Semiconductor Components Industries, LLC, 2000
May, 2000 Rev. 3
1
Publication Order Number:
C106/D
C106 Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light, and speed control; process and
remote control, and warning systems where reliability of operation is
important.
Glassivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
High Heat Dissipation and Durability
Sensitive Gate Triggering
Device Marking: Device Type, e.g., C106B, Date Code
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage(1)
(Sine Wave, 5060 Hz, RGK = 1 k
,
TC = 40
to 110
C)
C106B
C106D, C106D1
C106M, C106M1
VDRM,
VRRM
200
400
600
Volts
On-State RMS Current
(180
Conduction Angles, TC = 80
C)
IT(RMS)
4.0
Amps
Average OnState Current
(180
Conduction Angles, TC = 80
C)
IT(AV)
2.55
Amps
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = +110
C)
ITSM
20
Amps
Circuit Fusing Considerations (t = 8.3 ms)
I2t
1.65
A2s
Forward Peak Gate Power
(Pulse Width
v
1.0
sec, TC = 80
C)
PGM
0.5
Watt
Forward Average Gate Power
(Pulse Width
v
1.0
sec, TC = 80
C)
PG(AV)
0.1
Watt
Forward Peak Gate Current
(Pulse Width
v
1.0
sec, TC = 80
C)
IGM
0.2
Amp
Operating Junction Temperature Range
TJ
40 to
+110
C
Storage Temperature Range
Tstg
40 to
+150
C
Mounting Torque(2)
--
6.0
in. lb.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of compression washer (B52200F006).
Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink
thermal resistance. Anode lead and heatsink contact pad are common.
SCRs
4 AMPERES RMS
200 thru 600 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
C106B
TO225AA
500/Box
C106D
TO225AA
http://onsemi.com
500/Box
K
G
A
TO225AA
(formerly TO126)
CASE 077
STYLE 2
1
2
3
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
Preferred devices are recommended choices for future use
and best overall value.
C106D1
TO225AA
500/Box
C106M
TO225AA
500/Box
C106M1
TO225AA
500/Box
C106 Series
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2
THERMAL CHARACTERISTICS
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
3.0
C/W
Thermal Resistance, Junction to Ambient
R
JA
75
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
TL
260
C
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1000 Ohms)
TJ = 25
C
TJ = 110
C
IDRM, IRRM
--
--
--
--
10
100
A
A
ON CHARACTERISTICS
Peak Forward OnState Voltage(1)
(IFM = 1 A Peak for C106B, D, & M)
(IFM = 4 A Peak for C106D1, & M1)
VTM
--
--
2.2
Volts
Gate Trigger Current (Continuous dc)(2)
(VAK = 6 Vdc, RL = 100 Ohms)
TJ = 25
C
TJ = 40
C
IGT
--
--
15
35
200
500
A
Peak Reverse Gate Voltage (IGR = 10
A)
VGRM
--
--
6.0
Volts
Gate Trigger Voltage (Continuous dc)(2)
(VAK = 6 Vdc, RL = 100 Ohms)
TJ = 25
C
TJ = 40
C
VGT
0.4
0.5
.60
.75
0.8
1.0
Volts
Gate NonTrigger Voltage (Continuous dc)(2)
(VAK = 12 V, RL = 100 Ohms, TJ = 110
C)
VGD
0.2
--
--
Volts
Latching Current
(VAK = 12 V, IG = 20 mA)
TJ = 25
C
TJ = 40
C
IL
--
--
.20
.35
5.0
7.0
mA
Holding Current (VD = 12 Vdc)
(Initiating Current = 20 mA, Gate Open)
TJ = 25
C
TJ = 40
C
TJ = +110
C
IH
--
--
--
.19
.33
.07
3.0
6.0
2.0
mA
DYNAMIC CHARACTERISTICS
Critical RateofRise of OffState Voltage
(VAK = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,
TJ = 110
C)
dv/dt
--
8.0
--
V/
s
(1) Pulse Test: Pulse Width
2.0 ms, Duty Cycle
2%.
(2) RGK is not included in measurement.
C106 Series
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3
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
IRRM at VRRM
(off state)
DC
DC
JUNCTION TEMPERATURE
110
C
100
10
20
30
40
70
110
90
3.6
80
0
.4
.8
1.6
1.2
2.0
2.4
3.2
60
4.0
IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD.
50 to 400 Hz
50
6
4
2
0
8
0
10
2.8
3.6
.4
.8
1.6
1.2
2.0
2.4
3.2
4.0
2.6
IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD
50 TO 400Hz.
C
T
, CASE
TEMPERA
TURE ( C)
P
,
A
VERAGE
ON-ST
A
TE
POWER
DISSIP
A
TION
(W
A
TTS)
(A
V)
Figure 1. Average Current Derating
Figure 2. Maximum OnState Power Dissipation
C106 Series
http://onsemi.com
4
1
100
95
40
25
10
20
5
35
50
80
10
110
TJ, JUNCTION TEMPERATURE (
C)
65
GT
m
I
Figure 3. Typical Gate Trigger Current versus
Junction Temperature
Figure 4. Typical Holding Current versus
Junction Temperature
0.9
0.2
0.3
0.4
0.7
1.0
0.8
95
45
25
10
20
5
35
50
80
0.6
110
TJ, JUNCTION TEMPERATURE (
C)
0.5
65
GT
V
Figure 5. Typical Gate Trigger Voltage versus
Junction Temperature
Figure 6. Typical Latching Current versus
Junction Temperature
, GA
TE
TRIGGER
CURRENT
(
A)
10
1000
95
40
25
10
20
5
35
50
80
100
110
TJ, JUNCTION TEMPERATURE (
C)
65
H
m
I
,
HOLDING
CURRENT
(
A)
10
1000
95
40
25
10
20
5
35
50
80
100
110
TJ, JUNCTION TEMPERATURE (
C)
65
L
m
I
, LA
TCHING
CURRENT
(
A)
, GA
TE
TRIGGER
VOL
T
AGE
(V)
C106 Series
http://onsemi.com
5
Package Interchangeability
The dimensional diagrams below compare the critical dimensions of the ON Semiconductor
C-106 package with competitive devices. It has been demonstrated that the smaller dimensions of
the ON Semiconductor package make it compatible in most lead-mount and chassis-mount
applications. The user is advised to compare all critical dimensions for mounting compatibility.
ON Semiconductor C-106 Package
Competitive C-106 Package
.315
____
.285
.105
____
.095
.054
____
.046
.420
____
.400
.400
____
.360
.385
____
.365
.135
____
.115
.520
____
.480
.127
____
.123
DIA
.105
____
.095
.190
____
.170
.026
____
.019
.025
____
.035
.295
____
.305
.148
____
.158
.115
____
.130
_
.015
____
.025
.050
____
.095
.145
____
.155
5 TYP
.425
____
.435
.575
____
.655
.020
____
.026
1 2 3
.045
____
.055
.095
____
.105
.040
.094 BSC
C106 Series
http://onsemi.com
6
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B
A
M
K
F
C
Q
H
V
G
S
D
J
R
U
1
3
2
2 PL
M
A
M
0.25 (0.010)
B
M
M
A
M
0.25 (0.010)
B
M
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.425
0.435
10.80
11.04
B
0.295
0.305
7.50
7.74
C
0.095
0.105
2.42
2.66
D
0.020
0.026
0.51
0.66
F
0.115
0.130
2.93
3.30
G
0.094 BSC
2.39 BSC
H
0.050
0.095
1.27
2.41
J
0.015
0.025
0.39
0.63
K
0.575
0.655
14.61
16.63
M
5 TYP
5 TYP
Q
0.148
0.158
3.76
4.01
R
0.045
0.065
1.15
1.65
S
0.025
0.035
0.64
0.88
U
0.145
0.155
3.69
3.93
V
0.040
1.02
_
_
TO225AA
(formerly TO126)
CASE 07709
ISSUE W
STYLE 2:
PIN 1.
CATHODE
2.
ANODE
3.
GATE
C106 Series
http://onsemi.com
7
Notes
C106 Series
http://onsemi.com
8
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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C106/D
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