Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
BC337
BC338
Unit
CollectorEmitter Voltage
VCEO
45
25
Vdc
CollectorBase Voltage
VCBO
50
30
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
Collector Current Continuous
IC
800
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watt
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 10 mA, IB = 0)
BC337
BC338
V(BR)CEO
45
25
Vdc
CollectorEmitter Breakdown Voltage
(IC = 100
A, IE = 0)
BC337
BC338
V(BR)CES
50
30
Vdc
EmitterBase Breakdown Voltage
(IE = 10
m
A, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 30 V, IE = 0)
BC337
(VCB = 20 V, IE = 0)
BC338
ICBO
100
100
nAdc
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
BC337
(VCE = 25 V, VBE = 0)
BC338
ICES
100
100
nAdc
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
IEBO
100
nAdc
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
October, 2001 Rev. 2
1
Publication Order Number:
BC337/D
BC337,
BC337-16,
BC337-25,
BC337-40,
BC338-25
CASE 2904, STYLE 17
TO92 (TO226AA)
1
2
3
COLLECTOR
1
2
BASE
3
EMITTER
BC337, BC33716, BC33725, BC33740, BC33825
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
BC337
BC33716
BC33725/BC33825
BC33740
(IC = 300 mA, VCE = 1.0 V)
hFE
100
100
160
250
60
630
250
400
630
BaseEmitter On Voltage
(IC = 300 mA, VCE = 1.0 V)
VBE(on)
1.2
Vdc
CollectorEmitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat)
0.7
Vdc
SMALLSIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Cob
15
pF
CurrentGain Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
210
MHz
Figure 1. Thermal Response
t, TIME (SECONDS)
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
r(t)
, NORMALIZED EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
JC
(t) = (t)
JC
JC
= 100
C/W MAX
JA
(t) = r(t)
JA
JA
= 375
C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
JC
(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
SINGLE PULSE
BC337, BC33716, BC33725, BC33740, BC33825
http://onsemi.com
3
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
1.0 s
TJ = 135
C
TA = 25
C
TC = 25
C
dc
dc
(APPLIES BELOW RATED VCEO)
1000
10
100
1.0
3.0
10
30
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Active Region Safe Operating Area
IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN
100
1000
10
1000
0.1
10
100
100
1.0
TJ = 135
C
100
s
VCE = 1 V
TJ = 25
C
IB, BASE CURRENT (mA)
Figure 4. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 5. "On" Voltages
100
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Temperature Coefficients
+1
IC, COLLECTOR CURRENT (mA)
Figure 7. Capacitances
0.1
1
1
10
100
1000
-2
-1
0
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS
)
V
,
VOL
T
AGE (VOL
TS)
V,
TEMPERA
TURE COEFFICIENTS (mV/
C)
C, CAP
ACIT
ANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
10
100
1
1.0
0.8
0.6
0.4
0.2
0
1
10
1000
100
10
100
TJ = 25
C
IC = 10 mA
TA = 25
C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1 V
VCE(sat) @ IC/IB = 10
VC for VCE(sat)
VB for VBE
Cob
Cib
100 mA 300 mA
500 mA
BC337, BC33716, BC33725, BC33740, BC33825
http://onsemi.com
4
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
CASE 02904
(TO226AA)
ISSUE AD
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
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including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
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