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Электронный компонент: BAS70LT1G

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Semiconductor Components Industries, LLC, 2004
July, 2004 - Rev. 4
1
Publication Order Number:
BAS70LT1/D
BAS70LT1
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Pb-Free Package is Available
Extremely Fast Switching Speed
Low Forward Voltage
MAXIMUM RATINGS
(T
J
= 150
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
70
V
Forward Power Dissipation
@ T
A
= 25
C
Derate above 25
C
P
F
225
1.8
mW
mW/
C
Operating Junction and Storage
Temperature Range
T
J,
T
stg
- 55 to +150
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
SOT-23
CASE 318
STYLE 8
http://onsemi.com
BE
Specific Device Code
M
= Date Code
MARKING DIAGRAM
1
2
3
Device
Package
Shipping
ORDERING INFORMATION
BAS70LT1
SOT-23
3000 / Tape & Reel
BAS70LT1G
SOT-23
(Pb-Free)
3000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BE M
3
CATHODE
1
ANODE
70 VOLTS SCHOTTKY
BARRIER DIODES
BAS70LT1
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2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage - (I
R
= 10
m
A)
V
(BR)R
70
-
V
Total Capacitance - (V
R
= 0 V, f = 1.0 MHz)
C
T
-
2.0
pF
Reverse Leakage
(V
R
= 50 V)
(V
R
= 70 V)
I
R
-
-
0.1
10
m
Adc
Forward Voltage - (I
F
= 1.0 mAdc)
V
F
-
410
mVdc
Forward Voltage - (I
F
= 10 mAdc)
V
F
-
750
mVdc
Forward Voltage - (I
F
= 15 mAdc)
V
F
-
1.0
Vdc
100
0
0.1
V
F
, FORWARD VOLTAGE (VOLTS)
0.2
0.3
0.4
0.5
10
1.0
0.1
85
C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5.0
10
15
20
50
1.4
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.2
0.4
0.2
0
C T
, CAP
ACIT
ANCE (pF)
5.0
10
15
50
I F
, FOR
W
ARD CURRENT
(mA)
Figure 1. Typical Forward Voltage
Figure 2. Reverse Current versus Reverse
Voltage
Figure 3. Typical Capacitance
-40
C
25
C
T
A
= 150
C
25
C
I R
, REVERSE CURRENT
(
A)
1.0
-55
C
125
C
150
C
100
25
20
0.6
0.8
1.0
0.6
0.7
125
C
85
C
30
35
40
45
25
30
35
40
45
0.8
0.9
BAS70LT1
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3
PACKAGE DIMENSIONS
SOT-23 (TO-236)
CASE 318-08
ISSUE AH
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
D
J
K
L
A
C
B S
H
G
V
3
1
2
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102
0.1197
2.80
3.04
INCHES
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318-03 AND -07 OBSOLETE, NEW
STANDARD 318-08.
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
BAS70LT1
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4
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BAS70LT1/D
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