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Электронный компонент: BC859CLT3

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Semiconductor Components Industries, LLC, 2004
June, 2004 - Rev. 8
Publication Order Number:
BC856ALT1/D
1
BC856ALT1 Series
Preferred Devices
General Purpose
Transistors
PNP Silicon
Features
Pb-Free Packages are Available
MAXIMUM RATINGS
(T
A
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BC856
BC857
BC858, BC859
V
CEO
-65
-45
-30
V
Collector-Base Voltage
BC856
BC857
BC858, BC859
V
CBO
-80
-50
-30
V
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current - Continuous
I
C
-100
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR- 5 Board,
(Note 1) T
A
= 25
C
Derate above 25
C
P
D
225
1.8
mW
mW/
C
Thermal Resistance,
Junction-to-Ambient
R
q
JA
556
C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25
C
Derate above 25
C
P
D
300
2.4
mW
mW/
C
Thermal Resistance,
Junction-to-Ambient
R
q
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
- 55 to
+150
C
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
SOT-23
CASE 318
STYLE 6
MARKING DIAGRAM
xx = Device Code
M = Date Code
1
2
3
1
2
3
xxM
Preferred devices are recommended choices for future use
and best overall value.
COLLECTOR
3
1
BASE
2
EMITTER
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See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
BC856ALT1 Series
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2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
BC856 Series
(I
C
= -10 mA)
BC857 Series
BC858, BC859 Series
V
(BR)CEO
-65
-45
-30
-
-
-
-
-
-
V
Collector - Emitter Breakdown Voltage
BC856 Series
(I
C
= -10
m
A, V
EB
= 0)
BC857A, BC857B Only
BC858, BC859 Series
V
(BR)CES
-80
-50
-30
-
-
-
-
-
-
V
Collector - Base Breakdown Voltage
BC856 Series
(I
C
= -10
m
A)
BC857 Series
BC858, BC859 Series
V
(BR)CBO
-80
-50
-30
-
-
-
-
-
-
V
Emitter - Base Breakdown Voltage
BC856 Series
(I
E
= -1.0
m
A)
BC857 Series
BC858, BC859 Series
V
(BR)EBO
-5.0
-5.0
-5.0
-
-
-
-
-
-
V
Collector Cutoff Current (V
CB
= -30 V)
Collector Cutoff Current
(V
CB
= -30 V, T
A
= 150
C)
I
CBO
-
-
-
-
-15
-4.0
nA
m
A
ON CHARACTERISTICS
DC Current Gain
BC856A, BC857A, BC858A
(I
C
= -10
m
A, V
CE
= -5.0 V)
BC856B, BC857B, BC858B
BC857C, BC858C
(I
C
= -2.0 mA, V
CE
= -5.0 V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
h
FE
-
-
-
125
220
420
90
150
270
180
290
520
-
-
-
250
475
800
-
Collector - Emitter Saturation Voltage
(I
C
= -10 mA, I
B
= -0.5 mA)
(I
C
= -100 mA, I
B
= -5.0 mA)
V
CE(sat)
-
-
-
-
-0.3
-0.65
V
Base - Emitter Saturation Voltage
(I
C
= -10 mA, I
B
= -0.5 mA)
(I
C
= -100 mA, I
B
= -5.0 mA)
V
BE(sat)
-
-
-0.7
-0.9
-
-
V
Base - Emitter On Voltage
(I
C
= -2.0 mA, V
CE
= -5.0 V)
(I
C
= -10 mA, V
CE
= -5.0 V)
V
BE(on)
-0.6
-
-
-
-0.75
-0.82
V
SMALL-SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product
(I
C
= -10 mA, V
CE
= -5.0 Vdc, f = 100 MHz)
f
T
100
-
-
MHz
Output Capacitance
(V
CB
= -10 V, f = 1.0 MHz)
C
ob
-
-
4.5
pF
Noise Figure
(I
C
= -0.2 mA, V
CE
= -5.0 Vdc, R
S
= 2.0 k
W
, f = 1.0 kHz, BW = 200 Hz)
BC856, BC857, BC858 Series
BC859 Series
NF
-
-
-
-
10
4.0
dB
BC856ALT1 Series
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3
BC857/BC858/BC859
Figure 1. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. "Saturation" and "On" Voltages
I
C
, COLLECTOR CURRENT (mAdc)
-0.2
0.2
Figure 3. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 4. Base-Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
-0.6
-0.7
-0.8
-0.9
-1.0
-0.5
0
-0.2
-0.4
-0.1
-0.3
1.6
1.2
2.0
2.8
2.4
-1.2
-1.6
-2.0
-0.02
-1.0
-10
0
-20
-0.1
-0.4
-0.8
h FE
, NORMALIZED DC CURRENT
GAIN
V
,
VOL
T
AGE (VOL
TS)
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (V)
VB
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
1.5
1.0
0.7
0.5
0.3
-0.2
-10
-100
-1.0
T
A
= 25
C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= -10 V
V
CE
= -10 V
T
A
= 25
C
-55
C to +125
C
I
C
= -100 mA
I
C
= -20 mA
-0.5 -1.0 -2.0
-5.0 -10
-20
-50 -100 -200
-0.1 -0.2
-0.5 -1.0 -2.0
-5.0
-10 -20
-50 -100
I
C
= -200 mA
I
C
= -50 mA
I
C
=
-10 mA
Figure 5. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
10
Figure 6. Current-Gain - Bandwidth Product
I
C
, COLLECTOR CURRENT (mAdc)
-0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
-0.5
C, CAP
ACIT
ANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
(MHz)
T
T
A
= 25
C
C
ob
C
ib
-0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
150
-1.0
-2.0 -3.0
-5.0
-10
-20 -30
-50
V
CE
= -10 V
T
A
= 25
C
T
A
= 25
C
1.0
BC856ALT1 Series
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4
BC856
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 8. "On" Voltage
I
C
, COLLECTOR CURRENT (mA)
-0.8
-1.0
-0.6
-0.2
-0.4
1.0
2.0
-0.1
-1.0
-10
-200
-0.2
0.2
0.5
-0.2
-1.0
-10
-200
T
J
= 25
C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= -5.0 V
Figure 9. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 10. Base-Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
-1.0
-1.2
-1.6
-2.0
-0.02
-1.0
-10
0
-20
-0.1
-0.4
-0.8
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
VB
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
-0.2
-2.0
-10
-200
-1.0
T
J
= 25
C
I
C
=
-10 mA
h FE
, DC CURRENT
GAIN (NORMALIZED)
V
,
VOL
T
AGE (VOL
TS)
V
CE
= -5.0 V
T
A
= 25
C
0
-0.5
-2.0
-5.0
-20
-50 -100
-0.05
-0.2
-0.5
-2.0
-5.0
-100 mA
-20 mA
-1.4
-1.8
-2.2
-2.6
-3.0
-0.5
-5.0
-20
-50 -100
-55
C to 125
C
q
VB
for V
BE
-2.0 -5.0
-20
-50 -100
Figure 11. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current-Gain - Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
-0.1 -0.2
-1.0
-50
2.0
-2.0
-10
-100
100
200
500
50
20
20
10
6.0
4.0
-1.0
-10
-100
V
CE
= -5.0 V
C, CAP
ACIT
ANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT T
-0.5
-5.0
-20
T
J
= 25
C
C
ob
C
ib
8.0
-50 mA
-200 mA
BC856ALT1 Series
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5
Figure 13. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT
THERMAL
2.0
5.0
1.0
0.5
0.2
0.1
RESIST
ANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20
50
10
200
500
100
1.0 k
2.0 k
5.0 k 10 k
Figure 14. Active Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
-200
-1.0
I C
, COLLECT
OR CURRENT
(mA)
T
A
= 25
C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
T
J
= 25
C
Z
qJC
(t) = r(t) R
qJC
R
qJC
= 83.3
C/W MAX
Z
qJA
(t) = r(t) R
qJA
R
qJA
= 200
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
qJC
(t)
t
1
t
2
P
(pk)
DUTY CYCLE, D = t
1
/t
2
-100
-50
-10
-5.0
-2.0
-5.0
-10
-30 -45 -65 -100
1 s
BC558, BC559
BC557
BC556
The safe operating area curves indicate I
C
-V
CE
limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150
C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk)
150
C. T
J(pk)
may be calculated from the data in Figure 13. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary breakdown.
BC856ALT1 Series
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6
ORDERING INFORMATION
Device
Marking
Package
Shipping
BC856ALT1
3A
SOT-23
3,000 / Tape & Reel
BC856ALT3
3A
SOT-23
10,000 / Tape & Reel
BC856BLT1
3B
SOT-23
BC856BLT1G
3B
SOT-23
(Pb-Free)
3,000 / Tape & Reel
BC856BLT3
3B
SOT-23
10,000 / Tape & Reel
BC857ALT1
3E
SOT-23
3,000 / Tape & Reel
BC857BLT1
3F
SOT-23
3,000 / Tape & Reel
BC857BLT3
3F
SOT-23
BC857BLT3G
3F
SOT-23
(Pb-Free)
10,000 / Tape & Reel
BC857CLT1
3G
SOT-23
3,000 / Tape & Reel
BC857CLT1G
3G
SOT-23
(Pb-Free)
3,000 / Tape & Reel
BC858ALT1
3J
SOT-23
BC858ALT1G
3J
SOT-23
(Pb-Free)
3,000 / Tape & Reel
BC858BLT1
3K
SOT-23
BC858BLT1G
3K
SOT-23
(Pb-Free)
3,000 / Tape & Reel
BC858BLT3
3L
SOT-23
10,000 / Tape & Reel
BC858CLT1
3L
SOT-23
BC858CLT1G
3L
SOT-23
(Pb-Free)
3,000 / Tape & Reel
BC858CLT3
3L
SOT-23
BC858CLT3G
3L
SOT-23
(Pb-Free)
10,000 / Tape & Reel
BC859BLT1
4B
SOT-23
3,000 / Tape & Reel
BC859BLT3
4B
SOT-23
10,000 / Tape & Reel
BC859CLT1
4C
SOT-23
3,000 / Tape & Reel
BC859CLT3
4C
SOT-23
10,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
BC856ALT1 Series
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7
PACKAGE DIMENSIONS
SOT-23 (TO-236)
CASE 318-09
ISSUE AI
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102
0.1197
2.80
3.04
INCHES
B
0.0472
0.0551
1.20
1.40
C
0.0385
0.0498
0.99
1.26
D
0.0140
0.0200
0.36
0.50
G
0.0670
0.0826
1.70
2.10
H
0.0040
0.0098
0.10
0.25
J
0.0034
0.0070
0.085
0.177
K
0.0180
0.0236
0.45
0.60
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.0984
2.10
2.50
V
0.0177
0.0236
0.45
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318-01, -02, AND -06 OBSOLETE, NEW STANDARD 318-09.
1
3
2
A
L
B
S
V
G
D
H
C
K
J
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
BC856ALT1 Series
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8
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
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Phone: 81-3-5773-3850
BC856ALT1/D
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For additional information, please contact your
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