Darlington Complementary
Silicon Power Transistors
. . . designed for general purpose and low speed switching
applications.
High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc.
Collector Emitter Sustaining Voltage @ 30 mAdc:
VCEO(sus) = 80 Vdc (min.) -- BDW46
100 Vdc (min.) -- BDW42/BDW47
Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc
3.0 Vdc (max.) @ IC = 10.0 Adc
Monolithic Construction with BuiltIn Base Emitter Shunt resistors
TO220AB Compact Package
MAXIMUM RATINGS
Rating
Symbol
BDW46
BDW42
BDW47
Unit
CollectorEmitter Voltage
VCEO
80
100
Vdc
CollectorBase Voltage
VCB
80
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
IC
15
Adc
Base Current
IB
0.5
Adc
Total Device Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
85
0.68
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.47
_
C/W
90
60
40
20
0
25
50
75
100
125
150
Figure 1. Power Temperature Derating Curve
TC, CASE TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (W
A
TTS)
80
70
50
30
10
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
)
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 10
1
Publication Order Number:
BDW42/D
BDW42
BDW46
BDW47
DARLINGTON
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80100 VOLTS
85 WATTS
*ON Semiconductor Preferred Device
CASE 221A09
TO220AB
*
*
NPN
PNP
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
4
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2
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
BDW46
BDW42/BDW47
VCEO(sus)
80
100
--
--
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
BDW46
(VCE = 50 Vdc, IB = 0)
BDW42/BDW47
ICEO
--
--
2.0
2.0
mAdc
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
BDW41/BDW46
(VCB = 100 Vdc, IE = 0)
BDW42/BDW47
ICBO
--
--
1.0
1.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
--
2.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
1000
250
--
--
CollectorEmitter Saturation Voltage
(IC = 5.0 Adc, IB = 10 mAdc)
(IC = 10 Adc, IB = 50 mAdc)
VCE(sat)
--
--
2.0
3.0
Vdc
BaseEmitter On Voltage
(IC = 10 Adc, VCE = 4.0 Vdc)
VBE(on)
--
3.0
Vdc
SECOND BREAKDOWN (2)
Second Breakdown Collector
Current with Base Forward Biased
BDW42
VCE = 28.4 Vdc
VCE = 40 Vdc
BDW46/BDW47
VCE = 22.5 Vdc
VCE = 36 Vdc
IS/b
3.0
1.2
3.8
1.2
--
--
--
--
Adc
DYNAMIC CHARACTERISTICS
Magnitude of common emitter small signal short circuit current transfer ratio
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
fT
4.0
--
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
BDW42
BDW46/BDW47
Cob
--
--
200
300
pF
SmallSignal Current Gain
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe
300
--
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle = 2.0%.
(2) Pulse Test non repetitive: Pulse Width = 250 ms.
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3
Figure 2. Switching Times Test Circuit
5.0
0.1
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
t, TIME
(s)
3.0
0.7
0.5
0.3
0.2
0.05
0.2 0.3
0.7
3.0
10
td @ VBE(off) = 0 V
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25
C
tf
0.07
1.0
5.0
ts
tr
0.1
1.0
2.0
0.5
2.0
7.0
0
VCC
- 30 V
SCOPE
TUT
+ 4.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1 MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25
s
D1
51
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V2
APPROX
+ 8.0 V
V1
APPROX
- 12 V
[ 8.0 k
[ 150
for td and tr, D1 id disconnected
and V2 = 0
For NPN test circuit reverse all polarities
RB
BDW42 BDW46 BDW47
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4
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
r(t) EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
R
JC(t) = r(t) R
JC
R
JC = 1.92
C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) R
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
0.03
0.3
3.0
30
300
ACTIVEREGION SAFE OPERATING AREA
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
@ TC = 25
C (SINGLE PULSE)
50
1.0
Figure 5. BDW42
20
2.0
0.05
10
20
100
TJ = 25
C
BDW42
1.0 ms
0.1 ms
0.2
5.0
0.5
I C
, COLLECT
OR CURRENT
(AMP)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
30
70
1.0
0.1
0.5 ms
dc
2.0
50
3.0
5.0 7.0
Figure 6. BDW46 and BDW47
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
@ TC = 25
C (SINGLE PULSE)
50
1.0
20
2.0
0.05
10
20
100
TJ = 25
C
BDW46
BDW47
1.0 ms
0.1 ms
0.2
5.0
0.5
I C
, COLLECT
OR CURRENT
(AMP)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
30
70
1.0
0.1
0.5 ms
dc
2.0
50
3.0
5.0 7.0
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE limits
of the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 5 and 6 is based on
TJ(pk) = 200_C; TC is variable depending on conditions.
Second breakdown pulse limits are valid for duty cycles to
10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from
the data in Figure 4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
*Linear extrapolation
BDW42 BDW46 BDW47
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5
10,000
1.0
Figure 7. SmallSignal Current Gain
f, FREQUENCY (kHz)
10
2.0
5.0
10
20
50 100 200
1000
500
300
100
5000
h FE
, SMALL-SIGNAL
CURRENT
GAIN
20
3000
200
500
2000
1000
30
50
BDW46, 47 (PNP)
BDW42 (NPN)
TJ = 25
C
VCE = 3.0 V
IC = 3.0 A
300
0.1
Figure 8. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30
1.0 2.0
5.0
20
100
10
C, CAP
ACIT
ANCE (pF)
200
100
70
50
TJ = + 25
C
Cib
Cob
50
0.2
0.5
BDW46, 47 (PNP)
BDW42 (NPN)
0.1
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
0.5 0.7 1.0
2.0
10
500
300
h FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
-55
C
VCE = 3.0 V
200
7.0
BDW40, 41, 42 (NPN)
BDW45, 46, 47 (PNP)
20,000
5000
10,000
3000
2000
1000
3.0
5.0
0.1
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
0.5 0.7 1.0
2.0
10
500
300
h FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
-55
C
VCE = 3.0 V
200
7.0
20,000
5000
10,000
3000
2000
1000
3.0
5.0
7000
700
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
Figure 10. Collector Saturation Region
3.0
IB, BASE CURRENT (mA)
0.3
0.5
1.0
2.0 3.0
5.0 7.0
30
2.6
2.2
1.8
1.4
IC = 2.0 A
TJ = 25
C
4.0 A
6.0 A
1.0
0.7
20
10
3.0
IB, BASE CURRENT (mA)
0.3
0.5
1.0
2.0 3.0
5.0 7.0
30
2.6
2.2
1.8
1.4
IC = 2.0 A
TJ = 25
C
4.0 A
6.0 A
1.0
0.7
20
10
BDW42 BDW46 BDW47
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6
IC, COLLECTOR CURRENT (AMP)
VBE(sat) @ IC/IB = 250
V
,
VOL
T
AGE (VOL
TS)
Figure 11. "On" Voltages
IC, COLLECTOR CURRENT (AMP)
V
,
VOL
T
AGE (VOL
TS)
VBE(sat) @ IC/IB = 250
BDW40, 41, 42 (NPN)
BDW45, 46, 47 (PNP)
VCE(sat) @ IC/IB = 250
TJ = 25
C
VBE @ VCE = 4.0 V
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 250
TJ = 25
C
0.1
0.2 0.3
0.5 0.7 1.0
2.0
10
7.0
3.0
5.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0
10
7.0
3.0
5.0
3.0
2.5
2.0
1.5
1.0
0.5
3.0
2.5
2.0
1.5
1.0
0.5
V,
TEMPERA
TURE COEFFICIENT
(mV/
C)
+5.0
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
0.1
0.2 0.3
1.0
2.0 3.0
5.0 7.0 10
-55
C to 25
C
+4.0
+3.0
+1.0
0
-4.0
-1.0
-2.0
-3.0
-5.0
VB for VBE
*
VC for VCE(sat)
-55
C to 25
C
25
C to 150
C
25
C to 150
C
*IC/IB v 250
0.5 0.7
+5.0
IC, COLLECTOR CURRENT (AMP)
0.1
0.2 0.3
1.0
2.0 3.0
5.0
10
-55
C to +25
C
V,
TEMPERA
TURE COEFFICIENTS (mV/
C)
+4.0
+3.0
+1.0
0
-4.0
-1.0
-2.0
-3.0
-5.0
VB for VBE
*
VC for VCE(sat)
-55
C to +25
C
+25
C to 150
C
+25
C to 150
C
*IC/IB v 250
0.5
+2.0
+2.0
105
Figure 13. Collector CutOff Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
102
101
100
, COLLECT
OR CURRENT
(A)
I C
10-1
-0.2 -0.4
0
+0.2
+0.4
+0.6
VCE = 30 V
TJ = 150
C
100
C
25
C
REVERSE
FORWARD
103
104
-0.6 -0.8 -1.0 -1.2 -1.4
105
VBE, BASE-EMITTER VOLTAGE (VOLTS)
102
101
100
, COLLECT
OR CURRENT
(A)
I C
10-1
+0.2 +0.4
0
-0.2
-0.4
-0.6
VCE = 30 V
REVERSE
FORWARD
103
104
+0.6 +0.8 +1.0 +1.2 + 1.4
TJ = 150
C
100
C
25
C
BDW42 BDW46 BDW47
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7
Figure 14. Darlington Schematic
NPN
BDW42
PNP
BDW46
BDW47
BASE
COLLECTOR
EMITTER
[ 8.0 k
[ 60
BASE
COLLECTOR
EMITTER
[ 8.0 k
[ 60
BDW42 BDW46 BDW47
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8
PACKAGE DIMENSIONS
CASE 221A09
ISSUE AB
TO220AB
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
---
1.15
---
Z
---
0.080
---
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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BDW42/D
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