1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Darlington Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCES
30
Vdc
Collector Base Voltage
VCB
40
Vdc
Emitter Base Voltage
VEB
10
Vdc
Collector Current -- Continuous
IC
1.0
Adc
Total Power Dissipation @ TA = 25
C
Derate above 25
C
PD
625
12
mW
mW/
C
Total Power Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 2.0 mAdc, VBE = 0)
V(BR)CES
30
--
--
Vdc
Collector Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
V(BR)CBO
40
--
--
Vdc
Emitter Base Breakdown Voltage
(IE = 100 nAdc, IC = 0)
V(BR)EBO
10
--
--
Vdc
Collector Cutoff Current
(VCE = 30 Vdc)
ICES
--
--
500
nAdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
--
--
100
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
--
--
100
nAdc
Order this document
by BC517/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC517
CASE 2904, STYLE 17
TO92 (TO226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR 1
BASE
2
EMITTER 3
BC517
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 20 mAdc, VCE = 2.0 Vdc)
hFE
30,000
--
--
--
Collector Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat)
--
--
1.0
Vdc
Base Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)
VBE(on)
--
--
1.4
Vdc
SMALL SIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product(2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
--
200
--
MHz
1. Pulse Test: Pulse Width
v
2.0%.
2. fT = |hfe|
ftest
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
BC517
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25
C)
Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
RS, SOURCE RESISTANCE (k
)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (k
)
5.0
50
70
100
200
30
10
20
1.0
10
10
20
50 100 200
500
1 k 2 k
5 k 10 k 20 k
50 k 100 k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS
0
IC = 1.0 mA
100
A
10
A
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100
A
10
A
e
n
, NOISE VOL
T
AGE
(nV)
i n
, NOISE CURRENT
(pA)
2.0
5.0
10
20
50
100
200
500
100
0
BANDWIDTH = 10 Hz TO 15.7 kHz
IC = 10
A
100
A
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0
2.0
5.0
10
20
50
100
200
500
100
0
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10
A
100
A
IC = 1.0 mA
V
T
,
T
O
T
A
L
WIDEBAND NOISE VOL
T
AGE (nV)
NF
, NOISE FIGURE (dB)
10
20
50 100 200
500
1 k 2 k
5 k 10 k 20 k
50 k 100 k
BC517
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
SMALLSIGNAL CHARACTERISTICS
Figure 6. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
5.0
7.0
10
20
3.0
Figure 7. High Frequency Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
IB, BASE CURRENT (
A)
2.0
200 k
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
TJ = 25
C
C, CAP
ACIT
ANCE
(pF)
1.5
2.0
2.5
3.0
1.0
0.5
|h
fe
|, SMALLSIGNAL
CURRENT
GAIN
h
FE
, DC CURRENT
GAIN
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
Cibo
Cobo
0.5
1.0
2.0
0.5
10
20
50
100 200
500
VCE = 5.0 V
f = 100 MHz
TJ = 25
C
100 k
70 k
50 k
30 k
20 k
10 k
7.0 k
5.0 k
3.0 k
2.0 k
7.0
10
20
30
50 70
100
200 300
500
TJ = 125
C
25
C
55
C
VCE = 5.0 V
0.1 0.2
0.5 1.0 2.0
5.0
10
20
50
100 200
500 1000
TJ = 25
C
IC = 10 mA
50 mA
250 mA
500 mA
Figure 10. "On" Voltages
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
1.6
5.0
1.0
V
,
VOL
T
AGE
(VOL
TS)
1.4
1.2
1.0
0.8
0.6
7.0
10
20
30
50 70 100 200 300
500
VBE(sat) @ IC/IB = 1000
R
V
, TEMPERA
TURE COEFFICIENTS (mV/
C)
TJ = 25
C
VBE(on) @ VCE = 5.0 V
VCE(sat) @ IC/IB = 1000
2.0
3.0
4.0
5.0
6.0
5.0 7.0 10
20
30
50
70 100
200 300
500
25
C TO 125
C
55
C TO 25
C
*R
q
VC FOR VCE(sat)
q
VB FOR VBE
25
C TO 125
C
55
C TO 25
C
*APPLIES FOR IC/IB
hFE/3.0
BC517
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 12. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT
THERMAL
2.0
5.0
1.0
0.5
0.2
0.1
RESIST
ANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20
50
10
200
500
100
1.0 k
2.0 k
5.0 k
10 k
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
1.0 k
0.4
700
500
300
200
100
70
50
30
20
10
0.6
1.0
2.0
4.0
6.0
10
20
40
I C
, COLLECT
OR
CURRENT
(mA)
TA = 25
C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
Z
JC(t) = r(t)
R
JC
TJ(pk) TC = P(pk) Z
JC(t)
Z
JA(t) = r(t)
R
JA
TJ(pk) TA = P(pk) Z
JA(t)
1.0 ms
100
s
TC = 25
C
1.0 s
Design Note: Use of Transient Thermal Resistance Data
FIGURE A
tP
PP
PP
t1
1/f
DUTY CYCLE
+
t1 f
+
t1
tP
PEAK PULSE POWER = PP
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