Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 10
Publication Order Number:
BD676/D
BD676, BD676A, BD678,
BD678A, BD680, BD680A,
BD682
Plastic Medium-Power
Silicon PNP Darlingtons
...for use as output devices in complementary generalpurpose
amplifier applications.
High DC Current Gain
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
Monolithic Construction
BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with
BD675, 675A, 677, 677A, 679, 679A, 681
BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BD676, BD676A
BD678, BD678A
BD680, BD680A
BD682
VCEO
45
60
80
100
Vdc
Collector-Base Voltage
BD676, BD676A
BD678, BD678A
BD680, BD680A
BD682
VCB
45
60
80
100
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
0.1
Adc
Total Device Dissipation
@ TC = 25
C
Derate above 25
C
PD
40
0.32
W
W/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance
Junction to Case
R
JC
3.13
C/W
TO225AA
CASE 77
STYLE 1
MARKING DIAGRAM
Y
= Year
WW
= Work Week
BD6xxx = Specific Device Code
xxx
= 76, 76A, 78, 78A, 80, 80A or 82
Device
Package
Shipping
ORDERING INFORMATION
BD676
TO225AA
500 Units/Box
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLTS
40 WATTS
BD676A
TO225AA
500 Units/Box
BD678
TO225AA
500 Units/Box
BD678A
TO225AA
500 Units/Box
BD680
TO225AA
500 Units/Box
BD680A
TO225AA
500 Units/Box
BD682
TO225AA
500 Units/Box
YWW
BD6xxx
3
2 1
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
http://onsemi.com
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)
BD676, 676A
(IC = 50 mAdc, IB = 0)
BD678, 678A
BD680, 680A
BD682
BVCEO
45
60
80
100
Vdc
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
ICEO
500
Adc
Collector Cutoff Current
(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO. IE = 0, TC = 100
C)
ICBO
0.2
2.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
2.0
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
BD676, 678, 680, 682
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD676A, 678A, 680A
hFE
750
750
CollectorEmitter Saturation Voltage (Note 1)
(IC = 1.5 Adc, IB = 30 mAdc)
BD678, 680, 682
(IC = 2.0 Adc, IB = 40 mAdc)
BD676A, 678A, 680A
VCE(sat)
2.5
2.8
Vdc
BaseEmitter On Voltage (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
BD678, 680, 682
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD676A, 678A, 680A
VBE(on)
2.5
2.5
Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
hfe
1.0
1. Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
50
40
10
5.0
0
15
30
45
60
75
105
135 150 165
Figure 1. Power Temperature Derating
TC, CASE TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (W
A
TTS)
120
90
45
20
15
30
25
35
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682
http://onsemi.com
3
Figure 2. DC Safe Operating Area
5.0
1.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
1.0
0.5
0.05
2.0
5.0
10
50
100
BONDING WIRE LIMIT
THERMAL LIMIT at TC = 25
C
SECONDARY BREAKDOWN LIMIT
0.2
0.1
I C
, COLLECT
OR CURRENT
(AMP)
TC = 25
C
BD676, 676A
BD678, 678A
BD680, 680A
BD682
20
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
Figure 3. Darlington Circuit Schematic
BASE
PNP
BD676, 676A
BD678, 678A
BD680, 680A
BD682
COLLECTOR
EMITTER
[ 8.0 k
[ 120
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682
http://onsemi.com
4
PACKAGE DIMENSIONS
TO126
TO225AA
CASE 7709
ISSUE W
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B
A
M
K
F
C
Q
H
V
G
S
D
J
R
U
1
3
2
2 PL
M
A
M
0.25 (0.010)
B
M
M
A
M
0.25 (0.010)
B
M
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.425
0.435
10.80
11.04
B
0.295
0.305
7.50
7.74
C
0.095
0.105
2.42
2.66
D
0.020
0.026
0.51
0.66
F
0.115
0.130
2.93
3.30
G
0.094 BSC
2.39 BSC
H
0.050
0.095
1.27
2.41
J
0.015
0.025
0.39
0.63
K
0.575
0.655
14.61
16.63
M
5 TYP
5 TYP
Q
0.148
0.158
3.76
4.01
R
0.045
0.065
1.15
1.65
S
0.025
0.035
0.64
0.88
U
0.145
0.155
3.69
3.93
V
0.040
---
1.02
---
_
_
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be
validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
BD676/D
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
N. American Technical Support: 8002829855 Toll Free USA/Canada
PDF 
ZIP