7
8
9
dc
R
q
JL
= 12
C/W
4
8
0.5
1
1.5
2
2.5
3
3.5
4
4.5
SQUARE
WAVE
dc
NOTE 2 -- MOUNTING DATA
Mounting Method
P.C. Board with 6.75 sq. in.
copper surface.
Board Ground Plane
L = 3/8
,
0.1
t, TIME (sec)
100
1.0
0.001
10
1
0.1
0.0001
0.1
1000
Figure 8. Thermal Response, Junction-to-Ambient
0.2
0.01
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
0.001
0.01
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESIST
ANCE
D = 0.5
0.05
Copper Area = 0.271 sq. in.
R
q
JA
= 61.8
C/W
80SQ045N
http://onsemi.com
4
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 267-05
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
1
2
K
A
K
D
B
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.287
0.374
7.30
9.50
B
0.189
0.209
4.80
5.30
D
0.047
0.051
1.20
1.30
K
1.000
---
25.40
---
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Phone: 81-3-5773-3850
80SQ045N/D
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