Semiconductor Components Industries, LLC, 2002
May, 2002 Rev. 1
1
Publication Order Number:
BCX71J/D
BCX71J
General Purpose Transistor
PNP Silicon
Moisture Sensitivity Level: 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
45
Vdc
Collector-Base Voltage
V
CBO
45
Vdc
Emitter-Base Voltage
V
EBO
5.0
Vdc
Collector Current Continuous
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 1.)
T
A
= 25
C
Derate above 25
C
P
D
350
2.8
mW
mW/
C
Storage Temperature
T
stg
150
C
Thermal Resistance
Junction-to-Ambient (Note 1.)
R
q
JA
357
C/W
1. Package mounted on 99.5% alumina 10 X 8 X 0.6 mm.
SOT23
CASE 318
STYLE 6
BJ
= Specific Device Marking
M
= Date Code
BJ M
MARKING DIAGRAM
1
3
2
Device
Package
Shipping
ORDERING INFORMATION
BCX71JLT1
SOT23
3000/Tape & Reel
COLLECTOR
3
1
BASE
2
EMITTER
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BCX71J
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2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
V
(BR)CEO
45
Vdc
CollectorBase Breakdown Voltage
(I
E
= 1.0
m
Adc, I
E
= 0)
V
(BR)EBO
5.0
Vdc
Collector Cutoff Current
(V
CE
= 32 Vdc)
(V
CE
= 32 Vdc, T
A
= 150
C)
I
CES
20
20
nAdc
m
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
m
Adc, V
CE
= 5.0 Vdc)
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz)
h
FE
40
250
100
250
460
500
CollectorEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 0.25 mAdc)
(I
C
= 50 mAdc, I
B
= 1.25 mAdc)
V
CE(sat)
0.25
0.55
Vdc
BaseEmitter Saturation Voltage
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
V
BE(sat)
0.6
0.68
0.85
1.05
Vdc
BaseEmitter On Voltage
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
V
BE(on)
0.6
0.75
Vdc
Output Capacitance
(V
CE
= 10 Vdc, I
C
= 0, f = 1.0 MHz)
C
obo
6.0
pF
Noise Figure
(I
C
= 0.2 mAdc, V
CE
= 5.0 Vdc, R
S
= 2.0 k
W
, f = 1.0 kHz, BW = 200 Hz)
NF
6.0
dB
SWITCHING CHARACTERISTICS
TurnOn Time
(I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
t
on
150
ns
TurnOff Time
(I
B2
= 1.0 mAdc, V
BB
= 3.6 Vdc, R1 = R2 = 5.0 k
W
, R
L
= 990
W
)
t
off
800
ns
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25
C)
Figure 1. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
3.0
Figure 2. Noise Current
f, FREQUENCY (Hz)
1.0
10
20
50 100
200
500
1.0 k 2.0 k
5.0 k 10 k
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.1
I
C
= 10
m
A
100 mA
e n
, NOISE VOL
T
AGE (nV)
I n
, NOISE CURRENT
(pA)
30 mA
BANDWIDTH = 1.0 Hz
R
S
I
C
= 1.0 mA
300 mA
100 mA
30 mA
10 mA
10
20
50
100 200
500
1.0 k 2.0 k
5.0 k 10 k
2.0 1.0 mA
0.2
300 mA
BANDWIDTH = 1.0 Hz
R
S
0
BCX71J
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3
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25
C)
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
Figure 3. Narrow Band, 100 Hz
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Narrow Band, 1.0 kHz
I
C
, COLLECTOR CURRENT (mA)
10
0.5 dB
BANDWIDTH = 1.0 Hz
R S
, SOURCE RESIST
ANCE (OHMS)
R S
, SOURCE RESIST
ANCE (OHMS)
Figure 5. Wideband
I
C
, COLLECTOR CURRENT (mA)
10
10 Hz to 15.7 kHz
R S
, SOURCE RESIST
ANCE (OHMS)
Noise Figure is Defined as:
NF
+
20 log10
en2
)
4KTRS
)
In
2RS2
4KTRS
1 2
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman's Constant (1.38 x 10
23
j/
K)
= Temperature of the Source Resistance (
K)
= Source Resistance (Ohms)
e
n
I
n
K
T
R
S
1.0 dB
2.0 dB
3.0 dB
20 30
50 70 100
200 300
500 700 1.0 k
10
20 30
50 70 100
200 300
500 700 1.0 k
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
20 30
50 70 100
200 300
500 700 1.0 k
BANDWIDTH = 1.0 Hz
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
BCX71J
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4
TYPICAL STATIC CHARACTERISTICS
Figure 6. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
400
0.003
h , DC CURRENT
GAIN
FE
T
J
= 125
C
-55
C
25
C
V
CE
= 1.0 V
V
CE
= 10 V
Figure 7. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
1.4
Figure 8. Collector Characteristics
I
C
, COLLECTOR CURRENT (mA)
V
,
VOL
T
AGE (VOL
TS)
1.0
2.0
5.0
10
20
50
1.6
100
T
J
= 25
C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1.0 V
*q
VC
for V
CE(sat)
q
VB
for V
BE
0.1
0.2
0.5
Figure 9. "On" Voltages
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
0.002
T
A
= 25
C
I
C
= 1.0 mA
10 mA
100 mA
Figure 10. Temperature Coefficients
50 mA
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
60
80
100
20
0
0
I C
, COLLECT
OR CURRENT
(mA)
T
A
= 25
C
PULSE WIDTH = 300 ms
DUTY CYCLE
2.0%
I
B
= 400 mA
350 mA
300 mA
250 mA
200 mA
*APPLIES for I
C
/I
B
h
FE
/2
25
C to 125
C
-55
C to 25
C
25
C to 125
C
-55
C to 25
C
40
60
0.005
0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
0.005 0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
5.0
10
15
20
25
30
35
40
1.2
1.0
0.8
0.6
0.4
0.2
0
2.4
0.8
0
1.6
0.8
1.0
2.0
5.0
10
20
50 100
0.1
0.2
0.5
200
100
80
V,
TEMPERA
TURE COEFFICIENTS (mV/
C)
150 mA
100 mA
50 mA
BCX71J
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5
TYPICAL DYNAMIC CHARACTERISTICS
C, CAP
ACIT
ANCE (pF)
Figure 11. TurnOn Time
I
C
, COLLECTOR CURRENT (mA)
500
Figure 12. TurnOff Time
I
C
, COLLECTOR CURRENT (mA)
2.0
5.0
10
20
30
50
1000
Figure 13. CurrentGain -- Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
Figure 14. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
3.0
1.0
500
0.5
10
t, TIME
(ns)
t, TIME
(ns)
f, CURRENT-GAIN BANDWIDTH PRODUCT
(MHz)
T
5.0
7.0
10
20
30
50
70
100
300
7.0
70 100
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25
C
t
d
@ V
BE(off)
= 0.5 V
t
r
10
20
30
50
70
100
200
300
500
700
-2.0
-1.0
V
CC
= -3.0 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25
C
t
s
t
f
50
70
100
200
300
0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
T
J
= 25
C
V
CE
= 20 V
5.0 V
1.0
2.0
3.0
5.0
7.0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
0.05
C
ib
C
ob
200
-3.0 -5.0 -7.0
-20
-10
-30
-50 -70 -100
T
J
= 25
C
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