Semiconductor Components Industries, LLC, 2000
April, 2000 Rev. 3
1
Publication Order Number:
BAS4006LT1/D
BAS40-06LT1
Preferred Device
Common Anode Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand held and portable
applications where space is limited.
Extremely Fast Switching Speed
Low Forward Voltage -- 0.50 Volts (Typ) @ IF = 10 mAdc
Device Marking: L2
MAXIMUM RATINGS
(TJ = 150
C unless otherwise noted)
Symbol
Rating
Value
Unit
VR
Reverse Voltage
40
Volts
THERMAL CHARACTERISTICS
Symbol
Characteristic
Max
Unit
PF
Forward Power Dissipation
@ TA = 25
C
Derate above 25
C
225
1.8
mW
mW/
C
TJ, Tstg
Operating Junction and Storage
Temperature Range
55 to
+150
C
40 VOLTS
SCHOTTKY BARRIER DIODE
Device
Package
Shipping
ORDERING INFORMATION
BAS4006LT1
SOT23
3000 / Tape & Reel
http://onsemi.com
PLASTIC
SOT23 (TO236AB)
CASE 318
Preferred devices are recommended choices for future use
and best overall value.
1
2
3
ANODE
3
CATHODE
1
2
CATHODE
BAS4006LT1
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2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage (IR = 10
A)
V(BR)R
40
--
Volts
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
CT
--
5.0
pF
Reverse Leakage (VR = 25 V)
IR
--
1.0
Adc
Forward Voltage (IF = 0.1 mAdc)
VF
--
380
mVdc
Forward Voltage (IF = 30 mAdc)
VF
--
500
mVdc
Forward Voltage (IF = 100 mAdc)
VF
--
1.0
Vdc
100
0
0.1
VF, FORWARD VOLTAGE (VOLTS)
0.2
0.3
0.4
0.5
10
1.0
0.1
85
C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5.0
10
15
20
25
3.5
0
VR, REVERSE VOLTAGE (VOLTS)
3.0
1.0
0.5
0
C
T
, CAP
ACIT
ANCE
(pF)
5.0
10
15
40
I F
, FOR
W
ARD
CURRENT
(mA)
Figure 1. Typical Forward Voltage
Figure 2. Reverse Current versus Reverse
Voltage
Figure 3. Typical Capacitance
40
C
25
C
TA = 150
C
25
C
I R
, REVERSE CURRENT
(
A)
0.8
55
C
1 25
C
150
C
100
25
20
1.5
2.0
2.5
0.6
0.7
125
C
85
C
30
35
BAS4006LT1
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3
INFORMATION FOR USING THE SOT23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT23 POWER DISSIPATION
The power dissipation of the SOT23 is a function of
the drain pad size. This can vary from the minimum pad
size for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device
is determined by TJ(max), the maximum rated junction
temperature of the die, R
JA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT23 package, PD can be calculated as
follows:
PD =
TJ(max) TA
R
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25
C,
one can calculate the power dissipation of the device
which in this case is 225 milliwatts.
PD =
150
C 25
C
556
C/W
= 225 milliwatts
The 556
C/W for the SOT23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225
milliwatts. There are other alternatives to achieving
higher power dissipation from the SOT23 package.
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad
TM
. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the
same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure.
Therefore, the following items should always be observed
in order to minimize the thermal stress to which the
devices are subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
C or less.*
When preheating and soldering, the temperature of
the leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10
C.
The soldering temperature and time shall not exceed
260
C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5
C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
BAS4006LT1
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT23 (TO236AB)
PLASTIC PACKAGE
CASE 31808
ISSUE AF
D
J
K
L
A
C
B S
H
G
V
3
1
2
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102
0.1197
2.80
3.04
INCHES
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
NOTES:
1.
DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2.
CONTROLLING DIMENSION: INCH.
3.
MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
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BAS4006LT1/D
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